[PS-3-11] Wire-Orientation Dependence in Device Performances of Si and InAs Nanowire MOSFETs under Ballistic Transport

K. Shimoida¹、Y. Yamada¹、H. Tsuchiya^1,2、M. Ogawa¹ (1.Kobe Univ.、2.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-12] A Novel Sub-20V Contact Gate MOSFET with Fully CMOS Compatible Process

T. L. Lee¹、M. T. Tsai¹、Y. C. King¹、C. J. Lin¹ (1.National Tsing-Hua Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-13] Monte Carlo Study on the Role of High Channel Doping in Junctionless Transistors

K. Nagai¹、S. Koba¹、H. Tsuchiya^1,2、M. Ogawa¹ (1.Kobe Univ.、2.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-14] High-Performance CMOS Inverters Comprising Lateral Large-Grained Low-Temperature Poly-Si TFTs on Transparent Flexible Glass

S. Kamo¹、K. Kondo¹、A. Hara¹ (1.Tohoku Gakuin Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-15] Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion Implantation Induced Relaxation Technique

T. Mizuno¹、J. Takehi¹、Y. Abe¹、H. Akamatsu¹ (1.Kanagawa Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-16] An Improved Compact Model for Doped Double-Gate MOSFETs Using a Rigorous Perturbation Method and Higher-Order Correction

X. Feng¹、W. Kang²、Q. Cheng³、Y. Chen⁴ (1.Shenzhen Graduate School, Peking Univ.、2.Shenzhen Graduate School, Peking Univ.、3.Shenzhen Graduate School, Peking Univ.、4.Shenzhen Graduate School, Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-17] Extraction of Carrier Concentration and Mobility of Heavily Doped Poly-Si Nanowires with Junctionless (JL) Transistor Structures

Z. M. Lin¹、H. C. Lin^1,2、T. Y. Huang¹ (1.National Chiao Tung Univ.、2.National Nano Device Labs. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-18] Impact of Backgate Bias on the Sensitivity of Threshold Voltage to Process and Temperature Variations for Ultra-Thin-Body GeOI and InGaAs-OI MOSFETs Considering Quantum Confinement

C. H. Yu¹、P. Su¹ (1.National Chiao Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-19] Off-Current Fluctuations in 10-nm Trigate MOSFETs - Impact of the Channel Geometry

R. Granzner¹、F. Schwierz¹ (1.Ilmenau Univ. of Tech. , Germany)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-20] Analysis and Modeling of Geometry Dependent Thermal Resistances in MOSFETs

X. Zhou^1,2、T. Inoue¹、M. Kitamura¹、K. Matsuura¹、M. Miyake¹、T. Iizuka¹、H. Kikuchihara¹、M. Naito¹、H. J. Mattausch¹、J. He²、M. MiuraMattausch¹ (1.Hirshima Univ. , Japan、2.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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