[P-6-7] High-Voltage AlGaN/GaN HEMTs on Si Substrate with Implant Isolation

C. J. Yu¹、C. F. Huang¹、P. J. Chu¹、K. Y. Chen¹、S. S. H. Hsu¹、H. C. Chiu²、F. Zhao³ (1.National Tsing Hua Univ.、2.Chang Gung Univ. , Taiwan、3.Univ. of South Carolina , USA)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-8] Investigation of Plasma-Induced Damages in GaN with Different Processing

C. Y. Lee¹、H. Sekiguchi¹、H. Okada¹、A. Wakahara¹ (1.Toyohashi Univ. of Tech. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-9] Investigation of the Electrical Behaviors of Ge MOS capacitor on GaAs Substrate

S. H. Tang¹、C. I. Kuo¹、H. D. Trinh¹、E. Y. Chang¹、C. Y. Hsu¹、Y. H. Su¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-10] 2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Deep Levels in GaN Buffer Layer

Y. Ikawa¹、T. Hosokawa¹、Y. Kio¹、J. P. Ao¹、Y. Ohno¹ (1.Univ. of Tokushima , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-11] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

U. Honda¹、Y. Yamada¹、Y. Tokuda¹、K. Shiojima² (1.Aichi Inst. of Tech.、2.Univ. of Fukui , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-6-12L] An Al₂O₃/InSb/Si MOS Diode Having an Ultra-Thin InSb Layer

A. Kadoda¹、T. Iwasugi¹、K. Nakatani¹、K. Nakayama¹、M. Mori¹、K. Maezawa¹、E. Miyazaki²、T. Mizutani² (1.Univ. of Toyama、2.Nagoya Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-1] GaN-based LED with embedded air voids array structure

D. S. Kuo¹、S. J. Chang¹、T. K. Ko²、W. Y. Yen²、S. J. Hon² (1.National Cheng Kung University、2.Epistar Corp. Ltd. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-2] Investigation of Efficiency Droop for UV-LED with N-type AlGaN Layer

Y. C. Chen¹、C. C. Tu²、J. R. Chang¹、P. M. Tu¹、S. P. Chang¹、S. S. Yen¹、H. C. Kuo¹、C. Y. Chang¹ (1.National Chiao Tung Univ.、2.Chung Yuan Christian Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-3] Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO₂ nanorod-array patterned sapphire template

C. H. Chiu¹、C. C. Lin¹、C. H. Wang¹、S. P. Chang^1,2、C. Y. Jang¹、Z. Y. Li¹、H. C. Yang²、H. C. Kuo¹、T. C. Lu¹、S. C. Wang¹ (1.National Chiao Tung Univ.、2.Epistar Co., Ltd. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P-7-4] Enhanced Light Output of Vertical GaN-Based LEDs with Surface Roughening Using IZO Nano Roughened

P. R. Wang¹、S. J. Wang¹、D. M. Kuo¹、C. H. Kuo¹、H. R. Kuo¹、T. H. Lin¹、P. H. Wang¹ (1.National Cheng Kung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF ダウンロード