[F-6-2] 600-V 27-mΩ Normally-off SiC JFET for High Efficiency Power Supply

H. Shimizu¹、H. Okino¹、S. Akiyama¹、K. Katoh¹、N. Yokoyama¹、K. Ishikawa¹ (1.Hitachi Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-3] Lateral High-Voltage 4H-SiC IGBTs

W. S. Lee¹、C. Y. Cheng¹、K. W. Chu¹、C. F. Huang¹、F. Zhao²、L. S. Lee³、Y. S. Chen³、C. Y. Lee³、M. J. Tsai³ (1.National Tsing Hua Univ. , Taiwan、2.Washington State Univ. , USA、3.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-4] Significant Effect of JFET Doping on Low On-resistance 4H-SiC DMOSFETs of 3300 V Rating

K. Hamada¹、N. Miura^1,2、S. Hino^1,2、T. Kawakami¹、M. Imaizumi¹、H. Sumitani¹、T. Oomori^1,2 (1.Mitsubishi Electric Corp.、2.R&D Partnership for Future Power Electronics Tech. (FUPET) , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-6-5] Advanced SiC Devices with Trench Structure

T. Nakamura¹、M. Aketa¹、Y. Nakano¹ (1.New Material Devices R&D Center, ROHM Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-1] High Quality SiO2/Al2O3 Gate Stack for GaN MOSFET

H. Kambayashi^1,2、T. Nomura¹、H. Ueda³、K. Harada⁴、Y. Morozumi⁴、K. Hasebe⁴、A. Teramoto²、S. Sugawa²、T. Ohmi² (1.Advanced Power Device Reserch Association、2.Tohoku Univ.、3.Tokyo Electron Tech. Deveropment Inst. Inc.、4.Tokyo Electron Tohoku Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-2] Interface characterization of Al2O3/AlGaN/GaN structure with inductively coupled plasma etching of AlGaN surface

Z. Yatabe¹、Y. Hori¹、S. Kim¹、T. Hashizume^1,2 (1.Hokkaido Univ.、2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-3] Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping

H. A. Shih¹、T. Q. Nguyen¹、M. Kudo¹、T. Suzuki¹ (1.JAIST , JAPAN)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-7-4] Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation

T. Oishi¹、K. Hayashi¹、Y. Yamaguchi¹、H. Otsuka¹、K. Yamanaka¹、M. Nakayama¹、Y. Miyamoto² (1.Mitsubishi Electric Corp.、2.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-1] Fully Transparent AZO Thin-film Transistors Fabricated on Flexible Plastic Substrates at Room Temperature

W. Wang¹、D. D. Han¹、J. Cai¹、Y. F. Geng¹、L. L. Wang¹、Y. Tian¹、Y. Wang¹、S. D. Zhang¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-8-2] High Performance Dual Gate Amorphous In-Ga-Zn-O Thin Film Transistor with Nanometer Dot-like Doping

H. W. Zan¹、C. H. Liao¹、C. H. Li¹、C. C. Tsai¹、W. T. Chen²、C. H. Hsu² (1.National Chiao Tung Univ.、2.E Ink Holdings Inc. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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