[J-2-04] Self-terminating Photo-electrochemical (PEC) Etching for Recessed-gate Fabrication on AlGaN/GaN HEMTs

〇Takuya Togashi¹, Kosaku Ito¹, Taketomo Sato¹ (1. Hokkaido Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:00 〜 15:15 |PDF ダウンロード

[J-2-05] Depletion width in AlGaN/GaN heterostructures under Ohmic-metals

〇Kazuya Uryu^1,2, Toshi-kazu Suzuki¹ (1. Japan Advanced Inst. of Sci. and Tech. (Japan), 2. Advantest Lab. Ltd. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:15 〜 15:30 |PDF ダウンロード

[J-3-01 (Invited)] Terahertz InP/GaAsSb Double Heterojunction Bipolar Transistors

〇Akshay Mahadev Arabhavi¹, Sara Hamzeloui¹, Filippo Ciabattini¹, Olivier Ostinelli¹, Colombo R Bolognesi¹ (1. ETH-Zurich (Switzerland))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 16:15 〜 16:45 |PDF ダウンロード

[J-3-02] Surface-oxide-controlled InGaAs/InAlAs Inverted-type MOS-HEMTs for Sub-THz High-power Amplifiers

〇Shiro Ozaki¹, Yusuke Kumazaki¹, Naoya Okamoto¹, Yasuhiro Nakasha¹, Naoki Hara¹, Toshihiro Ohki¹ (1. Fujitsu Limited (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 16:45 〜 17:00 |PDF ダウンロード

[J-3-03] Single-asymmetric-gated graphene field-effect transistor for terahertz applications

〇Chao Tang¹, Koichi Tamura¹, Akira Satou¹, Victor Ryzhii¹, Taiichi Otsuji¹ (1. Tohoku Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 17:00 〜 17:15 |PDF ダウンロード

[J-3-04] Successful operation of large-area resonant tunneling diodes without heat destruction by introducing a heat-dissipation InP conduction layer

〇Hiroki Tanaka¹, Hidenari Fujikata¹, Feifan Han¹, Akira Ishikawa¹, Safumi Suzuki¹, Masahiro Asada¹ (1. Tokyo Institute of Technology (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 17:15 〜 17:30 |PDF ダウンロード

[J-3-05] Superlattice resonant tunneling diode epitaxial structure for THz applications

〇Michele Cito¹, Brett A. Harrison², Toshikazu Mukai³, Richard A. Hogg¹ (1. University of Glasgow (UK), 2. University of Sheffield (UK), 3. RohmCo. Ltd (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 17:30 〜 17:45 |PDF ダウンロード

[J-4-01 (Invited)] Beyond SiC: What’s Next for Kilovolts Power Devices?

〇Yuhao Zhang¹ (1. Virginia Tech (United States of America))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 09:00 〜 09:30 |PDF ダウンロード

[J-4-02] Effect of Lattice Constraint on Structural Stability and Miscibility of (AlxGa1-x)2O3 Films: A First-Principles Study

〇Shuri Fujita¹, Toru Akiyama¹, Takahiro Kawamura¹, Tomonori Ito¹ (1. Mie Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 09:30 〜 09:45 |PDF ダウンロード

[J-4-03] 2DHG diamond MOSFETs with multi-finger structure for gate width expansion and improved RF characteristics

〇Akira Takahashi¹, Masakazu Arai¹, Yukiko Suzuki¹, Fuga Asai¹, Atsushi Hiraiwa¹, Masaomi Tsuru³, Yutaro Yamaguchi³, Yuji Komatsuzaki³, Ken Kudara³, Hiroshi Kawarada^1,2 (1. Waseda univ Kawarada lab. (Japan), 2. Kagami Memorial Res. (Japan), 3. Mitsubishi Electric Corp. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月28日(水) 09:45 〜 10:00 |PDF ダウンロード