^○Ryutaro Noguchi¹, Masatoshi Mitsuhara², Keisuke Yamamoto³, Minoru Nishida², Hiroshi Nakashima³, Toru Hara⁴ (I-Eggs, Kyushu Univ.¹, Dept. of Electrical and Materials Science, Kyushu Univ.², KASTEC, Kyushu Univ.³, NIMS⁴)

11:45 AM - 12:00 PM

[19a-A15-9] Alleviation of Extrinsic State and S-factor for Ge Contact by Amorphous Interlayer and N atom

^○Keisuke Yamamoto¹, Dong Wang², Hiroshi Nakashima¹ (Kyushu Univ. KASTEC¹, Kyushu Univ. I-EggS²)

Oral presentation

[19p-A15-1~12] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Fri. Sep 19, 2014 1:30 PM - 4:45 PM A15 (E306)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 12:00～13:30 （12:00 PM - 1:30 PM）

1:30 PM - 1:45 PM

[19p-A15-1] The Thickness dependence of Ultraviolet Raman Spectra in Extremely Thin Strained SOI

^○Tetsuya Tada¹, Mikiya Hara¹, Vladimir Poborchii¹ (AIST¹)

1:45 PM - 2:00 PM

▲ [19p-A15-2] Study of Heat Conduction in Corrugated Si Nanowires Using Raman mapping

^〇Vladimir Poborchii, Yukinori Morita, Tetsuya Tada (NeRI-AIST)

2:00 PM - 2:15 PM

[19p-A15-3] Electronic properties of B- and/or P-doped Si quantum dot

^○Chioko Kaneta¹ (FUJITSU LABORATORIES Ltd.¹)

2:15 PM - 2:30 PM

[19p-A15-4] Characterization of Electron Emission from Multiply-Stacking P-doped Si Quantum Dots by Atomic Force Microscopy Using a Conducting-Probe

^○Daichi Takeuchi¹, Katsunori Makihara¹, Akio Ohta², Mitsuhisa Ikeda³, Seiichi Miyazaki¹ (Nagoya Univ.¹, Nagoya Univ. VBL², Hiroshima Univ.³)

2:30 PM - 2:45 PM

[19p-A15-5] Study on Electroluminescence from Multiply-Stacking Valency-Controlled Si Quantum Dots

^○Takahisa Yamada¹, Katsunori Makihara¹, Mitsuhisa Ikeda², Seiichi Miyazaki¹ (Nagoya Univ.¹, Hiroshima Univ.²)

2:45 PM - 3:00 PM

[19p-A15-6] Evaluation of radiation effects on semiconductor devices by two-photon absorption process

^○Hiroaki Itsuji^1,2, Daisuke Kobayashi^1,2, Kazuyuki Hirose^1,2 (Univ. Tokyo¹, ISAS/JAXA²)

Break 15:00～15:15 （3:00 PM - 3:15 PM）

3:15 PM - 3:30 PM

[19p-A15-7] Monte Carlo simulation of ion implantation into polycrystalline silicon with different states of crystallinity

^○Yuki Sekino¹, Yoshinori Yokota¹, Sanae Ito¹, Nobutoshi Aoki¹, Kazunari Ishimaru¹, Kiyotaka Miyano² (Toshiba Corp. Semiconductor Storage Products Company¹, NuFlare Technology, Inc.²)

3:30 PM - 3:45 PM

△ [19p-A15-8] Statistical Analysis of the Current Variability in Si Nanowire Transistor Induced by Oxide Trap Charges

^○Akito Suzuki¹, Takefumi Kamioka², Yoshinari Kamakura³, Takanobu Watanabe¹ (Waseda Univ.¹, Toyota Tech. Inst.², Osaka Univ.³)

3:45 PM - 4:00 PM

[19p-A15-9] Effects of Arsenic Doping on Ballistic Phonon Thermal Transport in Silicon Nanowires

^○Junichi Hattori^1,2,3, Shigeyasu Uno^2,3 (AIST¹, Ritsumeikan Univ.², JST, CREST³)

4:00 PM - 4:15 PM

△ [19p-A15-10] Origin of Thermal Conductivity Reduction of Si Nanowire Covered with Oxide Film

^○Tomofumi Zushi^1,3, Kenji Ohmori², Keisaku Yamada², Takanobu Watanabe¹ (Waseda Univ.¹, Univ. of Tsukuba², JSPS Research Fellow³)

4:15 PM - 4:30 PM

[19p-A15-11] Evaluation of Analog and I/O Characteristics in SOI FinFETs with High Thermal Conductivity BOX layer

^○Tsunaki Takahashi^1,2, Ken Uchida^1,2 (Dept. Electronics and Electrical Eng., Keio Univ.¹, CREST, JST²)

4:30 PM - 4:45 PM

[19p-A15-12] Soft-error simulation with a model for radiation-induced increase in local temperature

^○Daisuke Kobayashi^1,2, Taichi Ito¹, Kazuyuki Hirose^1,2 (ISAS/JAXA¹, U. Tokyo²)

Poster presentation

[20a-PA2-1~11] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Sat. Sep 20, 2014 9:30 AM - 11:30 AM PA2 (Gymnasium1)

ポスター掲示時間9:30～11:30(PA2会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[20a-PA2-1] Quantum transport simulation of Si nano-wire MOSFETs with complex cross-sectional channel

^○Takeshi Morimoto¹, Kenji Sasaoka¹, Satofumi Souma¹, Matsuto Ogawa¹ (Kobe Univ.¹)

9:30 AM - 11:30 AM

[20a-PA2-2] Comparison study of various gate controle mechanisms to realize sub 60 mV/decade switching in FET

Tomoya Ishida¹, Kensuke Fukushima¹, Kenji Sasaoka¹, Matsuto Ogawa¹, ^○Satofumi Souma¹ (Kobe Univ.¹)

9:30 AM - 11:30 AM

[20a-PA2-3] Analysis of Heat Escape Paths in FinFETs Using Phonon Monte Carlo Simulation

^○Indra Nur Adisusilo¹, Kentaro Kukita¹, Go Wakimura¹, Yoshinari Kamakura^1,2 (Osaka Univ.¹, JST CREST²)

9:30 AM - 11:30 AM

△ [20a-PA2-4] Extraction of Inversion Layer Mobility using Drain Current Analytical Model for InGaAs n-MOSFETs

^○Akihiro Matsuda¹, Akira Hiroki¹, Yuta Goto¹ (Kyoto Institute of Technology¹)

9:30 AM - 11:30 AM

[20a-PA2-5] Analytical Simulation of Reverse Recovery Characteristics for Body-Short Type Self-bias Channel Diode

^○Daisuke Yamada¹, Tsugutomo Kudoh¹, Fumihiko Sugawara² (Kanagawa Inst.¹, Tohoku Gakuin Univ.²)

9:30 AM - 11:30 AM

△ [20a-PA2-6] Model Parameter Extraction of Germanium Diode for Sound Effect Circuit Design

^○Hirokazu Oda¹, Akira Hiroki¹, Takaya Oyama¹ (Kyoto Institute of Technology¹)

9:30 AM - 11:30 AM

△ [20a-PA2-7] A Macromodeling of Operational Amplifiers for Distortion Circuit Design

^○Yuki Yamatoya¹, Akira Hiroki¹, Takaya Oyama¹ (Kyoto Institute of Technology¹)

9:30 AM - 11:30 AM

[20a-PA2-8] Multi-Component Organic Compound Physisorption Behavior on Silicon Surface in Dry Ambient

Ken Nakagomi¹, Jaeha Choi¹, ^○Hitoshi Habuka¹ (Yokohama National Univ.¹)

9:30 AM - 11:30 AM

△ [20a-PA2-9] Formation mechanism of nanostructures formed in voids during thermal decomposition of SiO〈sub〉2〈/sub〉 layer

^○Shoudai Osanai¹, Taichi Yoshida¹, Yoshiharu Enta¹ (Hirosaki Univ.¹)

9:30 AM - 11:30 AM

[20a-PA2-10] The influence of annealing for Si_0.99C_0.01 S/D n-MOSFET with electron irradiation

^○Masato Hori¹, Masashi Yoneoka¹, Toshiyuki Nakashima², Eddy Simoen³, Cor Claeys³, Isao Tsunoda¹, Kenichiro Takakura¹ (KNCT¹, Chuo Denshi Kogyo Co. LTD.², imec³)

9:30 AM - 11:30 AM

[20a-PA2-11] Interaction between Vacancy Cluster on Si Crystal Surface and Ni Atom Studied by Molecular Simulation

^○Tetsu Kitani¹, Shuichiro Hashimoto¹, Kotaro Mura¹, Kenta Imazu¹, Genki Obana¹, Takefumi Kamioka², Takanobu Watanabe¹ (Waseda Univ.¹, Toyota Technological Inst.²)

Sessions

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-A15-1~9] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-A15-1] Water nozzle design for batch-type silicon wafer wet cleaner

[19a-A15-2] Reduction of nonuniformity caused by wafer guide in ultrasonic cleaning

[19a-A15-3] Substrate orientation dependence on Si surface flattening process by sacrificial oxidation

[19a-A15-4] Influence of Surface Passivation on Lifetime Measurements of High-resistivity CZ Silicon Wafers

[19a-A15-5] Ab initio analysis on the stability of metal atoms in silicon oxide and silicon nitride.

[19a-A15-6] First-principles X-ray photoelectron spectroscopy calculation on the arsenic defects in silicon crystal

[19a-A15-7] Origin of increase of point defect density around metal/Ge interfaces

[19a-A15-8] Electrical Characteristics and Microstructural Analysis of ZrN and HfN/Ge Contacts

[19a-A15-9] Alleviation of Extrinsic State and S-factor for Ge Contact by Amorphous Interlayer and N atom

[19p-A15-1~12] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-A15-1] The Thickness dependence of Ultraviolet Raman Spectra in Extremely Thin Strained SOI

▲ [19p-A15-2] Study of Heat Conduction in Corrugated Si Nanowires Using Raman mapping

[19p-A15-3] Electronic properties of B- and/or P-doped Si quantum dot

[19p-A15-4] Characterization of Electron Emission from Multiply-Stacking P-doped Si Quantum Dots by Atomic Force Microscopy Using a Conducting-Probe

[19p-A15-5] Study on Electroluminescence from Multiply-Stacking Valency-Controlled Si Quantum Dots

[19p-A15-6] Evaluation of radiation effects on semiconductor devices by two-photon absorption process

[19p-A15-7] Monte Carlo simulation of ion implantation into polycrystalline silicon with different states of crystallinity

△ [19p-A15-8] Statistical Analysis of the Current Variability in Si Nanowire Transistor Induced by Oxide Trap Charges

[19p-A15-9] Effects of Arsenic Doping on Ballistic Phonon Thermal Transport in Silicon Nanowires

△ [19p-A15-10] Origin of Thermal Conductivity Reduction of Si Nanowire Covered with Oxide Film

[19p-A15-11] Evaluation of Analog and I/O Characteristics in SOI FinFETs with High Thermal Conductivity BOX layer

[19p-A15-12] Soft-error simulation with a model for radiation-induced increase in local temperature

[20a-PA2-1~11] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[20a-PA2-1] Quantum transport simulation of Si nano-wire MOSFETs with complex cross-sectional channel

[20a-PA2-2] Comparison study of various gate controle mechanisms to realize sub 60 mV/decade switching in FET

[20a-PA2-3] Analysis of Heat Escape Paths in FinFETs Using Phonon Monte Carlo Simulation

△ [20a-PA2-4] Extraction of Inversion Layer Mobility using Drain Current Analytical Model for InGaAs n-MOSFETs

[20a-PA2-5] Analytical Simulation of Reverse Recovery Characteristics for Body-Short Type Self-bias Channel Diode

△ [20a-PA2-6] Model Parameter Extraction of Germanium Diode for Sound Effect Circuit Design

△ [20a-PA2-7] A Macromodeling of Operational Amplifiers for Distortion Circuit Design

[20a-PA2-8] Multi-Component Organic Compound Physisorption Behavior on Silicon Surface in Dry Ambient

△ [20a-PA2-9] Formation mechanism of nanostructures formed in voids during thermal decomposition of SiO〈sub〉2〈/sub〉 layer

[20a-PA2-10] The influence of annealing for Si_0.99C_0.01 S/D n-MOSFET with electron irradiation

[20a-PA2-11] Interaction between Vacancy Cluster on Si Crystal Surface and Ni Atom Studied by Molecular Simulation