[B-5-2] Low power and improved switching properties of selector-less Ta2O5 based ReRAM using Ti-rich TiN electrode

B. Kim¹、W. Kim¹、H. Kim¹、K. Jung¹、W. Park¹、B. Seo¹、M. Joo¹、K. Lee¹、K. Hong¹、S. Park¹ (1.SK Hynix Inc. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Formation free and high-performance cross-point resistive switching memory using Ir/TaOx/W structure

A. Prakash¹、S. Maikap¹、C. S. Lai¹、W. S. Chen²、H. Y. Lee²、F. T. Chen²、M. J. Tsai² (1.Chang Gung Univ.、2.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4L] Investigation of Resistive Switching Mechanism and Improved Memory Characteristics Using IrOx/high-kx/W Structure

S. Maikap¹、W. Banerjee¹、B. L. You¹、D. Jana¹、H. Y. Lee²、W. S. Chen²、F. T. Chen²、M. J. Kao²、M. J. Tsai² (1.Chang Gung Univ.、2.Electronics and Opto-Electronics Res. Laboratories, Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] A Physics-based Model of Resistive Switching in Metal Oxides

D. Ielmini¹、S. Larentis¹、S. Balatti¹ (1.Politecnico di Milano , Italy)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Impacts of Device Architecture and Low Current Operation on the Resistive Switching of HfOx Nanoscale Memory

Y. S. Chen¹、P. S. Chen²、H. Y. Lee¹、K. H. Tsai¹、T. Y. Wu¹、C. H. Tsai¹、W. S. Chen¹、P. Y. Gu¹、F. Chen¹、M. J. Tsai¹ (1.Indus. Tech. Res. Inst.、2.MingShin Univ. of Science & Tech. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] Threshold switching and conductance quantization in Al/HfO2/Si(p) structures

J. Sune¹、E. Miranda¹、D. Jimenez¹、X. Saura¹、S. Long²、L. Ming²、J. M. Rafi³、F. Campabadal³ (1.Univ. Autonoma de Barcelona , Spain、2.Inst. of Microelectronics Chinese Academy of Sciences , China、3.Inst. de Microelectronica de Barcelona, CSIC , Spain)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-4] Improved Resistive-switching Performance of HfO2-based RRAM devices by Reduction Effect of Hydrogen Annealing: Defect Engineering

S. Kim¹、D. Lee¹、J. Park¹、S. Jung¹、W. Lee¹、J. Shin¹、J. Woo¹、G. Choi¹、E. Cha¹、H. Hwang¹ (1.Gwangju Inst. of Science and Tech. , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-5L] Physical Guiding Principles for High Quality ReRAM Stack with Al2O3 O Vacancy Barrier Layer

M. Y. Yang¹、K. Kamiya¹、B. Magyari Kope²、M. Niwa¹、Y. Nishi²、K. Shiraishi¹ (1.Univ. of Tsukuba , Japan、2.Univ. of Stanford , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-1] Resistive Switching in Transition Metal Oxide ReRAM Devices

B. Magyari-Köpe¹、Y. Nishi¹ (1.Stanford Univ. , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-2] Promising Bipolar and Unipolar Resistive Switching in Ti-Doped Yb2O3 Thin Film

S. Mondal¹、F. H. Chen¹、C. W. Wang¹、J. L. Her¹、Y. H. Matsuda²、T. M. Pan¹ (1.Chang Gung Univ. , Taiwan、2.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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