[C-3-5] A Fundamental Study Toward the Realization of an SPRAM-based Low Power FPGA

M. Sekikawa¹, K. Kiyoyama¹, T. Fukushima¹, T. Tanaka¹, M. Koyanagi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-3-6] Fabrication of a Standby-Power-Free TMR-based Nonvolatile Memory-in-Logic Circuit Chip with a Spin-Injection Write Scheme

S. Matsunaga¹, J. Hayakawa², S. Ikeda¹, K. Miura², T. Endoh¹, H. Ohno¹, T. Hanyu¹ (1.Tohoku Univ., 2.Hitachi Advanced Res. Lab., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Molecular Dynamics Simulations of Low-k SiOCH Film Etching by Fluorocarbon Plasmas

A. Suzuki¹, M. Isobe¹, S. Kobayashi², M. Fukasawa², T. Tatsumi², S. Hamaguchi¹ (1.Osaka Univ., 2.Sony Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Low-k Film Damage-Resistant CO Chemistry-based Ash Process for Low-k/Cu Interconnection in Flash Memory Devices

J. Lee¹, W. Park¹, D. H. Kim¹, K. Shin¹, J. Choi¹, I. Chung² (1.Samsung Electronics Co., Ltd., 2.Univ. of Sungkyunkwan, Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] Plasma Physics for Reducing PID in Nano-structure Patternings (Invited)

T. Makabe¹, T. Ohba¹, T. Yagisawa¹ (1.Keio Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Diagnostics of Plasma Induced Damages on Low-k SiOCH Films

S. Takashima¹, R. Saito¹, S. Uchida¹, K. Takeda¹, M. Fukasawa², K. Oshima², K. Nagahata², T. Tatsumi², M. Hori^1,3 (1.Nagoya Univ., 2.Sony Corp., 3.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] Electrical Reliabilities of Highly Cross-Linked Porous Silica Film

Y. Kayaba¹, K. Kohmura², H. Tanaka², K. Kinoshita³, S. Chikaki³, T. Kikkawa¹ (1.Hiroshima Univ., 2.Mitsui Chemicals, Inc., 3.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Low-k Impact on Circuit Performance Demonstrated in High-Speed LSIs

M. Tada², N. Inoue¹, J. Kawahara¹, H. Yamamoto¹, F. Ito¹, T. Fukai¹, M. Ueki¹, S. Miyake¹, T. Takeuchi¹, S. Saito¹, M. Tagami¹, N. Furutake¹, K. Hijioka¹, T. Ito¹, Y. Shibue¹, T. Senou¹, R. Ikeda¹, N. Okada¹, Y. Hayashi¹ (1.NEC Electronics Corp., 2.NEC Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] Dielectric Reliability of 50 nm 1/2 Pitch Structures in Aurora^® LK

S. Demuynck¹, H. G. Kim², C. Huffman¹, M. Darnon¹, H. Struyf¹, J. Versluijs¹, M. Claes¹, G. Vereecke¹, P. Verdonck¹, H. Volders¹, N. Heylen¹, K. Kellens¹, D. De Roest³, H. Sprey³, G. P. Beyer¹ (1.IMEC, Belgium, 2.Samsung Electronics Co., Ltd., Korea, 3.ASM, Belgium)

2008 International Conference on Solid State Devices and Materials |PDF Download

[C-7-1] Low-Loss Magnetic Films of Ni-Zn Ferrite by Low-Temperature PVD Method for RF-CMOS Application

K. Kaneko¹, N. Inoue¹, N. Furutake¹, K. Hijioka¹, Y. Hayashi¹ (1.NEC Electronics Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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