[G-2-3] First Operation of AlGaN Channel High Electron Mobility Transistors with Sufficiently Low Resistive Source/Drain Contact formed by Si Ion Implantation

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita, Yuji Abe, Toshiyuki Oishi, Yasunori Tokuda, Yoshinobu Aoyagi (1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center, 2.RIKEN, Nanoscience Development and Support Team, 3.Tokyo Institute of Technology, Dept. of Electronics and Applied Physics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-2-4] Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500 ℃ Oxidized Ni/Au Gate

Young-Hwan Choi, Jiyong Lim, In-Hwan Ji, Kyu-Heon Cho, Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-2-5] Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO2 Passivation Layer

Jiyong Lim, Young-Hwan Choi, In-Hwan Ji, Kyu-Heon Cho, Jihye Lee, William Jo, Min-Koo Han (1.School of Electrical Eng. & Computer Science #50, Seoul National University, 2.Department of Physics, Ewha Womans University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-2-6] Enhanced DC Characteristics of Si delta-doped AlGaN/GaN HFETs with p-GaN Backbarrier

H. C. Lee, S. Y. Hyun, S. W. Yun, C. Ostermaier, W. Y. Lee, J. B. Ha, H. I. Cho, S. H. Hahm, C. K. Hahn, H. C. Choi, J. H. Lee (1.School of Electrical Engineering and Computer Science, Kyungpook National University, 2.Korea Electronics Technology Institute)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-3-1] Class-F Microwave Amplifier Design Using GaAs-HBT and GaN-HEMT

Kazuhiko Honjo, Ryo Ishikawa, Tsuyoshi Yoshida, Cong Zheng (1.The University of Electro-Communications)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-3-2] High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy

Hiroki Sugiyama, Toshihiko Kosugi, Haruki Yokoyama, Koichi Murata, Yasuro Yamane, Masami Tokumitsu, Takatomo Enoki (1.NTT Photonics Laboratories, 2.NTT Electronics Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-3-3] Low Power Consumption and Low Noise InGaP/GaAs HBT MMIC Amplifier for Full-Band UWB Receiver

Ryo Ishikawa, Tatsuya Abe, Masao Shimada, Kazuhiko Honjo (1.Advanced Wireless Communication Research Center (AWCC), The University of Electro-Communications, 2.NANOTECO Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-3-4] Ku-band Compact Multi-layer Monolithic Microwave Digital Attenuator using InP/InGaAs PIN Diodes

Hyunchul Eom, Jung Gil Yang, Sunkyu Choi, Kyounghoon Yang (1.Division of Electrical Engineering, Dept. of Electrical Engineering and Computer Science (EECS), 2.Korea Advanced Institute of Science and Technology (KAIST))

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-5-1] A 7.6-ps Pulse Generator Using 0.13-μm InP-based HEMTs for Ultra Wide-Band Impulse Radio Systems

Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki, Toshihiro Ohki, Tsuyoshi Takahashi, Kozo Makiyama, Tatsuya Hirose, Naoki Hara (1.FUJITSU LIMITED, 2.FUJITSU LABORATORIES LTD.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[G-5-2] Novel MOBILE Circuits Using 3 RTDs Operating up to 12.5 Gb/s

Hyungtae Kim, Namcheol Jeon, Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

2007 International Conference on Solid State Devices and Materials |PDF Download