[J-9-02] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1. Univ. of Fukui (Japan), 2. SCIOCS (Japan), 3. Hosei Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:00 〜 14:15 |PDF ダウンロード

[J-9-03] Theoretical Analysis of Tunneling Current in 4H-SiC Schottky Barrier Diodes Under Reverse-biased Condition Based on Complex Band Structure

〇Yutoku Murakami¹, Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:15 〜 14:30 |PDF ダウンロード

[J-9-04] Stability of Monolithically Integrated Power devices for 200V GaN-on-SOI power circuits platform

〇Deepthi Cingu¹, Olga Syshchyk¹, Dirk Wellekens¹, Thibault Cosnier¹, Matteo Borga¹, Urmimala Chatterjee ¹, Benoit Bakeroot², Niels Posthuma¹, Stefaan Decoutere¹ (1. Imec (Belgium), 2. Center for Microsystems Technology (Belgium))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:30 〜 14:45 |PDF ダウンロード

[J-9-05] Vertical Current Temperature Analysis of GaN-on-Si Epitaxy through Analytical Modelling

〇Florian Rigaud-Minet^1,2, Julien Buckley¹, William Vandendaele¹, Stéphane Bécu¹, Matthew Charles¹, Jérôme Biscarrat¹, Romain Gwoziecki¹, Charlotte Gillot¹, Veronique Sousa¹, Hervé Morel², Dominique Planson² (1. CEA, LETI and Univ. Grenoble Alpes (France), 2. Univ. Lyon, INSA Lyon, Ampère Lab. (France))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 14:45 〜 15:00 |PDF ダウンロード

[J-10-01] Evaluating Pillar Capacitor Profile and Material Property Effects on Advanced DRAM Device Performance

〇Ye Xiao Yu¹, Zhong Ming Liu¹, Guo Bao Xiong¹ (1. Changxin corporate (China))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 16:00 〜 16:15 |PDF ダウンロード

[J-10-02] What are the Constraints for 1T-DRAM Operation via Reconfigurable Transistor?

〇Rohit Kumar Nirala¹, Sandeep Semwal², Nivedita Rai³, Abhinav Kranti⁴ (1. Indian Institute of Technology Indore (India), 2. Indian Institute of Technology Indore (India), 3. Indian Institute of Technology Indore (India), 4. Indian Institute of Technology Indore (India))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 16:15 〜 16:30 |PDF ダウンロード

[J-10-03] Evaluate the Impact of Process Variations on Storage Node Contact Area Under Different Etching Models

〇Ye Xiao Yu¹, Zhong Ming Liu¹, Jing Si Cui¹ (1. Changxin corporate (China))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 16:30 〜 16:45 |PDF ダウンロード

[J-10-04] A Loadless 4T SRAM Cell Powered by Gate Leakage Current and Tolerant of Random Dopant Fluctuation and Surface Roughness at Si-SiO₂ Interface

〇Yihan Zhu¹, Takashi Ohsawa¹ (1. Waseda Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 16:45 〜 17:00 |PDF ダウンロード

[J-10-05] Improvement of Cell Characteristics using Controlling the Current Path in 3D NAND Flash

Daewoong Kang¹, 〇Hyojin Park², Inyoung Lee², Hyowon Kang³, Hyoungsoo Kim⁴ (1. Korea National University of Transportation (Korea), 2. Myongji Univ. (Korea), 3. Korea Int'l School (Korea), 4. California State Polytechnics Univ. (United States of America))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 17:00 〜 17:15 |PDF ダウンロード

[J-10-06] Analytical Modeling of Intrinsic Threshold Voltage and Subthreshold Slope for 3D NAND Flash Memory with a Gaussian Doping Profile

〇Amit Kumar¹, Shubham Sahay¹ (1. Indian Inst. of Tech., Kanpur (India))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 17:15 〜 17:30 |PDF ダウンロード