[H-8-02] Ohmic current injection into single-crystal carbon-doped h-BN toward two-dimensional power device application

〇Supawan Ngamprapawat¹, Tomonori Nishimura¹, Kenji Watanabe², Takashi Taniguchi², Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan), 2. NIMS (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:15 〜 11:30 |PDF ダウンロード

[H-8-03] PCz sorted SWCNTs-TFT “Electronic Hourglass” and its Recovery Behavior

〇Yang Xu¹, Qinyu Hu^1,2, Yi Zhou^1,2, Jiayi Wang¹, Qi Huang³, Jie Zhao³, Xuelei Liang³, Shengkai Wang^1,2 (1. Inst. of Microelectronics of Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Key Lab. for the Physics and Chemistry of New Device, Peking Univ. (China))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:30 〜 11:45 |PDF ダウンロード

[H-8-04] Accuracy of Equivalent Model in Band-to-band Tunneling Simulation of Semiconductor Nanowires

〇Jo Okada¹, Nobuya Mori¹, Gennady Mil'nikov¹ (1. Osaka Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月29日(木) 11:45 〜 12:00 |PDF ダウンロード

[J-1-01] Shockley–Read–Hall Lifetime in p-type Distributed-Polarization Doped AlGaN Estimated from Current–Voltage Characteristics of p-n⁺ Diode

〇Takeru Kumabe¹, Hirotaka Watanabe², Yoshio Honda², Hiroshi Amano^2,3,4 (1. Dept. of Electronics Nagoya Univ. (Japan), 2. IMaSS Nagoya Univ. (Japan), 3. VBL Nagoya Univ. (Japan), 4. ARC Nagoya Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 11:30 〜 11:45 |PDF ダウンロード

[J-1-02] Characterization of Magnesium Channeled Implantation Layers in GaN(0001)

〇Atsushi Suyama^1,2, Hitoshi Kawanowa², Hideaki Minagawa², Junko Maekawa², Shinji Nagamachi², Masahiko Aoki², Akio Ohta¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Ion Technology Center Co., Ltd. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 11:45 〜 12:00 |PDF ダウンロード

[J-1-03] Effect of Atomic Layer Etching using Nitrogen Plasma on Hall Accumulation at MIS Interface of GaN Polarization-Junction Substrate

〇Takuya Hoshii¹, Shonosuke Kimura¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1. Tokyo Tech (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 12:00 〜 12:15 |PDF ダウンロード

[J-1-04] Tight-Binding Analysis of the Effect of Strain on the Band Structure of GaN

〇Wataru Miyazaki¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 12:15 〜 12:30 |PDF ダウンロード

[J-2-01 (Invited)] Advanced GaN HEMTs for high-efficiency and high-frequency power amplifiers

〇Yusuke Kumazaki¹, Shiro Ozaki¹, Yuichi Minoura¹, Atsushi Yamada¹, Naoya Okamoto¹, Naoki Hara¹, Yasuhiro Nakasha¹, Junji Kotani¹, Masaru Sato¹, Toshihiro Ohki¹ (1. Fujitsu Ltd. (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:00 〜 14:30 |PDF ダウンロード

[J-2-02] Steep Slope GaN MOS-HEMTs with Ferroelectric Semiconductor Heterostructure

〇Jeong Yong Yang¹, Min Jae Yeom¹, Seok Chan Yoon¹, Yeong Je Jeong¹, Chan Ho Lee¹, Sang Hee Kim¹, Seung Yoon Oh¹, GeonWook Yoo¹ (1. Univ. Soongsil (Korea))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:30 〜 14:45 |PDF ダウンロード

[J-2-03] GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers

〇Yoshikaze Ito¹, Seita Tamai¹, Takuya Hoshi², Yasuyuki Miyamoto¹ (1. Tokyo Institute of Technology (Japan), 2. NTT Device Technology Laboratories, NTT Corporation (Japan))

2022 International Conference on Solid State Devices and Materials |2022年9月27日(火) 14:45 〜 15:00 |PDF ダウンロード