[E-6-1] Design-friendly scalability of cost-effective 28LP Tech. platform featuring 2nd generation gate-first HK/MG transistors without eSiGe

H. Fukutome¹、S. D. Kwon¹、S. Maeda¹、S. Paak¹ (1.System LSI business, Samsung Electronics Co., Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-2] Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs and Bulk MOSFETs

T. Mizutani¹、Y. Yamamoto²、H. Makiyama²、T. Tsunomura²、T. Iwamatsu²、H. Oda²、N. Sugii²、T. Hiramoto¹ (1.Univ. of Tokyo、2.Low-power Electronics Association & Project , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-3] Analysis of Read Margin Improvement for Low Voltage SRAM Composed of Nano-Scale MOSFETs with Ideal Subthreshold Factor and Small Variability

C. Tanaka¹、M. Saitoh¹、K. Ota¹、T. Numata¹ (1.Toshiba Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-4] A Comparative Study of Minimal Supply Voltage of 6T-SRAM at the 16nm node using MASTAR into a Conventional CAD Environment

J. Lacord^1,2、G. Ghibaudo²、F. Boeuf¹ (1.STMicroelectronics、2.IMEP-LAHC Lab. , France)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-6-5L] Optimization of 14-nm Node Bulk/SOI FinFETs for SoC Platform: Thermal Conductivity, Operation Temperature, and Analog Performance Analysis

T. Takahashi^1,2、N. Beppu^1,2、S. Oda¹、K. Uchida^1,2 (1.Tokyo Inst. Tech.、2.Keio Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-1] Comprehensive Understandings on Reliability Modulations in Compressive Stressed (100)- and(110)-Orientated Silicon CMOSFETs

J. Chen¹、I. Hirano¹、M. Saitoh¹、K. Tatsumura¹、Y. Mitani¹ (1.Advanced LSI Tech. Lab., Corporate Research & Development Center, Toshiba Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-2] Inelastic Acoustic Phonon Scattering in Ultra-thin SOI and Nanowire Structures

N. Mori^1,2 (1.Osaka Univ.、2.JST CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-3] Surface-Orientation/Strain Dependence of Quantum Confinement Effects in Si Monolayers for Future CMOS Devices

T. Mizuno¹、K. Higa¹、Y. Nakajima¹、D. Urata¹、Y. Abe¹、H. Akamatsu¹、Y. Nagata¹、K. Sato¹、J. Takehi¹、T. Sameshima² (1.Kanagawa Univ.、2.Tokyo Univ. of Agriculture and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-7-4] Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces Using Conductance Method

S .H. Shin¹、N. Taoka²、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[E-8-1] NBTI Induced Mobility Degradation - Models for TCAD and SPICE Applications

A. Chaudhary¹、S. Mahapatra¹ (1.IIT Bombay , India)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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