[E-8-2] Evolution of Electron Trapping under Positive-Bias Temperature Stressing of the HfO2/TiN Gate n-MOSFET

Y. Gao¹、D. S. Ang¹、C. D. Young²、G. Bersuker² (1.Nanyang Technological Univ. , Singapore、2.SEMATECH , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-3] Random Telegraph Signals under External Mechanical Stress: A New Method to Probe Trap Structural Relaxation in MOSFET Gate Dielectrics

K. C. Tu¹、M.J. Chen¹ (1.Univ. of National Chiao Tung , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-4] Low frequency noise assessment of accumulation Si p-MOSFETs

P. Gaubert¹、A. Teramoto¹、S. Sugawa^1,2、T. Ohmi¹ (1.New Industry Creation Hatchery Center, Tohoku Univ.、2.Graduate School of Engineering, Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-1] Characterization and Modeling of Back Bias Impacts on Remote-Coulomb-Limited Mobility in UTBB-FDSOI Devices

D. Rideau¹、F. Monsieur¹、Ben Akkez^1,2、S. Haendler¹、A. Cros¹、O. Nier^1,2、O. Saxod¹、C. Tavernier¹、H. Jaouen¹ (1.STMicroelectronics , STM、2.IMEP-LAHC , IMEP)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-9-2] Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire MOSFETs Based on Radio-Frequency Analysis

K. R. Kim¹、S. Shin¹、S. Cho²、J. H. Lee³、I. M. Kang³ (1.Ulsan National Inst. of Sci. and Tech. , Korea、2.Stanford Univ. , USA、3.Kyungpook National Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード