[A-7-4] Ultra-Shallow and Low-Leakage p+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing

Kei Kanemoto, Herzl Aharoni, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University, 3.At leave from the Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-7-5] Effect of Silicon Surface Conditions before Cobalt-Silicidation on Ultra Shallow p+-n Junction Properties

Yoshihiro Sugita, Ken-ichi Goto (1.Fujitsu laboratories Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-7-6] The Formation of High Temperature Stable Co-Silicide from Co1-xTax/Si Systems

Deok-Hyung Lee, Dae-Hong Ko, Hyo-Jick Choi, Ja-Hum Ku, Siyoung Choi, Kazuyuki Fujihara, Ho-Kyu Kang Sang-Ho Oh, Chan-Gyung Park, Hoo-Jeung Lee (1.Department of Ceramic Engineering, Yonsei University, 2.Process Development Team Semiconductor R&D Division Samsung Electronics Co., 3.Pohang University of Science and Technology (POSTECH), 4.Stanford University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-8-1] Current State of Research and Development for Electronic System Integration

Manabu Bonkohara (1.Electronic System Integration Technology Research Depertment Association of Super-Advanced Electronic Technologies (ASET))

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-8-2] Investigation of ALIVH R Substrate for High Frequency Application

Tadashi Nakamura, Shinobu Kokufu, Naoki Okazaki, Yutaka Taguchi, Daizo Andoh (1.Device Engineering Development Center, Matsushita Electric Industrial Co., Ltd., 2.Corporate Components Development Center, Matsushita Electronic Components Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-8-3] Interconnect and Substrate Structure for High Speed Giga-Scale Integration

Akihiro Morimoto, Koji Kotani, Sigetoshi Sugawa, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 2.New Industry Creation Hatchery Center, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-8-4] GHz Signal Propagation through Transmission Line on ULSI Chip

Kazuya Masu, Kazuo Tsubouchi (1.Research Institute of Electrical Communication, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-9-1] Progress of Three-Dimensional Integration Technology

Mitsumasa Koyanagi (1.Department of Machine Intelligence and Systems Engineering, Graduate School of Engineering, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-9-2] Deep Trench Etching in SOI Wafer for Three-Dimensional LSIs

K. W. Lee, T. Nakamura, Y. Yamada, K. T. Park, H. Kurino, M. Koyanagi (1.Dept. of Machine Intelligence and Systems Engineering, Tohoku University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[A-9-3] Fine Pitch CSP Technology Using Au Ball Bumps as External Terminals

Shinsuke Nakajyo, Masanori Onodera, Masamitsu Ikumo, Toshimi Kawahara (1.Advanced Packaging Tech. R&D Dept. LSI Packaging Div., Fujitsu Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF Download