[G-6-02] Comprehensive Evaluation of Ferroelectric-Metal FET with Stacked-Nanosheet Architecture for Memory and Synapse Applications

〇Heng Li Lin¹, Pin Su¹ (1. Inst. of Electronics, Univ. National Yang Ming Chiao Tung (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 13:45 〜 14:00 |PDF ダウンロード

[G-6-03] Investigation and Mitigation of Write Disturb for 1T FeFET NVM considering Accumulation Effect

〇Po-Yi Lee¹, Yi-Chin Luo¹, Pin Su¹ (1. Inst. of Electronics, Univ. of National Yang Ming Chiao Tung (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 14:00 〜 14:15 |PDF ダウンロード

[G-6-04] Boosting the Erase Efficiency of FDSOI FeFET by the Band-to-Band Tunneling Process

〇Xiaole Jia¹, Chengji Jin¹, Jiajia Chen¹, Lulu Chou², Huan Liu¹, Zhi Gong¹, Yue Peng², Yan Liu², Xiao Yu¹, Genquan Han² (1. Zhejiang Lab (China), 2. Xidian University (China))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 14:15 〜 14:30 |PDF ダウンロード

[G-6-05] Impact of Polarization States Changing on Effective Carrier Mobility of HfZrOx Ferroelectric Field-Effect Transistor

〇Fenning Liu¹, Yue Peng^1,2, Genquan Han^1,2,3, Yan Liu^1,2, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics Xidian Univ. (China), 2. Zhejiang Lab. (China), 3. Hangzhou Institute of Technology, Xidian University (China))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 14:30 〜 14:45 |PDF ダウンロード

[G-6-06] ZrO₂/Si Gate Stack for Antiferroelectric MFIS Capacitors and Antiferroelectric Si n-FETs

〇Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 14:45 〜 15:00 |PDF ダウンロード

[G-6-07 (Late News)] Modeling and Simulation of Antiferroelectric FETs with Oxide Semiconductor Channel Using Half-Loop Hysteresis for Memory Applications

〇Xingyu HUANG¹, Yuki ITOYA¹, Zhuo LI¹, Takuya SARAYA¹, Toshiro HIRAMOTO¹, Masaharu KOBAYASHI¹ (1. Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 15:00 〜 15:15 |PDF ダウンロード

[G-7-01 (Invited)] CMOS Technology Beyond FINFET : Challenges and Opportunities

〇Kai Zhao¹, Julien Frougier¹, Nicolas Loubet¹, Hemanth Jagannathan¹, Brent Anderson¹, Gen Tsutsui¹, Liqiao Qin¹, Jingyun Zhang¹, Shogo Mochizuki¹, Teresa Wu¹, Dechao Guo¹, Huiming Bu¹ (1. IBM (United States of America))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 09:00 〜 09:30 |PDF ダウンロード

[G-7-02] Mobility Enhancement in Extremely-Thin Body (110) SiGe-on-insulator pMOSFETs using Starting Substrates with Thin SiGe Layers

〇Chia-Tsong Chen¹, Xueyang Han¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1. Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 09:30 〜 09:45 |PDF ダウンロード

[G-7-03] Atomic-Layer Deposited Tantalum-based Metal Gates (TaN, TaAlC, TaAlN, TaCoN) for Multiple VTH Modulation

〇Moounsuk Choi¹, Boncheol Ku¹, Yu-Rim Jeon¹, Chulwon Chung¹, Changhwan Choi¹ (1. Hanyang university (Korea))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 09:45 〜 10:00 |PDF ダウンロード

[G-7-04] Mobile-Ionic FETs Based on Amorphous Dielectric with Steep Subthreshold Swing

〇Huan Liu¹, Lulu Chou², Chengji Jin¹, Jiajia Chen¹, Xiao Yu¹, Yan Liu², Genquan Han² (1. Zhejiang Lab (China), 2. Xidian University (China))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 10:00 〜 10:15 |PDF ダウンロード