[G-7-2] 4H-SiC Power MOSFETs and SBDs of 1.7kV Rating

N. Miura¹, S. Yoshida¹, Y. Nakao¹, Y. Matsuno¹, K. Kuroda¹, M. Imaizumi¹, H. Sumitani¹, H. Yamamoto¹, T. Oomori¹ (1.Mitsubishi Electric Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-7-3] Improvements in Thermal Stability of Hydrogen-terminated Diamond FETs

M. Kubovic¹, Y. Yamauchi¹, M. Kasu¹ (1.NTT Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-7-4] Diamond High Power Devices

H. Umezawa¹, R. Kumaresan¹, K. Ikeda¹, N. Tatsumi², S. Shikata¹ (1.AIST, 2.Sumitomo Electric Industries, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-7-5L] Mechanism of Normally-Off Operation in GaN-Based Transistors by Interstitial Fluorine Incorporation

T. Takizawa¹, T. Ueda¹ (1.Matsushita Electric Industrial Co., Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-7-6L] Electrical Properties of 4H-SiC CMOS with Wet Processed Gate Oxide

M. Okamoto¹, T. Yatsuo¹, K. Fukuda¹, H. Okumura¹ (1.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-8-1] Threshold Voltage Shift in Ga₂O₃-In₂O₃-ZnO (GIZO) Thin Film Transistors under Constant Voltage Stress

M. Fujii¹, H. Yano¹, T. Hatayama¹, Y. Uraoka¹, T. Fuyuki¹, J. S. Jung², J. Y. Kwon², T. Nakanishi³, M. Kimura³ (1.NAIST, Japan, 2.Sumsung Advanced Inst. of Tech., Korea, 3.Ryukoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-8-2] Transparent Oxide Semiconductor-Based Self-Alignment Thin-Film Transistor

Y. Hirouchi¹, A. Yamagishi¹, S. Naka¹, H. Okada¹ (1.Univ. of Toyama, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-8-3] Ring Oscillator Circuit based on ZnO Thin Film Transistors

W. C. Shin¹, K. Remashan¹, M. S. Oh¹, S. J. Park¹, J. H. Jang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-8-4] Mo-doped ZnO Electrode for IGZO Transparent Thin-film Transistor - Its Hard-saturation Behavior

W. S. Cheong¹, J. H. Shin¹, C. W. Byun¹, M. Ryu¹, C. S. Hwang¹ (1.ETRI, Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[G-8-5L] Characteristics of an Enzyme-based ZnO/Zn_0.7Mg_0.3O Heterojunction Field-Effect Transistor as a Glucose Sensor

K. Koike¹, D. Takagi¹, M. Hashimoto¹, T. Hashimoto¹, T. Inoue¹, K. Ogata¹, S. Sasa¹, M. Inoue¹, M. Yano¹ (1.Osaka Inst. of Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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