[A-0-1] The Materials Challenge

Hans J. QUEISSER (1.Max-Planck-Institut fur Festkorperforschung and、2.SONY Research Center)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-0-2] Past, Present and Future of Si LSI - Reminiscences about a Single MOSFET and Prospects for Multifunctional Si-Subsystems in the 21st Century

Minoru NAGATA (1.Corporate Technology Central Research Laboratory, Hitachi Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-0-3] Recent Progress in Quantized Electronic Structures

James L. MERZ (1.Center for Quantized Electronic Structures QUEST University of California)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-1] Proposal of Adaptive-Learning Neuron Circuits with High Density Synapse Array of Ferroelectric Thin Films

Hiroshi Ishiwara (1.Precision and Intelligence Laboratory, Tokyo Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-2] Electronic Chaos in Silicon Thyristor

Yoh YASUDA、Koichiro HOH (1.Faculty of Engineering, Yokohama National University、2.Faculty of Engineering, the University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-3] High-Performance Buried-Gate MOSFETs with RTO-Grown Ultrathin Gate Oxide Films

Hisashi FUKUDA、Tomiyuki ARAKAWA、Toshiyuki OCHIAI Takahisa HAYASHI、Toshiyuki IWABUCHI (1.Semiconductor Tech. Lab., Oki Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-1] Structure and Characteristics of 0.1μm to sub-0.1μm Devices

Mitsumasa KOYANAGI (1.Research Center for Integrated Systems, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-2] Significance of Charge Sharing in Causing Threshold Voltage Roll-Off in Highly Doped 0.1-μm Si MOSFETs and Its Suppression by Atomic Layer Doping(ALD)

Hiromasa Noda、Kaori Nakamura、Shin'ichiro Kimura (1.Central Research Laboratory, Hitachi Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] Sub 0.1μm nMOSFET Utilizing Narrow Trench Gate and Selective Excimer Laser Annealing (SELA)

Hironori Tsukamoto、Hiroshi Yamamoto、Michitaka Kubota、Thomas Boehm、Takashi Noguchi、Machio Yamagishi (1.Advanced Device Division, ULSI Research and Development Laboratories, Sony Corporation、2.Semiconductors Department, Research Center, Sony Corporation)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-4] Superior Performance of ALD(Atomic Layer Doped) MOSFETs in 0.1-μm Regime

Kaori Nakamura、Hiromasa Noda、Shin'ichiro Kimura (1.Central Research Laboratory, Hitachi Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード