[F-8-02] Multilevel In-Memory-Searching in 3D NAND-Flash Memory

〇Po Hao Tseng¹, Feng Ming Lee¹, Yung Chun Li¹, Yu Hsuan Lin¹, Chih Wei Hu¹, Chih Chang Hsieh¹, Ming Hsiu Lee¹, Kuang Yeu Hsieh¹, Keh Chung Wang¹, Chih Yuan Lu¹ (1. Macronix International Co., Ltd. (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:00 〜 11:15 |PDF ダウンロード

[F-8-03] Split-Gate Ferroelectric Field-Effect Transistor for Reconfigurable Logic-in-Memory

〇Junghyeon Hwang¹, Giuk Kim¹, Sanghun Jeon¹ (1. Korea Advanced Institute of Science and Technology (Korea))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:15 〜 11:30 |PDF ダウンロード

[F-8-04] Current-Divider-Via Assisted Metal-Fuse OTP Memory
in FinFET CMOS Technologies

I-HSIN YANG¹, 〇LI-YU YEH¹, CHRONG-JUNG LIN¹, YA-CHIN KING¹ (1. Univ. of National Tsing Hua (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:30 〜 11:45 |PDF ダウンロード

[F-8-05] The Demonstration of a Physical Unclonable Function (PUF) on a
Resistive-Gate FinFET Memory

M. Y. Lee¹, Y. J. Li², T. C. Kao³, C. F. Huang⁴, Y. S. Wu⁵, Y. H. Ye⁶, M. L. Miu⁷, 〇E Ray Hsieh Hsieh⁸, J. C. Guo⁹, S. S. Chung¹⁰ (1. National Yang Ming Chiao Tung Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. National Yang Ming Chiao Tung Univ. (Taiwan), 4. National Central Univ. (Taiwan), 5. National Central Univ. (Taiwan), 6. National Central Univ. (Taiwan), 7. National Central Univ. (Taiwan), 8. National Central Univ. (Taiwan), 9. National Yang Ming Chiao Tung Univ. (Taiwan), 10. National Yang Ming Chiao Tung Univ. (Taiwan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:45 〜 12:00 |PDF ダウンロード

[F-9-01 (Invited)] Novel high-k insulator deposition on 2D materials for future electronics

〇Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 13:30 〜 14:00 |PDF ダウンロード

[F-9-02] Realization of P-type MoTe2-TFET Via Laser-induced Doping Technique

〇Tianshun Xie¹, Kazuki Fukuda¹, Mengnan Ke¹, Nobuyuki Aoki¹ (1. Chiba University (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:00 〜 14:15 |PDF ダウンロード

[F-9-03] Machine Learning Attack Resilient MoS₂ Fe-FET True Random Number Generator for Hardware Security in IoT: 0.7 pJ/bit Writing Energy, Self-Correction Function, and 1250 bit/s Seed Throughput

〇Yu-Chieh Chien¹, Heng Xiang¹, Jianze Wang¹, Yufei Shi¹, Xuanyao Fong¹, Kah-Wee Ang^1,2 (1. National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng., A*STAR (Singapore))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:15 〜 14:30 |PDF ダウンロード

[F-9-04] Moire Schottky Barriers for Lower Contact Resistances on layered MoS₂

〇John Robertson¹, Zhaofu Zhang¹, Yuzheng Guo² (1. Cambridge University (UK), 2. Wuhan University (China))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:30 〜 14:45 |PDF ダウンロード

[F-9-05 (Invited)] Comparing h-BN and MgO as Tunnel Barriers in scaled Magnetic Tunnel Junctions

〇John Robertson¹ (1. Cambridge Univ. (UK))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:45 〜 15:15 |PDF ダウンロード

[F-10-01 (Invited)] Hybrid 2D/CMOS microchips for memristive technologies

〇Mario Lanza¹ (1. KAUST (Saudi Arabia))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 16:00 〜 16:30 |PDF ダウンロード