[PS-3-1] Current Enhancement of Green Transistors as Compare to Conventional Tunnel FETs with Dopant Segregated Process

M. H. Lee¹、J. C. Lin¹、C. Y. Kao¹、C. W. Chen²、J. D. Luo¹、Y. J. Lee³、G. L. Luo³ (1.National Taiwan Normal Univ.、2.National Cheng Kung Univ.、3.National Nano Device Lab. , TAIWAN)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-2] Influence of Structural Parameters on Performance of Schottky Tunneling FET Electrical Characteristics and its Scalability

Y. Wu^1,2,3、C. Dou^1,2,3、K. Kakushima²、K. Ohmori⁴、P. Ahmet¹、T. Watanabe⁵、K. Tsutsui²、A. Nishiyama²、N. Sugii²、K. Natori¹、K. Yamada⁴、Y. Kataoka²、T. Hattori¹、H. Iwai¹ (1.Tokyo Tech.、2.Tokyo Tech.、3.Univ. of Tsukuba、4.Univ. of Tsukuba、5.Waseda Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-3] Enhanced Subthreshold and Output Characteristics in Tunnel Field -Effect Transistors Using Shallow Junction Technologies

H. Y. Chang¹、S. Chopra²、B. Adams²、J. Li²、S. Sharma²、Y. Kim²、S. Moffatt²、P. Y. Chien¹、B. C. Huang¹、J. C.S. Woo¹ (1.Univ. of California, Los Angeles、2.Applied Materials Inc , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-4] Epitaxial Tunnel Layer Structure for Complementary Tunnel FETs Enhancement

P. Y. Wang¹、B. Y. Tsui¹ (1.National Chiao Tung Univ. , Taiwan, R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-5] EOT Scaling in Tunnel Field-Effect Transistors: Trade-off between Subthreshold Steepness and Gate Leakage

T. Mori¹、K. Fukuda¹、T. Yasuda¹、A. Tanabe¹、T. Maeda¹、S. O'uchi¹、Y. Liu¹、W. Mizubayashi¹、M. Masahara¹、H. Ota¹ (1.GNC-AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-6] Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation

Y. J. Yoon¹、S. Cho³、J. H. Seo²、I. M. Kang^1,2、B. G. Park⁴、J. H. Lee^1,2 (1.National Univ. Kyungpook、2.National Univ. Kyungpook , Republic of Korea、3.Univ. of Stanford , USA、4.National Univ. of Seoul , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-7] Low Leakage Junctionless Vertical Pillar Transistor

Y. C. Yin¹、H. C. Chang¹、C. W. Liu^1,2 (1.National Taiwan Univ.、2.National Nano Device Labs. , Taiwan, R.O.C)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-8] High-performance Short-channel Germanium nMOSFETs without Phosphorus Diffusion in n+/p Source/Drain Junctions

C. T. Chung¹、G. L. Luo²、B. Y. Chen²、C. W. Chen¹、W. C. Chen¹、C. H. Chien^1,2 (1.National Chiao-Tung Univ.、2.National Nano Device Laboratories , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-9] Subband structure and effective mass of two dimensional hole gas in strained Ge channels

Y. Hoshi^1,2、R. Moriya²、K. Sawano¹、N. Usami³、T. Machida²、Y. Shiraki¹ (1.ARL, Tokyo City Univ.、2.IIS, Univ. of Tokyo、3.IMR, Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-3-10] Impact of Scattering on the Strained Ge Nanowire pFETs

J. Qin¹、J. Zhang¹、G. Du¹、X. Liu¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード