[A-7-2] P-I-N Ge on Si photodiodes for high speed and low power consumption receivers

L. Virot^1,2,3、L. Vivien¹、J. M. Hartmann²、J. M. Fedeli²、D. Marris Morini¹、E. Cassan¹、C. Baudot³、F. Boeuf³ (1.Univ. Paris-Sud、2.CEA LETI、3.STMicroelectronics , France)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-3] 45 GHz Bandwidth of Si Waveguide-Integrated PIN Ge Photodiode,and its Zero-Bias Voltage Operation

J. Fujikata^1,2、M. Noguchi^1,2、M. Miura^1,2、D. Okamoto^1,2、T. Horikawa^1,3、Y. Arakawa^1,4 (1.PECST、2.PETRA、3.AIST、4.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-4] Infrared Absorption of N-type Tensile-Strained Ge-on-Si

X. Wang¹、H. Li¹、R. Camacho²、Y. Cai²、L. C. Kimerling²、M. Jurgen²、J. Liu¹ (1.Dartmouth College、2.Massachusetts Inst. of Tech. , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-5] Ge Selective Growth in Micron and Submicron Trenches with UHV-CVD

Y. Mizuno¹、Y. Ishikawa¹、K. Wada¹ (1.Univ. of Tokyo , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-6] SiGe Quantum Dots on Si Pillars for Visible Photodetection

W. T. Lai¹、P. H. Liao¹、A. Homyk²、A. Scherer²、P. W. Li¹ (1.National Central Univ. , Taiwan、2.California Inst. of Tech. , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] Overview and Future Challenge of High Density DRAM for 20nm and beyond

Y. Hwang¹、J. Park¹、G. Y. Jin¹、C. Chung¹ (1.Samsung Electronics Co., Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Novel Field Effect Diode type Vertical Capacitorless 1T-DRAM Cell with Negative Hold Bit Line Bias Scheme for Improving the Hold Characteristics

T. Imamoto^1,2、T. Endoh^1,2 (1.Tohoku Univ.、2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor

T. Ishizu¹、H. Inoue¹、T. Matsuzaki¹、S. Nagatsuka¹、Y. Okazaki¹、T. Onuki¹、A. Isobe¹、Y. Shionoiri¹、K. Kato¹、T. Okuda¹、J. Koyama¹、S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-1] New erase verify scheme for improving the cycling endurance of 2xnm NAND flash cell

J. Kim¹、T. Youn¹、S. Seo¹、N. Park¹、S. Yi¹、E. Park¹、H. Kim¹、H. Yang¹、K. Noh¹、S. Park¹、S. Lee¹ (1.SK hynix Inc. , South Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-2-2] Characterization RTN(Random Telegraph Noise) Generated by Process and Cycling Stress Induced Traps in 26nm NAND Flash Memory

B. S. Jo¹、H. J. Kang¹、S. M. Joe¹、M. K. Jeong¹、S. K. Park²、K. R. Han²、B. G. Park¹、J. H. Lee¹ (1.Seoul National Univ.、2.SK Hynix Inc. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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