[B-6-2] MOS Capacitor Type Si Optical Modulator Integrated with Ge Photodetector and its High Speed Operation with CMOS Driver

J. Fujikata¹, S. Takahashi¹, M. Takahashi², M. Noguchi¹, H. Noguchi³, T. Horikawa², T. Nakamura¹, Y. Arakawa⁴ (1.PETRA, 2.AIST, 3.NEC Corp., 4.Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[B-6-3] A Method Enables Height-Control of Bonding Chip for Edge-Emitting Laser Stacking

M. Aoyagi¹, T.T. Bui¹, L. Ma¹, T. Amano¹, K. Kikuchi¹, M. Mori¹ (1.AIST (Japan))

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[B-6-4] Monolithically Integrated Quantum Dot Electro-Optic Modulator with Semiconductor Optical Amplifier for Short-Reach Optical Communications

N. Yamamoto¹, K. Akahane¹, T. Umezawa¹, T. Kawanishi¹ (1.NICT (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[B-7-1] High-density Silicon Optical Interposer for Inter-chip Interconnect

T. Nakamura¹, Y. Urino¹, Y. Arakawa² (1.PETRA, 2.The Univ. of Tokyo (Japan))

2014 International Conference on Solid State Devices and Materials |PDF Download

[B-7-2] Process Control for Silicon Photonics using 300mm SOI Wafers

F. Boeuf¹, S. Cremer¹, N. Vulliet¹, B. Orlando¹, F. Leverd¹, D. Ristoiu¹, C. Baudot¹, S. Joblot¹, D. Pelissier-Tanon¹, S. Jan¹, H. Petiton¹, A. Mekis², T. Pinguet², L. Verslegers² (1.STMicroelectronics, 2.Luxtera (France))

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[B-7-3] Distribution of Refractive Indices of Si-Wire Waveguides Fabricated on a 300 mm SOI Wafer Using ArF Immersion Lithography

M. Soma¹, Y. Tanushi¹, T. Kita¹, M. Toyama^1,2, M. Seki², N. Yokoyama², M. Ohtsuka², H. Yamada¹ (1.Tohoku Univ., 2.AIST (Japan))

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[C-3-1] Direct Growth of Uniform In-rich InGaN on Si: A New Basic Technology

P. Aseev¹, P.S. Rodriguez¹, V.J. Gomez¹, P. Kumar¹, N.H. Alvi¹, J.M. Mánuel², F.M. Morales², J.J. Jiménez², R. García², E. Calleya¹, R. Nötzel¹ (1.Univ. Politécnica de Madrid, 2.Univ. de Cádiz (Spain))

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[C-3-2] Selective Area Growth of N-face GaN (000-1) Films by Group-III-Source Flow-Rate Modulation Epitaxy

T. Akasaka¹, C.H. Lin¹, H. Yamamoto¹ (1.NTT BRL (Japan))

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[C-3-3] Synthesis of Gallium Nitride Nanostructure by Ammoniating the Electrochemically Deposited Gallium Oxide on Silicon Substrate

N. M. Ghazali¹, M.R. Mahmood², K. Yasui³, A.M. Hashim¹ (1.Univ. Teknologi Malaysia, 2.Univ. Teknologi MARA, 3.Nagaoka Univ. of Tech. (Malaysia))

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[C-3-4] Droplet Epitaxial Growth of 1.55-μm Wavelength InAs Quantum Dots on Metamorphic InAlAs/GaAs(111)A

N. Ha^1,2, T. Mano¹, X. Liu¹, T. Kuroda^1,2, K. Mitsuishi¹, A. Ohtake¹, A. Castellano^1,3, S. Sanguinetti³, T. Noda¹, Y. Sakuma¹, K. Sakoda¹ (1.NIMS, 2.Kyushu Univ., 3.Univ. Milano Bicocca (Japan))

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