[C-9-2] Influences of Skeletal Structure and Porosity on Dielectric and Mechanical Properties of Porous Organosilica Low-k Films

Syozo Takada, Nobuhiro Hata, Yutaka Seino, Takenobu Yoshino (1.Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (AIST))

2007 International Conference on Solid State Devices and Materials |PDF Download

[C-9-3] Properties of Methyl Boron Nitride Film for Next Generation Low-K Interconnection

S. Tokuyama, M. K. Mazumder, D. Watanabe, C. Kimura, H. Aoki, T. Sugino (1.Dept. of Electrical, Electronic and Information Engineering, Osaka University)

2007 International Conference on Solid State Devices and Materials |PDF Download

[C-9-4] Effects of Silylation on Electrical and Mechanical Characteristics of Mesoporous Pure Silica Zeolite Films

T. Seo, T. Yoshino, N. Ohnuki, Y. Seino, N. Hata, T. Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University, 2.Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST))

2007 International Conference on Solid State Devices and Materials |PDF Download

[C-9-5] Determination of mechanical properties of porous silica low-k films on Si substrates using orientation dependence of surface acoustic wave

Toshinori Takimura, Nobuhiro Hata, Syozo Takada, Takenobu Yoshino (1.Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Science and Technology (AIST))

2007 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] Characterization of Line-edge Roughness in Cu/low-k Interconnect Pattern

Atsuko Yamaguchi, Daisuke Ryuzaki, Ken’ichi Takeda, Jiro Yamamoto, Hiroki Kawada, Takashi Iizumi (1.Central Research Laboratory, Hitachi Ltd., 2.Hitachi High-Technologies Corp.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[C-10-2] Nano-Scale Stress Field Evaluation with Shallow Trench Isolation Structure Assessed by Cathodoluminescence, Raman Spectroscopy, and Finite Element Method Analyses

Masako Kodera, Tadashi Iguchi, Norihiko Tsuchiya, Mizuki Tamura, Shigeru Kakinuma, Nobuyuki Naka, Shinsuke Kashiwagi (1.Process and Manufacturing Engineering Center, Toshiba Semiconductor Company, 2.Toshiba I. S. Corp., 3.Horiba, Ltd.)

2007 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] Channel Strain in Advanced CMOSFETs Measured Using Nano-Beam Electron Diffraction

Akio Toda, Hidetatsu Nakamura, Toshinori Fukai, Nobuyuki Ikarashi (1.Device Platforms Research Laboratories, NEC Corporation, 2.Advanced Device Development Division, NEC Electronics)

2007 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] Next generation compact model for digital and analog circuit design

Tatsuya Ohguro (1.Center for Semiconductor Research & Development Toshiba Corporation Semiconductor Company)

2007 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Characterization and Modeling of Layout Dependent Parametric Variability of Nanometer Devices

Carlo Guardiani, Nicola Dragone, Marco Grottolo, Elisa Redaelli, Sharad Saxena (1.PDF Solutions)

2007 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Investigation of Matching Performance for Uniaxial Strained PMOSFETs

Jack J.-Y. Kuo, William P.-N. Chen, Pin Su (1.Department of Electronics Engineering, National Chiao Tung University)

2007 International Conference on Solid State Devices and Materials |PDF Download

591 results (111 - 120)

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