[G-9-6L] Charge transport in single and few layer graphene devices

M. F. Craciun¹、S. Russo^1,2、M. Yamamoto¹、J. B. Oostinga^2,3、A. Morpurgo³、S. Tarucha^1,4 (1.Univ of Tokyo(Japan)、2.Delft Univ of Tech.(The Netherlands)、3.Univ of Geneva(Switzerland)、4.Quantum Spin Information Project, International Cooperative Research Project(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-1] Epitaxial growth and defect generation in in-situ doped high percentage SiGe

A. Reznicek¹、T. N. Adam¹、Z. Zhu¹、K. E. Fogel¹、J. Li¹、L. Tai¹、P. Kulkami¹、J. Kim¹、S. W. Bedell¹、D. K. Sadana¹ (1.IBM)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-2] Study on SiGe Film Properties Fabricated using a Reactive Thermal CVD Method

M. Wakagi¹、I. Suzumura¹、H. Asanuma¹、E. Nishimura¹、M. Matsumura¹、A. Kagatsume¹、J. Hanna² (1.Hitachi, Ltd.(Japan)、2.Tokyo Tech(Japan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-3] Compressively strained Ge channel heterostructures grown by RP-CVD for the next generation CMOS Devices

M. Myronov¹、V. A. Shah¹、A. Dobbie¹、X. C. Liu¹、V. H. Nguyen¹、D. R. Leadley¹ (1.Univ, of Warwick)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-4] Formation of High Ge Concentration Virtual Substrate by Laser Annealing

C. Y. Ong¹、K. L. Pey¹、J. P. Liu²、Q. Wang²、C. P. Wong¹、Z. X. Shen¹、X. C. Wang³、H. Zheng³、C. M. Ng²、L. Chan² (1.Nanyang Technological Univ(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore)、3.Singapore Inst. Of Manufacturing Tech.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-5] Low Temperature (375℃) Metal Induced Lateral Crystallization (MILC) of Si_1-xGe_x (0≤x≤1) using Silicide/Germanide Forming Metals (Ni, Pd and Co)

T. H. Phung¹、R. Xie^1,2、S. Tripathy³、M. Yu²、C. Zhu¹ (1.National Univ. of Singapore(Singapore)、2.Inst. of Microelectronics(Singapore)、3.Inst. Of Materials Res. And Eng.(Singapore))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-6] Low-dislocation-density 50nm Ge Fin Fabrication on Si substrate

C. T. Chung¹、S. C. Huang²、G. L. Luo²、C. H. Ko³、C. H. Wann³、H. Y. Lin³、Z. Y. Han¹、C. C. Cheng¹、C. H. Chien^1,2 (1.National Chiao Tung Univ.(Taiwan)、2.National Nano Device Lab.(Taiwan)、3.TSMC(Taiwan))

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-7] Positioning and numbering Ge quantum dots for effective quantum electrodynamic devices

K. H. Chen¹、C. Y. Chien¹、W. T. Lai¹、P. W. Li¹ (1.National Central Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-8] Grazing Incidence X-ray Diffraction Measurements of Columnar InAs/GaAs Quantum-Dot Structures

K. Watanabe¹、Y. Kimura¹、K. Mukai¹ (1.Yokohama National Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-1-9] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

M. Yoshimura¹、K. Tomioka¹、K. Hiruma¹、S. Hara¹、J. Motohisa¹、T. Fukui¹ (1.Hokkaido Univ.)

2009 International Conference on Solid State Devices and Materials |PDF ダウンロード