Poster presentation

[17p-PA3-1~7] 3.15 Silicon photonics

Wed. Sep 17, 2014 4:00 PM - 6:00 PM PA3 (Gymnasium1)

ポスター掲示時間16:00～18:00(PA3会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[17p-PA3-1] Optical Waveguide Analysis using Integral Expression for the Effective Refractive Index II

^○Shigeaki Ohke¹, Tokuo Umeda², Yoshio Cho³ (Setsunan Univ.¹, Kitasato Univ.², Quantum Phase Lab.³)

4:00 PM - 6:00 PM

[17p-PA3-2] Low-Loss Optical Interlayer Transition for Vertically-Stacked Optical Circuits Based on Amorphous Silicon

^○Ryohei Takei^1,2, Yuriko Maegami^1,2, Emiko Omoda^1,2, Toshihiro Kamei^1,2, Youichi Sakakibara^1,2, Masahiko Mori^1,2 (AIST¹, PECST²)

4:00 PM - 6:00 PM

[17p-PA3-3] Over 10 GHz Responses of Lateral Si-PIN PDs Fabricated by CMOS Compatible Process

^○Kon Li¹, Kazuaki Maekita¹, Takeo Maruyama¹, Koichi Iiyama¹ (Kanazawa Univ.¹)

4:00 PM - 6:00 PM

△ [17p-PA3-4] Structural optimization of graphene-optical-modulator integrated on silicon waveguide

^○Kaori Warabi¹, Rai Kou^1,2,3, Hidetaka Nishi^2,3, Shinichi Tanabe⁴, Tsuyoshi Yamamoto³, Koji Yamada^2,3, Hirochika Nakajima¹ (Waseda Univ.¹, NTT Nanophotonics Center², NTT Microsystem Integration Labs.³, NTT Photonics Labs.⁴)

4:00 PM - 6:00 PM

[17p-PA3-5] Modulation efficiency estimation of graphene optical modulators based on semiconductor-metal transition

^○Tatsuya Kayoda^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST-CREST²)

4:00 PM - 6:00 PM

[17p-PA3-6] Evaluation of sensitization effect in Er_xYb_yY_2-x-ySiO₅ crystals fabricated by PLD

^○(M1)Fumiya Kondo¹, Hideo Isshiki¹ (Univ. Electro-Communications¹)

4:00 PM - 6:00 PM

[17p-PA3-7] Time-resolved circular-polarized magneto-photoluminescence of Ge

^○Yuhsuke Yasutake^1,2, Hiroyuki Yaguchi³, Susumu Fukatsu¹ (Univ. Tokyo¹, JST PRESTO², Saitama Univ.³)

Oral presentation

[18a-A18-1~9] 3.15 Silicon photonics

Thu. Sep 18, 2014 9:30 AM - 11:45 AM A18 (E310)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

▼ [18a-A18-1] Mid-refractive index GeSi photonics for Telecommunication applications

^〇(P)Papichaya Chaisakul^1,2, Vladyslav Vakarin², Delphine Marris-Morini², Jacopo Frigerio³, Giovanni Isella³, Kazumi Wada¹, Laurent Vivien² (The University of Tokyo¹, University of Paris-Sud², Politecnico di Milano³)

9:45 AM - 10:00 AM

▲ [18a-A18-2] Traveling Plasmon Interaction with Light

^〇(M1C)Deng Yugao, Wada Kazumi (Department of Material Engineering, University of Tokyo)

10:00 AM - 10:15 AM

△ [18a-A18-3] Investigation of Etching Process of III-V Layer toward III-V/SOI Hybrid Devices by using Plasma Activated Bonding

^○Junichi Suzuki¹, Yusuke Hayashi¹, Yuki Kuno¹, JoonHyun Kang¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai^1,2 (Tokyo Inst. Tech., Dept. Electrical and Electronic Engineering¹, QNERC²)

10:15 AM - 10:30 AM

[18a-A18-4] Reduction of N-H bond in SiON waveguide deposited by ECR-PE CVD method

^○Kota Okazaki^1,2, Hidetaka Nishi^1,2, Tai Tsuchizawa^1,2, Tsuyoshi Yamamoto², Koji Yamada^1,2 (NTT NPC¹, NTT MI Labs.²)

10:30 AM - 10:45 AM

[18a-A18-5] A Silicon Nitride Platform by Physical Vapor Deposition for Dense Wavelength Division Multiplexing on Chip

^○Ziyi Zhang¹, Motoki Yako¹, Kan Ju¹, Naoyuki Kawai¹, Tai Tsuchizawa², Koji Yamada², Hiroshi Fukuda², Kazumi Wada¹ (The University of Tokyo¹, NTT Microsystem Integration Laboratoies²)

10:45 AM - 11:00 AM

△ [18a-A18-6] An investigation into second harmonic generation by Si-rich SiNx thin films deposited by RF sputtering over a wide range of Si concentrations

^○(M1)Akihiro Kitao¹, Kenji Imakita¹, Ibuki Kawamura¹, Minoru Fujii¹ (Kobe. Univ¹)

11:00 AM - 11:15 AM

△ [18a-A18-7] a-Si:H Waveguide Optical Isolator on Magneto-Optical Crystal

^○Kengo Miura¹, Takayoshi Hirasawa¹, JoonHuyn Kang¹, Yuya Shoji¹, Yukihiro Okada², Hideki Yokoi², Nobuhiko Nishiyama¹, Shigehisa Arai¹ (Tokyo Tech.¹, Shibaura Inst. Tech.²)

11:15 AM - 11:30 AM

[18a-A18-8] Design of Polarization-Independent Optical Isolator with Amorphous Silicon Waveguide

^○Eiichi Ishida¹, Yuya Shoji¹, Kengo Miura¹, Hideki Yokoi², Tetsuya Mizumoto¹ (Tokyo Tech.¹, Shibaura Inst. Tech.²)

11:30 AM - 11:45 AM

[18a-A18-9] Wide-band Wavelength Tunable Silicon Photonic Laser Diode

^○Tomohiro Kita¹, Rui Tang¹, Hirohito Yamada¹ (Tohoku Univ.¹)

Oral presentation

[18p-A18-1~15] 3.15 Silicon photonics

Thu. Sep 18, 2014 1:15 PM - 5:15 PM A18 (E310)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45～13:15 （11:45 AM - 1:15 PM）

1:15 PM - 1:30 PM

[18p-A18-1] Study of photonic crystal optical switches with magneto-optical material

^○(M1)Kazuki Noda¹, Takuma Sennichi¹, Keita Honzawa¹, Kazuya Okada¹, Yasunori Harada², Yoshiteru Amemiya¹, Tetsuo Tabei¹, Shin Yokoyama¹ (Res. Inst. for Nanodevice and Bio Syst.¹, TDK Corporation.²)

1:30 PM - 1:45 PM

[18p-A18-2] Study of optical switches combined Si ring resonator with magneto-optical material Bi₃Fe₅O₁₂

^○Kazuya Okada¹, Kazuki Noda¹, Yoshiteru Amemiya¹, Tetuo Tabei¹, Shin Yokoyama¹ (Res. Inst. for Nanodevice and Bio Syst., Hiroshima Univ.¹)

1:45 PM - 2:00 PM

[18p-A18-3] Improvement of Slot Ring Resonator Optical Device with Beam Structures

^○Yoshiteru Amemiya¹, Amrita Kumar Sana¹, Kazuki Okada¹, Keita Honzawa¹, kazuki noda¹, takuma sennichi¹, Masataka Fukuyama¹, Shin Yokoyama¹ (Hiroshima Univ.¹)

2:00 PM - 2:15 PM

[18p-A18-4] Enhancement of phase shift in Si photonic crystal waveguide modulator by optimized doping

^○Yosuke Terada¹, Hiroyuki Ito¹, Toshihiko Baba¹ (Yokohama Nat'l Univ.¹)

2:15 PM - 2:30 PM

[18p-A18-5] 25 Gbps Operation in 90 μm–Long Phase Shifter Mach-Zehnder Modulator Using High-Group-Index Silica-Cladded Si Photonic Crystal Waveguides

^○Yosuke Hinakura¹, Takuya Tamura¹, Yosuke Terada¹, Hiroyuki Ito¹, Toshihiko Baba¹ (Yokohama Nat'l Univ.¹)

2:30 PM - 2:45 PM

[18p-A18-6] On-chip WDM transmission with Si photonic crystal optical modulators

^○Hiroyuki Ito¹, Yosuke Terada¹, Norihiro Ishikura¹, Toshihiko Baba¹ (Yokohama National Univ.¹)

2:45 PM - 3:00 PM

[18p-A18-7] Low-αV_πL 25-Gb/s Silicon Modulator Based on Forward-Biased PIN Diodes

^○Takeshi Baba¹, Suguru Akiyama¹, Masahiko Imai¹, Tsuyoshi Horikawa², Tatsuya Usuki¹ (PETRA¹, AIST²)

3:00 PM - 3:15 PM

[18p-A18-8] Silicon optical modulator fabricated by using immersion ArF lithography

Suguru Akiyama¹, Takeshi Baba¹, Masahiko Imai¹, Masahiko Mori¹, ^○Tatsuya Usuki¹ (PETRA¹)

3:15 PM - 3:30 PM

[18p-A18-9] Theoretical analysis of silicon microring resonator loaded Mach-Zehnder modulatorwith interleaved PN junctions

^○Hiroyuki Honma¹, Rajdeep Gautam¹, Taro Arakawa¹, Yasuo Kokubun¹ (Yokohama National Univ¹)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[18p-A18-10] MOS Capacitor Type Si Optical Modulator Integrated with Ge Photodetector, and its High Speed Operation with CMOS Driver

^○Junichi Fujikata¹, Shigeki Takahashi¹, Masashi Takahashi², Masataka Noguchi¹, Hidemi Noguchi³, Mitsuru Kurihara¹, Tsuyoshi Horikawa², Takahiro Nakamura¹, Yasuhiko Arakawa⁴ (PETRA¹, AIST², NEC³, Univ. of Tokyo⁴)

4:00 PM - 4:15 PM

[18p-A18-11] High-performance Ge-on-Si pin photodiodes using a laser annealing process

^○Sho Nagatomo¹, Yuta Kawamata¹, Yusaku Izawa², Satohiko Hoshino³, Yasuhiko Ishikawa¹ (Univ.Tokyo¹, Tokyo Electron Miyagi², Tokyo Electron Ltd.³)

4:15 PM - 4:30 PM

[18p-A18-12] Observation of low dark current of Ge layer on Si(001) using ultrathin Ge seed layer

^○Shigekazu Okumura¹, Takasi Simoyama¹, Hideki Ono¹, Makoto Miura¹, Masataka Noguchi¹, Junichi Fujikata¹, Tohru Mogami¹, Tsuyoshi Horikawa¹, Yu Tanaka¹, Ken Morito¹ (PETRA¹)

4:30 PM - 4:45 PM

[18p-A18-13] Photoluminescence lifetime measurement of germanium directly grown on silicon

^○Satoshi Kako^1,2, Katsuya Oda^3,4,5, Kazuki Tani^3,4,5, Tatemi Ido^3,4,5, Yasuhiko Arakawa^1,2,4 (IIS,Univ. of Tokyo¹, NanoQuine, Univ. of Tokyo², PETRA³, PECST⁴, Hitachi, Ltd⁵)

4:45 PM - 5:00 PM

▲ [18p-A18-14] Ge-on-Insulator Fabrication by Smartcut Technology for Ge CMOS Photonics Platform

^○(D)Jian Kang^1,2, Xiao Yu^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (Tokyo Univ.¹, JST-CREST²)

5:00 PM - 5:15 PM

[18p-A18-15] Evaluation of the Fermi level shift at metal/graphene interfaces for improving the performance of graphene photodetector

^○(M1)Kazuya Sasaki^1,2, Mitsuru Takenaka^1,2, Shinichi Takagi^1,2 (The University of Tokyo¹, JST-CREST²)

Oral presentation

[19a-A18-1~9] 3.15 Silicon photonics

Fri. Sep 19, 2014 9:30 AM - 11:45 AM A18 (E310)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[19a-A18-1] A Low Coupling Loss Triplex SSC for A Hybrid Integrated Light Source on A Si Platform Using A Quantum Dot Laser

^○Nobuaki Hatori¹, Takanori Shimizu¹, Makoto Okano^1,2, Masashige Ishizaka¹, Tsuyoshi Yamamoto¹, Yutaka Urino¹, Masahiko Mori^1,2, Takahiro Nakamura¹, Yasuhiko Arakawa³ (PETRA¹, AIST², Univ. of Tokyo³)

9:45 AM - 10:00 AM

[19a-A18-2] Polarization-independent Spot Size Convertors for Si-wire Waveguides

^○Satoshi Miyamura¹, Yutaka Okabe¹, Hideki Ono¹, Akio Kamei¹, Masatoshi Tokushima¹, Tsuyoshi Horikawa¹, Hironori Sasaki¹ (PETRA¹)

10:00 AM - 10:15 AM

[19a-A18-3] Three-dimensional-SiOx-waveguide Photonic Lantern for Space-division Multiplexing

^○Tatsurou Hiraki^1,2, Tai Tsuchizawa^1,2, Hidetaka Nishi^1,2, Mitsuo Usui², Tsuyoshi Yamamoto², Koji Yamada^1,2 (NTT NPC¹, NTT MI Labs.²)

10:15 AM - 10:30 AM

[19a-A18-4] Grating coupler with nano through-hole array

^○Hiroshi Tanooka¹, Shu Hirano¹, Tomohiro Kita¹, Hirohito Yamada¹ (Tohoku Univ.¹)

10:30 AM - 10:45 AM

△ [19a-A18-5] Apodized Grating Couplers with Circular Through-holes between Multilayer Waveguides with Metal Mirrors

^○Yuki Kuno¹, JoonHyun Kang¹, Yusuke Hayashi¹, Junichi Suzuki¹, Tomohiro Amemiya², Nobuhiko Nishiyama¹, Shigehisa Arai² (Tokyo Tech. Dept. of Elect. and Electron. Engrg¹, Tokyo Tech. Quantum Nanoelectron. Res. Center²)

10:45 AM - 11:00 AM

[19a-A18-6] Polarization independent coupler using different order modes

^○Yosuke Onawa¹, Hideaki Okayama¹, Hiroki Yaegashi¹, Hironori Sasaki¹ (Oki Electric Industry Co.,ltd.¹)

11:00 AM - 11:15 AM

[19a-A18-7] Loss Improvement of Vertically-Curved Silicon Waveguide by Annealing

^○(M2)Syougo Tajima^1,2, Tomoya Yoshida², Takashi Nishi², Ryohei Takei², Emiko Omoda², Masayoshi Nagao², Noboru Miura¹, Masahiko Mori², Youichi Sakakibara² (Meiji Univ.¹, AIST²)

11:15 AM - 11:30 AM

△ [19a-A18-8] Core Size of Si-wire Waveguide for Reducing Device Characteristic Distribution

^○Munetoshi Soma¹, Tomohiro Kita¹, Munehiro Toyama^1,2, Miyoshi Seki², Nobuyuki Yokoyama², Minoru Ohtsuka², Hirohito Yamada¹ (Tohoku Univ.¹, AIST²)

11:30 AM - 11:45 AM

[19a-A18-9] Photonic Circuit with a SOI Slab Waveguide

^○Fuyumi Hemmi¹, Tomohiro Kita², Hirohito Yamada² (School of Eng., Tohoku Univ.¹, Grad. School of Eng., Tohoku Univ.²)

Sessions

03. Optics and Photonics » 3.15 Silicon photonics

[17p-PA3-1~7] 3.15 Silicon photonics

△ [17p-PA3-4] Structural optimization of graphene-optical-modulator integrated on silicon waveguide

[18a-A18-1~9] 3.15 Silicon photonics

▼ [18a-A18-1] Mid-refractive index GeSi photonics for Telecommunication applications

▲ [18a-A18-2] Traveling Plasmon Interaction with Light

△ [18a-A18-3] Investigation of Etching Process of III-V Layer toward III-V/SOI Hybrid Devices by using Plasma Activated Bonding

△ [18a-A18-6] An investigation into second harmonic generation by Si-rich SiNx thin films deposited by RF sputtering over a wide range of Si concentrations

△ [18a-A18-7] a-Si:H Waveguide Optical Isolator on Magneto-Optical Crystal

[18p-A18-1~15] 3.15 Silicon photonics

▲ [18p-A18-14] Ge-on-Insulator Fabrication by Smartcut Technology for Ge CMOS Photonics Platform

[19a-A18-1~9] 3.15 Silicon photonics

△ [19a-A18-5] Apodized Grating Couplers with Circular Through-holes between Multilayer Waveguides with Metal Mirrors

△ [19a-A18-8] Core Size of Si-wire Waveguide for Reducing Device Characteristic Distribution