[P-6-7] High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation

C. J. Yu¹, C. F. Huang¹, P. J. Chu¹, K. Y. Chen¹, S. S. H. Hsu¹, H. C. Chiu², F. Zhao³ (1.National Tsing Hua Univ., 2.Chang Gung Univ. , Taiwan, 3.Univ. of South Carolina , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-8] Investigation of Plasma-Induced Damages in GaN with Different Processing

C. Y. Lee¹, H. Sekiguchi¹, H. Okada¹, A. Wakahara¹ (1.Toyohashi Univ. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-9] Investigation of the Electrical Behaviors of Ge MOS capacitor on GaAs Substrate

S. H. Tang¹, C. I. Kuo¹, H. D. Trinh¹, E. Y. Chang¹, C. Y. Hsu¹, Y. H. Su¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-10] 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Deep Levels in GaN Buffer Layer

Y. Ikawa¹, T. Hosokawa¹, Y. Kio¹, J. P. Ao¹, Y. Ohno¹ (1.Univ. of Tokushima , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-11] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

U. Honda¹, Y. Yamada¹, Y. Tokuda¹, K. Shiojima² (1.Aichi Inst. of Tech., 2.Univ. of Fukui , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-6-12L] An Al₂O₃/InSb/Si MOS Diode Having an Ultra-Thin InSb Layer

A. Kadoda¹, T. Iwasugi¹, K. Nakatani¹, K. Nakayama¹, M. Mori¹, K. Maezawa¹, E. Miyazaki², T. Mizutani² (1.Univ. of Toyama, 2.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-1] GaN-based LED with embedded air voids array structure

D. S. Kuo¹, S. J. Chang¹, T. K. Ko², W. Y. Yen², S. J. Hon² (1.National Cheng Kung University, 2.Epistar Corp. Ltd. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-2] Investigation of Efficiency Droop for UV-LED with N-type AlGaN Layer

Y. C. Chen¹, C. C. Tu², J. R. Chang¹, P. M. Tu¹, S. P. Chang¹, S. S. Yen¹, H. C. Kuo¹, C. Y. Chang¹ (1.National Chiao Tung Univ., 2.Chung Yuan Christian Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO₂ nanorod-array patterned sapphire template

C. H. Chiu¹, C. C. Lin¹, C. H. Wang¹, S. P. Chang^1,2, C. Y. Jang¹, Z. Y. Li¹, H. C. Yang², H. C. Kuo¹, T. C. Lu¹, S. C. Wang¹ (1.National Chiao Tung Univ., 2.Epistar Co., Ltd. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-7-4] Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughening Using IZO Nano Roughened

P. R. Wang¹, S. J. Wang¹, D. M. Kuo¹, C. H. Kuo¹, H. R. Kuo¹, T. H. Lin¹, P. H. Wang¹ (1.National Cheng Kung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download