[D-4-1] Device characteristics of planar-type In_0.53Ga_0.47As channel band-to-band tunneling MOSFETs

R. Iida¹, S. H. Kim¹, M. Yokoyama¹, N. Taoka¹, S. H. Lee¹, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Design of Thin-Body Double-Gated Vertical-Channel Tunneling Field-Effect Transistors for Ultra-Low Power Logic Circuits

M. C. Sun^1,2, S. W. Kim¹, H. W. Kim¹, G. Kim¹, H. Kim¹, J.H. Lee¹, H. Shin¹, B. G. Park¹ (1.Seoul National Univ., 2.Samsung Electronics Co., Ltd. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] Tunnel Field-Effect Transistor using InAs Nanowire/Si Heterojunction

K. Tomioka^1,2, T. Fukui¹ (1.Hokkaido Univ., 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-4-4] Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

K. L. Low¹, C. Zhan¹, G. Han¹, Y. Yang¹, K.H. Goh¹, P. Guo¹, E.H. Toh², Y.C. Yeo¹ (1.National Univ. of Singapore, 2.GLOBALFOUNDRIES Singapore Pte. Ltd. , Singapore)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] Impact of Random Telegraph Noise Reduction with Buried Channel MOSFET

H. Suzuki¹, R. Kuroda¹, A. Teramoto¹, A. Yonezawa¹, S. Sugawa¹, T. Ohmi¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] Random Trap Fluctuation (RTF) Induced Vth Variability and the Impact on the Reliability of Strained-Silicon CMOS Devices

E. R. Hsieh¹, C. Y. Cheng¹, S. S. Chung¹, C. H. Tsai², R. M. Huang², C. T. Tsai², C. W. Liang² (1.National Chiao Tung Univ., 2.UMC , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] Uniaxial Strain Effect on Flicker Noise and Random Telegraph Noise of SiC Strained nMOSFETs in 40nm Technology

K. L. Yeh¹, C. S. Chang¹, J. C. Guo¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-5-4] Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs

Y. Kamakura^1,2, T. Himukashi¹, H. Tsuji¹, K. Taniguchi¹ (1.Osaka Univ., 2.CREST-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] Advanced Foundry CMOS: From Planar into the Multi-Gate Era

A. Wei¹ (1.GLOBALFOUNDRIES , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[D-6-2] Observation of Hole Velocity Enhancement in Ge-rich Strained SiGe-on-insulator Tri-gate MOSFETs

K. Ikeda¹, M. Oda¹, T. Irisawa¹, Y. Kamimuta¹, Y. Moriyama¹, T. Tezuka¹ (1.MIRAI-Toshiba , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download