[E-1-04 (Late News)] HfO₂-based ferroelectric-gated variable-area capacitors

〇Takaaki Miyasako¹, Shingo Yoneda¹, Tadasu Hosokura¹, Masahiko Kimura¹, Eisuke Tokumitsu² (1. Murata Manufacturing Co., Ltd. (Japan), 2. Japan Advanced Institute of Science and Technology (JAIST) (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 12:15 〜 12:30 |PDF ダウンロード

[E-1-05] pH Sensing Enhancement for ALD High-k Membrane By Stack Structures and Post annealing In LAPS

〇Jiun Han Yen¹, Yu Cheng Yang², Nai Chuan Chen^1,2, Chia Ming Yang^1,2,3,4 (1. Inst. of Electro-Optical Engineering, Chang Gung Univ. (Taiwan), 2. Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 3. Department of Nephrology, Chang Gung Memorial Hospital (Taiwan), 4. Department of Materials Engineering, Ming-Chi Univ. Tech. (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 12:30 〜 12:45 |PDF ダウンロード

[E-2-01 (Invited)] In-situ observations of crystal growth behaviors of silicon during solidification

〇Kozo Fujiwara¹ (1. Tohoku Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:00 〜 14:30 |PDF ダウンロード

[E-2-02] Characteristics of FD-SOI-MOSFETs using low-temperature sputtering SiO₂ gate insulator with high pressure water annealing

〇Wenchang Yeh¹, Masato Ohya¹, Yusaku Magari¹ (1. Shimane University (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:30 〜 14:45 |PDF ダウンロード

[E-2-03] A Novel Scheme for Fabrication of T-Gate Polysilicon Thin Film Transistors with Lightly Doped Drain

〇Cheng-Kuei Lee¹, Po-Hsun Yu¹, Chang-Mao Wu¹, Pei-Wen Li¹, Horng-Chih Lin¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:45 〜 15:00 |PDF ダウンロード

[E-2-04] Implantation-Free Vertically Stacked GAA Poly-Si Nanosheet FETs
with Raised Source/Drain

〇Po-Yi Kuo¹, Po-Yang Huang¹, Yu-Cheng Chou¹, Cing-Long Huang¹, Yu-Ming Chiu¹ (1. Department of Electronic Engineering, Feng Chia University (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:00 〜 15:15 |PDF ダウンロード

[E-2-05] First Demonstration of Rectifying Schottky Contact on Polycrystalline P-Type Ge Using ZrN Electrode

〇Kenta Moto^1,2, Kaoru Toko³, Tomonari Takayama¹, Toshifumi Imajo³, Keisuke Yamamoto¹ (1. Kyushu Univ. (Japan), 2. JSPS Research Fellow (Japan), 3. Univ. of Tsukuba (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:15 〜 15:30 |PDF ダウンロード

[E-2-06] Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing

〇Rahmat Hadi Saputro^1,2, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:30 〜 15:45 |PDF ダウンロード

[E-2-07 (Late News)] Real-Time and Atomic-Scale Observation of Local Solid-Phase Epitaxial Growth in Thin Silicon Film

〇Manabu Tezura¹, Takanori Asano¹, Riichiro Takaishi¹, Mitsuhiro Tomita¹, Masumi Saitoh¹, Hiroki Tanaka¹ (1. KIOXIA Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:45 〜 16:00 |PDF ダウンロード

[E-3-01 (Invited)] Electrical Characteristic and Stability of Indium-Oxide Based Nanosheet Transistor with Different Metal Dopants

〇Po-Tsun Liu¹, Zhen-Hao Li¹, Tsung-Che Chiang¹, Hsin-Hua Lee¹, Chun-Hao Tu¹ (1. NYCU (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 16:15 〜 16:45 |PDF ダウンロード