[P-3-26] Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors

Hsin-Hui Hu, Kun-Ming Chen, Guo-Wei Huang, Chun-Yen Chang, Yii-Chian Lu, Yu-Chi Yang, Eric Cheng (1.Department of Electronics Engineering, National Chiao Tung University, 2.National Nano Device Laboratories, 3.United Microelectronics Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-3-27L] A Comprehensive Study of Hot-Carrier Behaviors with Consideration of Non-Local, Series Resistance, Quantum, and Temperature Effects in Multi-Gate FinFETs

Jin-Woo Han, Donggun Park, Yang-Kyu Choi (1.Dept. of EECS, Korea Advanced Institute of Science and Technology, 2.Device Research Team, Semiconductor R&D Division, Samsung Electronics Co.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-3-28L] Cross-Current SOI MOSFET Model and Important Aspects of CMOS Operations

Yu Azuma, Yoshimasa Yoshioka, Yasuhisa Omura (1.ORDIST, Grad. School of Sci. & Eng., Kansai University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-3-29L] A Comprehensive Modeling Study of Two-Dimensional Silicon Subbands Using a Full-Zone k.p Method

M. Szczap, N. Cavassilas, F. Michelini, F. Payet, F. Boeuf, T. Skotnicki (1.STMicroelectronics, 2.L2MP, CNRS, UMR 6137, Bat. IRPHE, Technopole de Chateau-Gombert)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-4-1] Effect of nano-grain on the memory characteristics of high-κ HfAlO charge trapping layers for nano-scale non-volatile memory device applications

T.-Y. Wang, S. Maikap, P. J. Tzeng, D. Panda, L. S. Lee, M.-J. Tsai, J.-R. Yang (1.Department of Material Science Engineering, National Taiwan University, 2.Department of Electronic Engineering, Chang Gung University, 3.Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-4-2] An Improved Low Voltage Programming Scheme Using Forward Bias Assisted Drain Avalanche Induced Hot Electron Injection on P-Channel EEPROMs

Y. H. Huang, Steve S. Chung (1.Department of Electronic Engineering, National Chiao Tung University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-4-3] Electronic characteristics of charge trapping memory using Al2O3 dielectric

Y. J. Seo, K. C. Kim, H. D. Kim, M. S. Joo, Y. T. Kim, S. H. Pyi, H. Y. Cho, T. G. Kim (1.Dept. of Electronics Eng., Korea Univ., 2.Advenced Process division, Hynix Semiconductor Inc., 3.Dept. of Physics, Dongguk Univ.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-4-4] Low temperature Poly-Si TFT nonvolatile memory devices with In2O3 nano-particles embedded in polyimide

Hyun-Mo Koo, Dong Uk Lee, Seon Pil Kim, Eun Kyu Kim, Jongwan Jung, Won-Ju Cho (1.Department of Electronic Materials Engineering, Kwangwoon University, 2.Quantum-Function Spinics Lab., Department of Physics, Hanyang University, 3.Department of Nano Science and Technology, Sejong University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-4-5] Si Quantum Dot TFT Nonvolatile Memory for System-On-Panel Applications

Wayne Yong, M.B. Yu, R. Yang, W.Y. Loh, Jia Fu, Chunxiang Zhu, G.Q. Lo, N. Balasubramanian, D.-L. Kwong (1.Silicon Nano Device Lab, National University of Singapore, 2.Institute of Microelectronics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-4-6] Effect of Ni1-xPtx Alloy Electrode on the Improved Resistive Switching Characteristics of NiO Thin Films

Chang Bum Lee, Bo Soo Kang, Myoung Jac Lee, Seung Eon Ahn, Genrikh Stefanovich, Wenxu Xianyu, Ki Hwan Kim, Huaxing Yin, Youngsoo Park, In Kyeong Yoo (1.Samsung Advanced Institute of Technology, Semiconductor Device Laboratory)

2007 International Conference on Solid State Devices and Materials |PDF Download