[F-4-01] Atomic Storage Random Access Memory for DRAM-like Applications

〇Yu-Yu Lin¹, Feng-Min Lee¹, Dai-Ying Lee¹, Ming-Hsiu Lee¹, Keh-Chung Wang¹, Chih-Yuan Lu¹ (1. Macronix International Co., Ltd. (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 09:00 〜 09:15 |PDF ダウンロード

[F-4-02] Read Non-Destructive Dynamic Flash Memory (DFM) with Dual and Double Gates

〇Koji Sakui¹, Nozomu Harada¹ (1. Unisantis Electronics Singapore Pte Ltd. (Singapore))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 09:15 〜 09:30 |PDF ダウンロード

[F-4-03] A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect

〇Sang Ho Lee¹, Jin Park¹, So Ra Min¹, Geon Uk Kim¹, Ga Eon Kang¹, Jun Hyeok Heo¹, Young Jun Yoon², Jae Hwa Seo³, Jaewon Jang¹, Jin-Hyuk Bae¹, Sin-Hyung Lee¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea), 2. Korea Atomic Energy Res. Inst. (Korea), 3. Korea Electrotechnology Res. Inst. (Korea))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 09:30 〜 09:45 |PDF ダウンロード

[F-4-04] NAND Memory Composed of Crystalline In-Ga-Zn Oxide FETs with Endurance of over 10¹³ Cycles at 20-ns Write Time without Batch Erase

〇Shoki Miyata¹, Satoru Oshita¹, Hitoshi Kunitake¹, Yuki Okamoto¹, Hiroki Inoue¹, Hiromi Sawai¹, Kunihiro Fukushima¹, Yusuke Komura¹, Takanori Matsuzaki¹, Yoshiyuki Kurokawa¹, Tatsuya Onuki¹, Hajime Kimura¹, Shinya Sasagawa¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 09:45 〜 10:00 |PDF ダウンロード

[F-4-05] Improving Synaptic Functionalities in Chitosan-based Electric-double-layer Transistors via Random Network Polysilicon Nanowire Channel

〇KI-WOONG PARK¹, Won-Ju Cho¹ (1. Univ. of Kwangwoon (Korea))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 10:00 〜 10:15 |PDF ダウンロード

[F-5-01 (Invited)] Scaling Perspectives on 3D NAND Flash

〇Akira Goda¹ (1. Micron (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 10:45 〜 11:15 |PDF ダウンロード

[F-5-02] Analysis of Grain Boundary Effect in GIDL-erase-scheme Vertical CTF Strings for High Stacked CMOS under Array 3-D NAND Flash

〇Moonkyu Song¹, Joe Friedman¹, Sanjay K. Banerjee¹ (1. Univ. of Texas at Austin (United States of America))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 11:15 〜 11:30 |PDF ダウンロード

[F-5-03] Performance Improvement by Applying High-k Materials for 3D NAND Memory Block Oxide with a Lower Thermal Budget

〇Sara Aoki¹, Loan Nguyenhong¹, Muneyuki Otani², Naonori Fujiwara², Genji Nakamura¹ (1. Tokyo Electron Ltd. (Japan), 2. Tokyo Electron Technology Solutions Ltd. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 11:30 〜 11:45 |PDF ダウンロード

[F-5-04] Microscopic Physical Origin of Charge Traps in 3D NAND Flash Memories

〇Fugo Nanataki¹, Jun-ichi Iwata^2,3, Kenta Chokawa⁴, Masaaki Araidai^1,4, Atsushi Oshiyama⁴, Kenji Shiraishi^1,4 (1. Univ. of Nagoya (Japan), 2. Tokyo Inst. of Tech. (Japan), 3. Quemix Inc. (Japan), 4. Inst. of Materials and Systems for Sustainability (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 11:45 〜 12:00 |PDF ダウンロード

[F-6-01] CMOS-compatible Charge-trap Transistors with Engineered Tunnel-barrier for Artificial Synaptic Electronics

〇KI-WOONG PARK¹, Won-Ju Cho¹ (1. Univ. of Kwangwoon (Korea))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 13:30 〜 13:45 |PDF ダウンロード