[D-4-02] Band Alignment in Charge-Transfer-Typep⁺-WSe₂/MoS₂ Tunnel FET

^○K. Nakamura¹, N. Nagamura², K. Ueno³, T. Taniguchi², K. Watanabe², K. Nagashio¹ (1.Univ. of Tokyo (Japan), 2.NIMS (Japan), 3.Saitama Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 16:00 〜 16:15 |PDF ダウンロード

[D-4-03] High Performance Three-Terminal Synaptic Transistor based on Ferroelectric Hf_0.5Zr _0.5O₂/Tungsten Disulfide for Neuromorphic Computing

^○L. Chen^1,2, L. Wang^1,2, Y. Peng³, X. Feng^1,2, S. Sarkar⁴, S. Li^1,2, B. Li^1,2, L. Liu⁵, J. Chen⁵, Y. Liu³, G. Han³, K.-W. Ang^1,2 (1.Department of Electrical and Computer Engineering, National Univ. of Singapore (Singapore), 2.Centre for Advanced 2D Materials, National Univ. of Singapore (Singapore), 3.State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian Univ. (China), 4.NUSNNI-NanoCore, National Univ. of Singapore (Singapore), 5.Department of Materials Science and Engineering, National Univ. of Singapore (Singapore))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 16:15 〜 16:30 |PDF ダウンロード

[D-5-01 (Invited)] Development of Quantum Dot Lasers and their Applications

^○K. Nishi¹, K. Takemasa¹, M. Sugawara¹ (1.QD Laser, Inc. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:00 〜 09:30 |PDF ダウンロード

[D-5-02] Enhncement to Optical Gain Difference of Structures and Interdot spacing in Multi-stack Semiconductor Quantum Dots

^○K. Goshima¹, N. Tsuda¹, T. Sugaya², T. Amano² (1.Aichi Institute of Technology (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:30 〜 09:45 |PDF ダウンロード

[D-5-03] Growth and Electrical Properties of In-Situ Doped GeSn Nanowires for Low Power Tunnel Field Effect Transistor.

^○T.J. Haffner¹, F. Bassani¹, P. Gentile², N. Pauc², E. Martinez³, T. Baron¹, E. Robin⁴, S. David¹, B. Salem¹ (1.CEA/LETI/DCOS/LTM (France), 2.CEA/INAC-Pheliqs (France), 3.CEA/LETI/DTSI (France), 4.CEA/INAC-MEM (France))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:45 〜 10:00 |PDF ダウンロード

[D-5-04 (Late News)] Realization of Large Breakdown Voltage of GaAsSb-Based Backward Diodes using Carrier Depletion Effect Originating from Nanowires

^○T. Takahashi^1,2, K. Kawaguchi^1,2, M. Sato^1,2, M. Suhara³, N. Okamoto^1,2 (1.Fujitsu Ltd. (Japan), 2.Fujitsu Labs. Ltd. (Japan), 3.Tokyo Metropolitan Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:00 〜 10:15 |PDF ダウンロード

[D-6-01] Demonstration of Electromechanical Device Based on 2D Piezoelectric Materials for Nanogenerator Applications

^○N. Higashitarumizu¹, H. Kawamoto¹, K. Nagashio¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:30 〜 10:45 |PDF ダウンロード

[D-6-02] 388 K High Temperature Retention Study of 2D Hetero-stack Based Non-Volatile Memory

^○T. Sasaki¹, T. Taniguchi², K. Watanabe², K. Nagashio¹ (1.Univ. of Tokyo (Japan), 2.NIMS (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:45 〜 11:00 |PDF ダウンロード

[D-6-03] ReS₂ Based High-k Dielectric Stack Charge-Trapping Memory

^○Z.-H. Fan¹, M. Zhang¹, L. Chen¹, Q.-Q. Sun¹, D.W. Zhang¹ (1.Univ. of Fudan (China))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:00 〜 11:15 |PDF ダウンロード

[D-6-04] Electrical characteristics of 2D MoS₂ ferroelectric memory transistor with ferroelectric Hf_1-xZr_xO₂gate structure

^○S. Zhang¹, Y. Liu¹, G. Han¹, J. Zhang¹, Y. Hao¹, X. Wang² (1.Xidian Univ. (China), 2.Nanjing Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:15 〜 11:30 |PDF ダウンロード