[H-7-1] Spin Transport in a Single InAs Quantum Dot Attached to Ferromagnetic Electrodes (Invited)

T. Machida^1,2, K. Hamaya^1,3 (1.Univ. of Tokyo, 2.CREST-JST, 3.Kyushu Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-7-2] Hyperfine-coupling-programming of Current Through Coupled Quantum Dots with Multiple-sweep Bias Voltage Waveforms

G. Austing^1,2, C. Payette^1,2, G. Yu¹, J. Gupta¹ (1.National Res. Council of Canada, 2.McGill Univ., Canada)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-7-3] High-frequency Capacitance Measurements in GaAs/AlGaAs Quantum Dots

T. Ota¹, T. Hayashi¹, T. Fujisawa¹ (1.NTT Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-7-4] Tunneling Spectroscopy of Germanium Quantum-dot in Single-hole Transistors with Self-aligned Electrodes

W. T. Lai¹, C. C. Chen¹, D. M. T. Kuo¹, P. W. Li¹ (1.National Central Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-7-5] Implementation of Petri Net using Single-Electron Devices

W. C. Zhang¹, N. J. Wu¹ (1.Chinese Academy of Sci., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-8-1] Spin Blockade and Lifetime Enhanced Transport in a Silicon/Silicon-Germanium Double-Quantum Dot (Invited)

M. A. Eriksson¹, C. B. Simmons¹, N. Shaji¹, M. Thalakulam¹, E. K. Sackmann¹, B. J. Van Bael¹, D. E. Savage¹, M. G. Lagally¹, R. Joynt¹, M. Friesen¹, R. H. Blick¹, A. J. Rimberg¹, S. N. Coppersmith¹ (1.Univ. of Wisconsin-Madison, USA)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-8-2] Single-Electron Transfer by Controlling the Dopant-Induced Quantum Dot Landscape

D. Moraru¹, K. Yokoi¹, M. Ligowski¹, M. Tabe¹ (1.Shizuoka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-8-3] Silicon Radio Frequency Single-electron Transistors Operating at above 4.2 K

M. Manoharan¹, Y. Tsuchiya^1,2,3, S. Oda^1,3, H. Mizuta^1,2,3 (1.Tokyo Tech., Japan, 2.Univ. of Southampton, UK, 3.SORST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-8-4] Silicon based Technology for Single Dopant Orbital Transistor

R. Wacquez^1,2, M. Sanquer¹, M. Vinet², X. Jehl¹, M. Pierre¹, S. Pauliac-Vaujour², G. Molas², T. Poiroux², G. Guegan², S. Deleonibus², D. Kern³ (1.CEA-INAC, 2.CEA-LETI/MINATEC, France, 3.Tübingen Univ., Germany)

2008 International Conference on Solid State Devices and Materials |PDF Download

[H-8-5] Dopant Freeze-out and Potential Fluctuations Observed by Low Temperature Kelvin Probe Force Microscope

M. Ligowski^1,2, M. Anwar¹, D. Moraru¹, R. Jablonski², M. Tabe¹ (1.Shizuoka Univ., Japan, 2.Warsaw Univ. of Tech., Poland)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (311 - 320)

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