[J-8-2] Two-Dimensional Electron Gas Switching in an Ultra Thin Epitaxial ZnO Layer on a Ferroelectric Gate Structure

Yukihiro Kaneko, Hiroyuki Tanaka, Yoshihisa Kato, Yasuhiro Shimada (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-8-3] Manufacturable High-Density 8Mb 1T-1C FRAM Embedded Within a Low-Power 130nm Logic Process

K. R. Udayakumar, T. S. Moise, S. R. Summerfelt, K. Boku, J. Rodriguez, K. Remack, J. Gertas, M. Arendt, G. Shinn, J. Eliason, R. Bailey, P. Staubs (1.Texas Instruments Inc., 2.Ramtron International Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-8-4] Endurance Characterization of Ferroelectric Cell in 64Mb FRAM Device By Analyzing the Space Charge Concentration

E. S. Lee, Y. M. Kang, D. J. Jung, H. H. Kim, Y. K. Hong, J. H. Park, S. K. Kang, J.-H. Kim, H. S. Kim, W. W. Jung, W. S. Ahn, J. Y. Jung, J. Y. Kang, D. Y. Choi, H. K. Goh, S. Y. Kim, S. Y. Lee, H. S. Jeong (1.Advanced Technology Team 2, Semiconductor R&D center, 2.Samsung Electronics Co. LTD.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-9-1] Digital Circuits with Carbon Nanotube Transistors

Arijit Raychowdhury, Juanita Kurtin, Kaushik Roy, Vivek De, Ali Keshavarzi (1.Intel Corporation and Purdue University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-9-2] Advances in Carbon Nanotube Devices and Circuits

Yu-Ming Lin, Zhihong Chen, Joerg Appenzeller, Paul M. Solomon, Phaedon Avouris (1.IBM T. J. Watson Research Center)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-9-3] A Triple Quantum Dot in a Single Wall Carbon Nanotube

Kasper Grove-Rasmussen, Henrik Ingerslev Jorgensen, Toshiaki Hayashi, Poul Erik Lindelof, Toshimasa Fujisawa (1.NTT Basic Research Laboratories, NTT Corporation, 2.Nano-Science Center, Niels Bohr Institute, University of Copenhagen)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-9-4] Electric Property Control of Carbon Nanotubes by Defects

Satoru Suzuki, Jun-ichi Hashimoto, Toshio Ogino, Yoshihiro Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation, 2.Department of Electrical and Computer Engineering Yokohama National University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-9-5] Single charge sensitivity of single-walled carbon nanotube single-hole transistor

T. Kamimura, Y. Ohno, K. Matsumoto (1.Osaka Univ. ISIR, 2.CREST/JST, 3.National Institute of Advanced Industrial Science and Technology)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-10-1] New Measurement Method of Carbon Nanotube Energy Band Gap

M. Maeda, T. Kamimura, S. Iwasaki, K. Matumoto (1.University of Tsukuba, 2.Osaka University, 3.AIST, 4.CREST/JST)

2007 International Conference on Solid State Devices and Materials |PDF Download

[J-10-2] Self-aligned Fabrication Process for Pd-Contacted and PMMA-Passivated Carbon Nanotube Field-Effect Transistors

Lorraine Rispal, Hongyu Yang, Rudolf Heller, Gisela Hess, Gerhard Tzschockel, Udo Schwalke (1.Institute for Semiconductor Technology, Darmstadt University of Technology)

2007 International Conference on Solid State Devices and Materials |PDF Download