[P-3-16] Optimization of Source/Drain Overlap to Gate for 16 nm Gate Last MOSFETs

J. Jang¹, T. Lim¹, H. Kim¹, Y. Kim¹ (1.Hongik Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-17] Effect of Nickel Silicide Intrusion on Schottky Barrier Nanowire MOSFET Fabricated using Top-down Technology

Y. K. Chin^1,2,3, K. L. Pey¹, N. Singh², G. Q. Lo², L. Chan³, L. H. Tan², E. J. Tan^1,2 (1.Nanyang Technological Univ., 2.Inst. of Microelectronics, 3.Chartered Semiconductor Manufacturing Ltd., Singapore)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-18] Electrical and Structural Evaluations of Ultrathin SiGe- and Ge-on-insulator Fabricated using Ge Condensation by Dry Oxidation

H. Yang¹, D. Wang¹, H. Gao¹, K. Hirayama¹, K. Ikeda¹, S. Hata¹, H. Nakashima¹ (1.Kyushu Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-19] Triple-gate FinFETs with Fin-thickness Optimization to Reduce the Impact of Fin Line Edge Roughness

S. Yu¹, Y. Zhao¹, G. Du¹, J. Kang¹, R. Han¹, X. Liu¹ (1.Peking Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-20] Analysis of Fowler-Nordheim Stress Induced Trap Generation on Random Telegraph Signal Noise

Y. Son¹, H. Shin¹ (1.Seoul National Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-21] Effect of Hot-Carrier-Induced Hole Trapping on n-Type LDMOS Transistors

K. S. Tian¹, J. F. Chen¹, S. Y. Chen¹, J. R. Lee¹, K. M. Wu², C. M. Liu² (1.National Cheng Kung Univ., 2.Taiwan Semiconductor Manufacturing Co., Ltd., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-22] Impact of Tungsten Capping Layer on Yttrium Silicide for Low Resistance Source/Drain Contacts

T. Isogai¹, H. Tanaka¹, T. Goto¹, A. Teramoto¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-23] Multiple-gated Poly-Si Nanowire Thin-Film Transistors

T. W. Liu¹, H. H. Hsu¹, Z. M. Lin¹, C. D. Lin², T. Y. Huang¹, H. C. Lin^1,2 (1.National Chiao Tung Univ., 2.National Nano Device Labs., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-24] Subthreshold Current Model of Cylindrical Gate-All-Around Nanowire MOSFETs using Analytical Solutions of Poisson's Equation

Y. S. Wu¹, P. Su¹ (1.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-3-25] Low-frequency Noise Characteristics of SiGe-channel PMOSFETs with High-compressive ILD-SiN_x Stressing Layer

Y. T. Chen¹, K. M. Chen², W. S. Liao³, G. W. Huang², F. S. Yeh¹ (1.National Tsing Hua Univ., 2.National Nano Device Labs., 3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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