The Japan Society of Applied Physics

591 results (431 - 440)

[P-3-1] Impact of Zr/Hf Ratio on Reliability of HfZrOX Gate Dielectric

J.C. Liao, Y.K. Fang*, Y.T. Hou, W. H. Tseng, J. Y. Yang, P.F. Hsu, Y.S. Chao, K.C. Lin, K.T. Huang, T.L. Lee, M.S. Liang (1.VLSI Technology Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, 2.Taiwan Semiconductor Manufacturing Company)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-3-2] Current Transportation Mechanism of HfO2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application

Woei Cherng Wu, Chao Sung Lai, Tsui Ming Wang, Jer Chyi Wang, Ming Wen Ma, Tien Sheng Chao (1.Department of Electronic Physics, National Chiao Tung University, 2.Department of Electronic Engineering, Chang Gung University, 3.Nanya Technology Corporation, 4.Department of Electronics Engineering, National Chiao Tung University)

2007 International Conference on Solid State Devices and Materials |PDF Download

591 results (431 - 440)