[B-2-01 (Invited)] Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services

〇Mathias Rommel¹, Tobias Erlbacher¹ (1. Fraunhofer Inst. for Integrated Systems and Device Tech. IISB (Germany))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:00 〜 14:30 |PDF ダウンロード

[B-2-02 (Invited)] Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate

〇Kuan Yew Cheong¹, Xiufei Hu², Ming Li², Yingnan Wang², Yan Peng², Gongbin Tang², Mingsheng Xu², Xiangang Xu², Jisheng Han², Xiwei Wang², Bin Li², Yiqiu Yang² (1. Universiti Sains Malaysia (Malaysia), 2. Shandong Univ. (China))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:30 〜 15:00 |PDF ダウンロード

[B-2-03] Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond

〇Mayu Ueda¹, Kyosuke Hayasaka¹, Kyotaro Kanehisa¹, Yasuhiro Takahashi¹, Chiyuki Wakabayashi¹, Taisuke Kageura², Hiroshi Kawarada^1,3 (1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:00 〜 15:15 |PDF ダウンロード

[B-2-04] Importance of dissolving source precursor of Ga(C₅H₇O₂)₃ with HCl in mist CVD for α-Ga₂O₃ growth

〇Rie Yamada¹, Atsushi Sekiguchi¹, Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1. Univ. of Kogakuin (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:15 〜 15:30 |PDF ダウンロード

[B-2-05] First-Principles Study for Self-limiting Growth of GaN Layers on AlN(0001) Surface

〇Haruka Sokudo¹, Toru Akiyama¹, Tomonori Ito¹ (1. Univ. of Mie (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 15:30 〜 15:45 |PDF ダウンロード

[B-3-01 (Invited)] Heteroepitaxy of Group IV Materials for Future Device Application

〇Yuji Yamamoto¹, Wei-Chen Wen¹, Bernd Tillack^1,2 (1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 16:15 〜 16:45 |PDF ダウンロード

[B-3-02] Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe

〇Wei-Chen Wen¹, Bernd Tillack^1,2, Yuji Yamamoto¹ (1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 16:45 〜 17:00 |PDF ダウンロード

[B-3-03] Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge

〇Koki Nozawa¹, Takeshi Nishida¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 17:00 〜 17:15 |PDF ダウンロード

[B-3-04] GeSn nanodots crystal nuclei for solid phase crystallization of poly-SiGeSn

〇Yusei Shirai¹, Hirokazu Tatsuoka¹, Yosuke Shimura^1,2,3 (1. Univ. of Shizuoka (Japan), 2. RIE Shizuoka Univ. (Japan), 3. imec (Belgium))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 17:15 〜 17:30 |PDF ダウンロード

[B-3-05] Molecular beam epitaxy of Si₁_−xSn_x layers with 10%-Sn content on Si₁_−yGe_y buffers

〇Kazuaki Fujimoto¹ (1. Nagoya Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 17:30 〜 17:45 |PDF ダウンロード