Poster presentation

[18p-PB6] 8.4 Plasma etching

Thu. Sep 18, 2014 1:30 PM - 3:30 PM PB6 (Gymnasium2)

ポスター掲示時間13:30～15:30(PB6会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

1:30 PM - 3:30 PM

[18p-PB6-1] Damage Characteristics of AlGaN Surface Etched by CF4 and Ar Plasmas

^○Masahito Niibe¹, Retsuo Kawakami², Yoshitaka Nakano³, Takashi Mukai⁴, Tatsuo Shirahama², Shodai Hirai¹ (Univ. of Hyogo¹, Univ. of Tokushima², Chubu Univ.³, Nichia Corp.⁴)

Oral presentation

[19p-S10-1~18] 8.4 Plasma etching

Fri. Sep 19, 2014 2:15 PM - 7:00 PM S10 (S10)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

2:15 PM - 2:30 PM

[19p-S10-1] [Young Scientist Oral Presentation Award Speech]（15min.）Highly Selective Etching of LaAlSiO_x over Si using Fluorocarbon Gas Chemistry

^○Matsuda Kazuhisa,Sasaki Toshiyuki,Omura Mitsuhiro,Sakai Itsuko,Hayashi Hisataka (Toshiba S&S Co.)

2:30 PM - 2:45 PM

△ [19p-S10-2] Experimental proof of TSV plasma etching device for MinimalFab

^○Taisei Motomura^1,2, Kazunori Takahashi³, Yuji Kasashima¹, Kazuya Kikunaga¹, Fumihiko Uesugi¹, Akira Ando³, Arami Saruwatari¹, Hiroyuki Tanaka², Yoshiki Shimizu^1,2, Shizuka Nakano^1,2, Hisato Ogiso^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (AIST¹, MINIMAL², Tohoku Univ.³)

2:45 PM - 3:00 PM

△ [19p-S10-3] Etching Characteristic of Magnetic VHF Plasma for High Aspect Ratio Silicon-etch

^○Taku Iwase¹, Kenetsu Yokogawa¹, Takao Arase¹, Akira Hirata¹, Masahito Mori¹ (Hitachi High-tech. Corp.¹)

3:00 PM - 3:15 PM

[19p-S10-4] Substrate Temperature Control by Pulsed Plasma with Real-time measurement

^○(DC)Takayoshi Tsutsumi¹, Yusuke Fukunaga¹, Kenji Ishikawa¹, Keigo Takeda¹, Hiroki Kondo¹, Takayuki Ohta², Masafumi Ito², Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹, Meijo Univ.²)

3:15 PM - 3:30 PM

△ [19p-S10-5] Control Etching Profile of Organic Low-k Film with Control Substrate Temperature

^○Yusuke Fukunaga¹, Takayoshi Tsutsumi¹, Keigo Takeda¹, Kenji Ishikawa¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (Nagoya Univ.¹)

3:30 PM - 3:45 PM

[19p-S10-6] Analysis of Surface Roughness during Si Etching in Inductively Coupled Cl₂ Plasmas: Effects of Pulse Bias Etching

^○(D)Nobuya Nakazaki¹, Haruka Matsumoto¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

3:45 PM - 4:00 PM

[19p-S10-7] Precise etch profile control of Si by using multi-step cyclic process.

^○Motohiro Tanaka¹, Yasushi Sonoda¹, Yutaka Kouzuma¹, Masahiro Sumiya¹, Naoki Yasui¹ (Hitachi High-Technologies¹)

4:00 PM - 4:15 PM

[19p-S10-8] Study of process drift mechanism by metal by-product in Front End of Line (FEOL) process

^○Yoshito Kamaji¹, Masahiro Sumiya¹ (Hitachi High-tech¹)

4:15 PM - 4:30 PM

△ [19p-S10-9] Instantaneous generation of many flaked particles caused by micro-arc discharge in mass production plasma etching equipment

^○Yuji Kasashima¹, Taisei Motomura¹, Fumihiko Uesugi¹ (AIST¹)

Break 16:30～16:45 （4:30 PM - 4:45 PM）

4:45 PM - 5:00 PM

[19p-S10-10] Real-time monitoring of defect creation and relaxation during semiconductor processing

^○Shota Nunomura¹, Isao Sakata¹ (AIST¹)

5:00 PM - 5:15 PM

△ [19p-S10-11] Plasma process damage induced by HBr/O₂ plasma with Cl₂ gas

^○Koji Kanomaru¹, Yasuhiro Nojiri¹, Seiji Onoue¹, Tadashi Shimmura¹ (Corporate Munufacturing Engineering Center, Toshiba Corp.¹)

5:15 PM - 5:30 PM

[19p-S10-12] Etching reaction of magnetic materials by CO cluster injection

^○Kazuhiro Karahashi¹, Toshio Seki², Jiro Matsuo², Satoshi Hamaguchi¹ (Osaka Univ.¹, Kyoto Univ.²)

5:30 PM - 5:45 PM

△ [19p-S10-13] Analyses of chemical effects of CH+ and CH3+ on etching processes of transparent conducting films

^○Hu Li¹, Kazuhiro Karahashi¹, Masanaga Fukasawa², Kazunori Nagahata², Tetsuya Tatsumi², Satoshi Hamaguchi¹ (Osaka Univ.¹, Sony Corporation²)

5:45 PM - 6:00 PM

[19p-S10-14] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction

^○Tomohiro Kubota¹, Yoshiyuki Kikuchi^1,2, Xun Gu², Toshihisa Nozawa², Seiji Samukawa^1,3 (IFS, Tohoku Univ.¹, Tokyo Electron Ltd.², WPI-AIMR, Tohoku Univ.³)

6:00 PM - 6:15 PM

[19p-S10-15] Quantitative prediction of neutral beam generation by first-principle calculation

^○Tomohiro Kubota¹, Naoki Watanabe², Shingo Ohtsuka², Takuya Iwasaki², Kohei Ono², Yasuroh Iriye², Seiji Samukawa^1,3 (IFS, Tohoku Univ.¹, Mizuho I&R Inst.², WPI-AIMR, Tohoku Univ.³)

6:15 PM - 6:30 PM

[19p-S10-16] Analysis of Ion Trajectories onto Substrate Surface during Plasma Etching

Nobuya Nakazaki¹, ^○Soma Sonobe¹, Takumi Hatsuse¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

6:30 PM - 6:45 PM

[19p-S10-17] Three-Dimensional Atomic-Scale Cellular Model Analysis for Surface Roughening during Plasma Etching

^○Takumi Hatsuse¹, Soma Sonobe¹, Nobuya Nakazaki¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

6:45 PM - 7:00 PM

[19p-S10-18] Improvement of reaction efficiency on hydrogen plasma induced SiH₄ generation by using a Si source rotation

^○Yuta Kuwaoka¹, Takahiro Yamada^1,2, Hiroaki Kakiuchi^1,2, Kiyoshi Yasutake^1,2, Hiromasa Ohmi^1,2 (hanndaiinkou¹, jst crest²)

Sessions

08. Plasma Electronics » 8.4 Plasma etching

[18p-PB6] 8.4 Plasma etching

[18p-PB6-1] Damage Characteristics of AlGaN Surface Etched by CF4 and Ar Plasmas

[19p-S10-1~18] 8.4 Plasma etching

[19p-S10-1] [Young Scientist Oral Presentation Award Speech]（15min.）Highly Selective Etching of LaAlSiO_x over Si using Fluorocarbon Gas Chemistry

△ [19p-S10-2] Experimental proof of TSV plasma etching device for MinimalFab

△ [19p-S10-3] Etching Characteristic of Magnetic VHF Plasma for High Aspect Ratio Silicon-etch

[19p-S10-4] Substrate Temperature Control by Pulsed Plasma with Real-time measurement

△ [19p-S10-5] Control Etching Profile of Organic Low-k Film with Control Substrate Temperature

[19p-S10-6] Analysis of Surface Roughness during Si Etching in Inductively Coupled Cl₂ Plasmas: Effects of Pulse Bias Etching

[19p-S10-7] Precise etch profile control of Si by using multi-step cyclic process.

[19p-S10-8] Study of process drift mechanism by metal by-product in Front End of Line (FEOL) process

△ [19p-S10-9] Instantaneous generation of many flaked particles caused by micro-arc discharge in mass production plasma etching equipment

[19p-S10-10] Real-time monitoring of defect creation and relaxation during semiconductor processing

△ [19p-S10-11] Plasma process damage induced by HBr/O₂ plasma with Cl₂ gas

[19p-S10-12] Etching reaction of magnetic materials by CO cluster injection

△ [19p-S10-13] Analyses of chemical effects of CH+ and CH3+ on etching processes of transparent conducting films

[19p-S10-14] Mechanism of transition metal etching process using neutral beam oxidation and complex reaction

[19p-S10-15] Quantitative prediction of neutral beam generation by first-principle calculation

[19p-S10-16] Analysis of Ion Trajectories onto Substrate Surface during Plasma Etching

[19p-S10-17] Three-Dimensional Atomic-Scale Cellular Model Analysis for Surface Roughening during Plasma Etching

[19p-S10-18] Improvement of reaction efficiency on hydrogen plasma induced SiH₄ generation by using a Si source rotation

Sessions

08. Plasma Electronics » 8.4 Plasma etching

[18p-PB6] 8.4 Plasma etching

[19p-S10-1~18] 8.4 Plasma etching

△ [19p-S10-2] Experimental proof of TSV plasma etching device for MinimalFab

△ [19p-S10-3] Etching Characteristic of Magnetic VHF Plasma for High Aspect Ratio Silicon-etch

△ [19p-S10-5] Control Etching Profile of Organic Low-k Film with Control Substrate Temperature

△ [19p-S10-9] Instantaneous generation of many flaked particles caused by micro-arc discharge in mass production plasma etching equipment

△ [19p-S10-11] Plasma process damage induced by HBr/O2 plasma with Cl2 gas

△ [19p-S10-13] Analyses of chemical effects of CH+ and CH3+ on etching processes of transparent conducting films

△ [19p-S10-11] Plasma process damage induced by HBr/O₂ plasma with Cl₂ gas