[C-2-1] Growth and Characterization of Novel Material and Heterostructure III-V Semiconductor Nanowires

S. Lehmann¹、S. Ghalamestani¹、D. Jacobsson¹、M. Heurlin¹、J. Bolinsson¹、M. E. Messing¹、L. E. Wernersson³、J. Johansson¹、P. Caroff⁴、K. Deppert¹、K. A. Dick^1,2 (1.Solid State Physics, Lund Univ.,、2.Polymer & Materials Chemistry, Lund Univ.、3.Electrical and Information Technologies, Lund Univ.、4.Institut d'Electronique, de Microelectronique et de Nanotechnologie, UMR , Sweden)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-2] InAsP-InAs-InAsP hetero-nanowires grown via the self-assisted vapor-liquid-solid mode

G. Zhang¹、K. Tateno¹、H. Gotoh¹、T. Sogawa¹ (1.NTT Basic Res. Labs. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-3] Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy

Y. Kohashi¹、S. Sakita^1,2、S. Hara^1,2、J. Motohisa¹ (1.Graduate School of Info. Sci. and Tech., Hokkaido Univ.、2.Res. Center for Integrated Quantum Electronics, Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-4] Tuning the electro-optical properties of nanowires by applying uniaxial and ultrahigh strain

A. Lugstein¹、J. Greil¹、C. Zeiner¹、J. Stangl²、M. Keplinger²、R. Grifone²、D. Kriegner²、C. Somaschini³、L. Geelhaar³、E. Bertagnolli¹ (1.Vienna Univ. of Tech., Inst. for Solid State Electronics、2.Johannes Kepler Univ. Linz, Inst. of Semiconductor and Solid State Physics , Austria、3.Paul-Drude-Inst. for Solid State Electronics , Germany)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-2-5] Growth and Characterization of AlGaAs Nanowires on Insulateing Al₂O₃ Layers by Selective-Area Metal-Organic Vapor Phase Epitaxy

S. Sakita¹、M. Yatago¹、S. Hara¹ (1.Hokkaido Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-1] Metal Oxide Nanowires: Synthesis and Memristive Properties

T. Yanagida¹ (1.The Inst. of Scientific and Industrial Research, Osaka Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-2] ANALYTIC COMPACT MODEL of BALLISTIC and QUASI-BALLISTIC CYLINDRICAL GATE-ALL-AROUND MOSFET INCLUDING TWO SUBBANDS

H. Cheng^1,2、S. Uno^2,3、T. Numata^1,2、K. Nakazato¹ (1.Nagoya Univ.、2.CREST、3.Ritsumeikan Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-3] Fully Encapsulated Gate-All-Around InAs Nanowire FET

S. Sasaki¹、G. Zhang¹、K. Tateno¹、H. Suominen¹、Y. Harada¹、S. Saito¹、A. Fujiwara¹、T. Sogawa¹、K. Muraki¹ (1.NTT Basic Research Labs., NTT Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-4] Isotope Effect on Phonon Thermal Transport in Silicon Nanowires

J. Hattori^1,2、S. Uno^1,2 (1.Ritsumeikan Univ.、2.JST, CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-1] Progress and challenges in large-scale graphene Tech. for RF applications

S. J. Han¹ (1.IBM T. J. Watson Research Center , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード