[P-1-7] Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr2O3 Gate Dielectric

Chia-Wen Chang, Jiun-Jia Huang, Hong-Ren Chang, Jam-Wem Lee, Tan-Fu Lei (1.Institute of Electronics, National Chiao-Tung University, 2.Taiwan Semiconductor Manufacturing Company)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-8] Nanoscale-order Homogeneous Structure of SiO2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone.

Naoto Kameda, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichumura (1.Meidensha Corporation, Core Technology Research Laboratories, 2.National Institute of Advanced Industrial Science and Technology (AIST))

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-9] Robust High-κ HfOxNy n-MOSFETs Using Low Work Function TbN Gate

Nai-Chao Su, Chien-Hung Wu, Shui-Jinn Wang, Chen-Kuo Chiang, Ching-Cheng Cheng (1.Institute of Microelectronics, Dept. of Electrical Eng., 2.National Cheng Kung Univ.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-10] Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors

Kouhei Furumai, Hiroki Kondo, Mitsuo Sakashita, Akira Sakai, Masaki Ogawa, Shigeaki Zaima (1.Graduate School of Engineering, Nagoya University, 2.Nagoya University, Ecotopia Science Institute, 3.Graduate School of Engineering Science, Osaka University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-11] Tuning of Work Function of Er-germanide Metal Gates on High-K Dielectric

S. L. Liew, D. H. L. Seng, D. Z. Chi (1.Institute of Materials Research and Engineering)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-12] Galvanic Corrosion Suppression of High-k/Metal Gates using Organic Solvent based HF

D. Watanabe, H. Aoki, S. Hotta, C. Kimura, T. Sugino (1.Department of Electrical Electronic and Information Engineering, Osaka University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-13] Dual Metal Gate MOSFETs with Symmetrical Threshold Voltages Using Work Function Tuned Ta/Mo Bi-layer Metal Gates

T. Matsukawa, Y. X. Liu, K. Endo, M. Masahara, Y. Ishikawa, H. Yamauchi, J. Tsukada, K. Ishii, E. Suzuki (1.Nanoelectronics Research Institiute, AIST)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-14] TiN Gate Work Function Control Using Nitrogen Gas Flow Ratio and RTA-Temperature

Y. X. Liu, T. Hayashida, T. Matsukawa, K. Endo, M. Masahara, S. Ouchi, K. Sakamoto, K. Ishii, J. Tsukada, Y. Ishikawa, H. Yamauchi, A. Ogura, E. Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST), 2.School of Science and Technology, Meiji University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-15] Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing

Yao-Jen Lee, Bo-An Tsai, Hsin-Yi Peng, Charles Pei-Jer Tzeng, Kuei-Shu Chang-Liao (1.National Nano Device Laboratories, 2.Department of Engineering and System Science, National Tsing Hua University, 3.Electronics Research & Service Organization, Industrial Technology Research Institute)

2007 International Conference on Solid State Devices and Materials |PDF Download

[P-1-16] Full Range Work Function Modulation by Nitrogen Incorporation in Hf-Mo Binary Alloys Gate Electrode

Chao-Sung Lai, Chin-Wei Huang, Hsing-Kan Peng, Chih-Hsin Chen, Yu-Ching Fang, Li Hsu, Hui-Chun Wang, Chung-Yuan Lee, Shian-Jyh Lin (1.Department of Electronic Engineering, Chang Gung University, 2.Chung-Shan Institute of Science & Technology Materials & Electro-Optics Research Division, 3.Nanya Technology Corporation)

2007 International Conference on Solid State Devices and Materials |PDF Download