[N-6-02] The Impact of Stress and Parasitic RC in Sub-40nm MF and MR nMOSFETs for RF and mm-wave CMOS Applications

^○J.-C. Guo¹, Z.-C. Li¹, J.-M. Lin¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:45 〜 11:00 |PDF ダウンロード

[N-6-03] Plasma Induced Damage on Inter-Metal Dielectric in Nano-meter FinFET Processes

^○C. Su¹ (1.National Tsing Hua Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:00 〜 11:15 |PDF ダウンロード

[N-6-04] Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs

^○A. Makarov¹, B. Kaczer², P. Roussel², A. Chasin², M. Vandemaele², G. Hellings², A.-M. El-Sayed¹, M. Jech¹, T. Grasser¹, D. Linten², S. Tyaginov^1,2 (1.TU Wien (Austria), 2.imec (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:15 〜 11:30 |PDF ダウンロード

[N-6-05] Effects of Variability in Plasma-Induced Damage to Si Substrate on Device Performance and Its Application to Variability Assessment Methodology

^○T. Hamano¹, K. Urabe¹, K. Eriguchi¹ (1.Kyoto Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:30 〜 11:45 |PDF ダウンロード

[N-6-06 (Late News)] A New Structure of High-performance Source/drain Coupling Negative-capacitance FET Featuring Excellent Short-channel Controllability and Near Hysteresis-free

^○F.L. Li², E.R. Hsieh¹, C.H. Chiu¹, C.H. Liu², S. Chung¹, T.P. Chen³, S.A. Huang³, T.J. Chen³, O. Cheng³ (1.NCTU (Taiwan), 2.National Taiwan Normal Univ. (Taiwan), 3.UMC (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:45 〜 12:00 |PDF ダウンロード

[N-7-01 (Invited)] New Horizons of Topological Material Science

^○S. Murakami¹ (1.Tokyo Tech (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 13:00 〜 13:30 |PDF ダウンロード

[N-7-02] Vanishing Skyrmion Hall Effect at the Angular Momentum Compensation Temperature of a Ferrimagnet

^○Y. Hirata¹, D.-H. Kim¹, S.K. Kim^2,3, D.-K. Lee⁴, S.-H. Oh⁵, D.-Y. Kim⁶, T. Nishimura¹, T. Okuno¹, Y. Futakawa⁷, H. Yoshikawa⁷, A. Tsukamoto⁷, Y. Tserkovnyak², Y. Shiota¹, T. Moriyama¹, S.-B. Choe⁶, K.-J. Lee^4,5,8, T. Ono^1,9 (1.Inst. Chemical Res. Kyoto Univ. (Japan), 2.Univ. of California (USA), 3.Univ. of Missouri (USA), 4.Department of Materials Science & Engineering, Korea Univ. (Korea), 5.Department of Nano-Semiconductor and Engineering, Korea Univ. (Korea), 6.Seoul National Univ. (Korea), 7.Nihon Univ. (Japan), 8.KU-KIST Graduate School of Converging Science and Technology, Korea Univ. (Korea), 9.CSRN, Graduate School of Engineering Science, Osaka Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 13:30 〜 13:45 |PDF ダウンロード

[N-7-03 (Late News)] Synthesis and Characterization of Topological Crystalline Insulator SnTe Nanowires

^○Y. Xing¹, L. Hong¹, X. Wang¹, S. Huang¹, H. Xu¹ (1.Peking Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 13:45 〜 14:00 |PDF ダウンロード

[N-7-04] Investigation on the Factors to Determine the Efficiency of Energy Harvesting Method with Multilayered Dielectric Capacitors in Temperature Fluctuating Environment

^○T. Hamaguchi¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 14:00 〜 14:15 |PDF ダウンロード

[N-7-05] Scattered distribution of oxygen vacancies in anatase TiO₂ film; first-principles study on VMCO-memory characteristics

^○T. Oikawa¹, R. Nagasawa¹, M. Araidai², K. Shiraishi², T. Nakayama¹ (1.Chiba Univ. (Japan), 2.Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 14:15 〜 14:30 |PDF ダウンロード