[C-8-3] Theory of Graphene on SiC(11-20)a Substrate

H. Kageshima¹、H. Hibino¹ (1.NTT Basic Res. Labs. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-1] Ultimate Scaling of High-k Gate Dielectrics: Current Status and Challenges

T. Ando¹、M. M. Martin¹、E. A. Cartier¹、B. P. Linder¹、J. Rozen¹、K. Choi² (1.IBM T. J. Watson Research Center、2.GLOBALFOUNDRIES , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-2] Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech.

A. Veloso¹、S. A. Chew¹、Y. Higuchi²、L. A. Ragnarsson¹、E. Simoen¹、T. Schram¹、T. Witters¹、A. Van Ammel¹、H. Dekkers¹、H. Tielens¹、K. Devriendt¹、N. Heylen¹、F. Sebaai¹、S. Brus¹、P. Favia¹、J. Geypen¹、H. Bender¹、A. Phatak³、M. S. Chen⁴、X. Lu⁴、S. Ganguli⁴、Y. Lei⁴、W. Tang⁴、X. Fu⁴、S. Gandikota⁴、A. Noori⁴、A. Brand⁴、N. Yoshida⁴、A. Thean¹、N. Horiguchi¹ (1.IMEC , Belgium、2.Panasonic , Japan、3.Applied Materials Belgium NV , Belgium、4.Applied Materials Inc. , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-3] Enhanced Hole Mobility in High-k Gated pMOSFETs by Dislocation-free Epitaxial Si/Ge Super-lattice Channel

L. J. Liu¹、K. S. Chang Liao¹、C. H. Fu¹、H. C. Hsieh¹、C. C. Lu¹、T. K. Wang¹、P. Y. Gu²、M. J. Tsai² (1.National Tsing Hua Univ.、2.Indus. Tech. Res. Inst. , Taiwan, R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-4] RMG Tech. Integration in FinFET Devices

G. Boccardi¹、R. Ritzenthaler¹、M. Togo¹、T. Chiarella¹、M. S. Kim¹、S. Yuichiro¹、A. Veloso¹、S. A. Chew¹、E. Vecchio¹、S. Locorotondo¹、K. Devriendt¹、P. Ong¹、S. Brus¹、N. Horiguchi¹、A. Thean¹ (1.IMEC , Belgium)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-1-5] Fabrication and Demonstration of Ultra Short Channel Atomically Thin SOI MOSFETs (AT-FET) Using Anisotropic Wet Etching and Lateral Dopant Diffusion

S. Migita¹、Y. Morita¹、M. Masahara¹、H. Ota¹ (1.GNC-AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-1] Raman spectroscopy for strain measurement in state-of-the-art LSI

A. Ogura¹、D. Kosemura¹、M. Takei²、M. Tomita² (1.School of Science and Tech., Meiji Univ.、2.JSPS Research Fellow , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-2] Analysis of Channel Stress Induced by NiPt-silicide and Its Generation Mechanism

M. Mizuo¹、T. Yamaguchi²、S. Kudo²、Y. Hirose^1,2、H. Kimura²、J. Tsuchimoto²、N. Hattori² (1.Renesas Semiconductor Engineering Corp.、2.Renesas Electronics Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-3] Band-offset Determination at Ge/GeO2 Interface by Internal Photoemission and Charge-corrected X-ray Photo-electron Spectroscopies

W. F. Zhang^1,2、T. Nishimula^1,2、K. Nagashio^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-2-4] Characterization of phosphorus-implanted n+/p Ge junctions by reversely biased leakage current and Raman spectroscopy

C. H. Lee^1,2、T. Tabata^1,2、T. Nishimura^1,2、K. Nagashio^1,2、K. Kita^1,2、A. Toriumi^1,2 (1.Univ. of Tokyo、2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード