[J-5-02] Texture Control for Cu Hybrid Bonding Pads using a PVD Cu Process

^○J. De Messemaeker¹, N. Jourdan¹, P. Nolmans¹, S.-W. Kim¹, G. Beyer¹ (1.imec (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:30 〜 09:45 |PDF ダウンロード

[J-5-03] Microstructural Analysis of Sintered Ag Interconnections through Different Reduction Methods

J.-H. Liu¹,^○J.-M. Song¹ (1.Nat'l Chung Hsing Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:45 〜 10:00 |PDF ダウンロード

[J-5-04] Development of Electret made of SiO₂ Thin Film with Micro Bump Array to Avoid Electrostatic Stiction and Enhance Its Surface Potential

^○M. Suzuki¹, Y. Onishi¹, T. Takahashi¹, S. Aoyagi¹ (1.Kansai Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:00 〜 10:15 |PDF ダウンロード

[J-6-01 (Invited)] Metallization Technology for High Current Density and High Temperature Operation Power Modules

^○K. Sugiura¹, T. Iwashige¹, K. Tsuruta¹, Y. Sakuma², Y. Oda³, C. Chen⁴, S. Nagao⁴, T. Sugahara⁴, K. Suganuma⁴ (1.DENSO CORP. (Japan), 2.C.Uyemura & Co.,Ltd., Techinical Support Group (Japan), 3.C.Uyemura & Co.,Ltd., Central Research Lab. (Japan), 4.Osaka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:30 〜 11:00 |PDF ダウンロード

[J-6-02] Uniformity Characterization of Printed Schottky Contacts Formed on n-GaN Epitaxial Layers by Using Ag Nanoink

^○K. Shiojima¹, Y. Kashiwagi², A. Koizumi³, M. Saitoh², T. Tamai², Y. Fujiwara³ (1.Univ. of Fukui (Japan), 2.Osaka Res. Insti. of Indus. Sci. and Tech. (Japan), 3.Osaka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:00 〜 11:15 |PDF ダウンロード

[J-6-03] Rapid Laser Annealing Method for Printing Silver Electrodes in Organic Thin-Film Transistors

C. Liu¹,^○K. Huang¹, F. Dai¹, X. Liu², T. Minari² (1.Sun Yat-sen Univ. (China), 2.NIMS (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:15 〜 11:30 |PDF ダウンロード

[J-6-04] Semi-CNTs-based flexible TFTs fabricated by room-temperature printing with high performance

^○Q. Sun¹, W. Li¹, X. Liu², M. Kanehara³, J. Zhao⁴, T. Minari¹ (1.NIMS (Japan), 2.Zhengzhou Univ. (China), 3.C-Ink. Co., Ltd., (Japan), 4.Chinese Academy of Sciences (China))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:30 〜 11:45 |PDF ダウンロード

[J-6-05] Direct Formation of Metal Patterns for Flexible Electronic Devices

^○W. Li¹, Q. Sun¹, L. Li¹, X.-Y. Liu², T. Minari¹ (1.NIMS (Japan), 2.Zhengzhou Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:45 〜 12:00 |PDF ダウンロード

[K-1-01 (Invited)] Development of GaN Power Integrated Circuits

^○J. Wei¹, K.J. Chen¹ (1.Hong Kong Univ. of Sci. and Tech. (Hong Kong))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:00 〜 14:30 |PDF ダウンロード

[K-1-02] Demonstration of 1200 V / 1.4 mΩ cm² Vertical GaN Planar MOSFET Fabricated by All Ion Implantation Process

^○R. Tanaka¹, S. Takashima¹, K. Ueno¹, H. Matsuyama¹, Y. Fukushima¹, M. Edo¹, K. Nakagawa² (1.Fuji Electric Co., Ltd. (Japan), 2.Univ. of Yamanashi (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:30 〜 14:45 |PDF ダウンロード