The Japan Society of Applied Physics

591 results (441 - 450)

[P-3-7] SiGe Recessed Source-Drain (RSD) Stressors for PMOS: Effect of Device Integration Flow and Increased Ge Content on Electrical Performance

V. Machkaoutsan, P. Verheyen, P. Tomasini, G. Eneman, R. Loo, P. Absil, S.G. Thomas, J.P. Lu, J.W. Weijtmans, R. Wise (1.ASM Belgium N.V., 2.IMEC, 3.ASM America Inc., 4.Catholic University of Leuven, 5.Fund for scientific research Flanders, 6.Texas Instruments assignee to IMEC, 7.Texas Instruments)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-3-9] Investigation of Impact Ionization in Strained-Si nMOSFETs

Ting-Kuo Kang, Yu-Huan Sa, Po-Chin Huang, San-Lein Wu, Shoou Jinn Chang (1.Department of Electronic Engineering, Cheng Shiu University, 2.Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-3-15] Enhanced NBTI Degradation by SMT in Short-Channel pMOSFET

Chen-Shuo Huang, Po-Tsun Liu, Peng-Soon Lim, Chi-Chun Chen, H.J. Tao, Y.J. Mii (1.Institute of Electro-Optical Engineering, National Chiao Tung University, 2.Department of Photonics and Display Institute, National Chiao Tung University, 3.Taiwan Semiconductor Manufacturing Company)

2007 International Conference on Solid State Devices and Materials |PDF Download

591 results (441 - 450)