Oral presentation

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 2:00 PM - 6:45 PM A27 (N302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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2:00 PM - 2:15 PM

[19p-A27-1] Fabrication and characterization of BaSi₂ epitaxial films on Ge(111) substrate by MBE

^○Ryota Takabe¹, Masakazu Baba¹, Weijie Du¹, Kaoru Toko¹, Kosuke Hara², Noritaka Usami^2,3, Takashi Suemasu^1,3 (Univ. Tsukuba¹, Nagoya Univ.², JST-CREST³)

2:15 PM - 2:30 PM

[19p-A27-2] Observation of a BaSi2 pn junction on Si(111) by Kelvin probe force microscopy

^○Daichi Tsukahara¹, Masakazu Baba¹, Kaoru Toko¹, Takashi Kimura², Kentaro Watanabe^1,2, Takashi Sekiguchi², Takashi Suemasu^1,3 (Univ. Tsukuba¹, NIMS², JST-CREST³)

2:30 PM - 2:45 PM

[19p-A27-3] Relation between passivation and defect levels on the surface of n-BaSi₂ epitaxial films on Si(111)

^○Hiroki Takeuchi¹, Weijie Du¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Tsukuba Univ.¹, JST-CREST²)

2:45 PM - 3:00 PM

[19p-A27-4] Activation process and electrical characterization of B-doped p-type BaSi₂ epilayers

^○Ning Zhang¹, Daiki Takeuchi¹, Weijie Du¹, Ryota Takabe¹, Masakazu Baba¹, Daichi Tsukahara¹, Kaoru Toko¹, Takashi Suemasu^1,2 (Univ. of Tsukuba¹, CREST JST²)

3:00 PM - 3:15 PM

▲ [19p-A27-5] Fabrication of BaSi₂ films by RF sputtering on a heated glass substrate with pre-deposition Si layer

^○Nurul Amal AbdulLatiff¹, Seiya Yokoyama¹, Masami Mesuda², Hideto Kuramochi², Kaoru Toko¹, Takashi Suemasu^1,3 (Inst. of Appl. Phys. Univ. Tsukuba¹, Tosoh Corporation², JST-CREST³)

3:15 PM - 3:30 PM

△ [19p-A27-6] Formation of Thick BaSi₂ Evaporated Films by Use of Silicon Supply Layer

^○Kosuke Hara^1,2, Yoshihiko Nakagawa¹, Takashi Suemasu^2,3, Noritaka Usami^1,2 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

Break 15:30～15:45 （3:30 PM - 3:45 PM）

3:45 PM - 4:00 PM

[19p-A27-7] Evaluation of Carrier Lifetime of BaSi₂ Thin Films Grown by Vacuum Evaporation

^○(M1)Yoshihiko Nakagawa¹, Kosuke Hara^1,2, Takashi Suemasu^2,3, Noritaka Usami^1,2 (Nagoya Univ.¹, JST-CREST², Univ. of Tsukuba³)

4:00 PM - 4:15 PM

[19p-A27-8] Energetic Evaluation of the Possibility of Interstitial Doping of BaSi2

^○Yoji Imai^1,2, Mitsugu Sohma¹, Takashi Suemasu² (AIST¹, Univ. Tsukuba²)

4:15 PM - 4:30 PM

[19p-A27-9] Theoretical study of impurity atom diffusion in BaSi2

^○Yuki Osuga¹, Takashi Nakayama¹ (Chiba Univ.¹)

4:30 PM - 4:45 PM

[19p-A27-10] First-principles studies on (Sr,Ba)(Si,Ge)2 for thin-film solar cell applications

^○Naoto Umezawa¹, Mukesh Kumar¹, Motoharu Imai¹ (NIMS¹)

4:45 PM - 5:00 PM

[19p-A27-11] Oxidation behavior of β-FeSi2/Si Nano-Composite Phases by IR absorption measurements

^○Kosuke Morita¹, Tatsuya Nakamura¹, Hiroyuki Kobayashi¹, Tatsumi Takahide¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (Kyutech.CSE¹, JAEA ASRC²)

5:00 PM - 5:15 PM

△ [19p-A27-12] Photoluminescence Property of Nano-Composite Phases of β-FeSi₂ Nanocrystals Embedded in SiO₂

^○Takahide Tatsumi¹, Tatsuya Nakamura¹, Kosuke Morita¹, Hiroyuki Kobayashi¹, Kazumasa Narumi², Yoshihito Maeda^1,2 (Kyutech. CSE¹, JAEA ASRC²)

Break 17:15～17:30 （5:15 PM - 5:30 PM）

5:30 PM - 5:45 PM

[19p-A27-13] Polarized Raman spectra of the β-FeSi₂(100)//Si(001) epitaxial film

^○Haruki Yamaguchi¹, Hiroaki Tsukamoto¹, Tetsu Hattori¹, Takahiko Higashi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

5:45 PM - 6:00 PM

[19p-A27-14] Correlation between crystal defects and residual carrier density in β-FeSi₂ polycrystalline films

^○Takahiko Higashi¹, Tetsu Hattori¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

6:00 PM - 6:15 PM

[19p-A27-15] Carrier density dependence of I-V curves in n-β-FeSi₂ polycrystalline/p-Si heterojunctions

^○Tetsu Hattori¹, Takahiko Higashi¹, Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

6:15 PM - 6:30 PM

[19p-A27-16] Residual oxygen atoms in β-FeSi₂ with SiN capped annealing

^○Takafumi Kato¹, Hitoshi Wakabayashi², Akito Sasaki², Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹ (Tokyo Tech. FRC¹, Tokyo Tech IGSSE²)

6:30 PM - 6:45 PM

[19p-A27-17] Influence of solvents of ball-milling in the formation of β-FeSi₂by electric discharge plasma activated sintering

^○(M2)Ikki Matsumoto¹, Hiroshi Katsumata¹, Takasi Takahashi², Hiroshi Souma², Izumi Azumaya², Masaaki Ishiyama² (Meiji Univ¹, Elenix, Inc.²)

Poster presentation

[19a-PB4-1~9] 14.1 Physical properties of exploratory materials

Fri. Sep 19, 2014 9:30 AM - 11:30 AM PB4 (Gymnasium2)

ポスター掲示時間9:30～11:30(PB4会場)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PB4-1] Effects of carbon doping to n-type β-FeSi2 on electric properties of n-type β-FeSi2/p-type Si heterojunction diodes

^○(M2)Motoki Takahara¹, Suguru Funasaki¹, Mostafa Tarek¹, Ryuji Baba¹, Nathaporn Promros², Shaban Mahmoud³, Aki Tominaga¹, Tsuyoshi Yoshitake¹ (Kyushu Univ.¹, King Mongkut's Inst. Tech. Ladkrabang², South Valley Univ.³)

9:30 AM - 11:30 AM

[19a-PB4-2] Fabrication of spin valve junctions based on Fe₃Si/FeSi₂/Fe₃Si artificial films

^○Yuki Asai¹, Kenichiro Sakai^1,2, Kazuya Ishibashi¹, Kaoru Takeda³, Tsuyoshi Yoshitake¹ (Dept. Appl. Sci. Electr. Mat. Kyushu Univ.¹, Kurume Nat. Coll of Tech.², Fukuoka Inst. Tech.³)

9:30 AM - 11:30 AM

[19a-PB4-3] Microstructure analysis of β-FeSi2 films fabricated on Ag coated Si(110) substrate

^○(M2)Kouhei Hayashi¹, Masaru Itakura¹, Kensuke Akiyama² (Kyushu Univ.¹, Kanagawa Indus. Tech. Cntr.²)

9:30 AM - 11:30 AM

[19a-PB4-4] Effects of source materials on fabrication of β-FeSi₂ thin films by vacuum deposition

^○Haruya Kobayashi¹, Yuiko Watahiki¹, Keisuke Sato¹, Kanichiro Nakaoka¹, Yoshiaki Hara¹ (Ibaraki NCT¹)

9:30 AM - 11:30 AM

[19a-PB4-5] Temperature and excitation power dependences of Franz-Keldysh oscillations in the β-FeSi₂ UP⁺ structure

^○Hiroaki Tsukamoto¹, Haruki Yamaguchi¹, Tetsu Hattori¹, Takahiko Higashi¹, Yoshikazu Terai¹ (Kagoshima Univ.¹)

9:30 AM - 11:30 AM

[19a-PB4-6] Effects of Bi and Sb doping on thermoelectric property in melt grown Mg₂Si.

^○Tsubasa Otsubo¹, Hideaki Otake¹, Haruhiko Udono¹ (Graduate School of Sci. & Eng., Ibaraki Univ¹)

9:30 AM - 11:30 AM

△ [19a-PB4-7] Distribution of Sb-impurity in Mg₂Si grown by the convenient-melt growth method

^○Hiroshi Okazaki¹, Haruhiko Udono¹ (Graduate School of Sci.&Eng., Ibaraki Univ.¹)

9:30 AM - 11:30 AM

[19a-PB4-8] Fabrication of highly oriented Er₂O₃ thin films by ion beam sputter deposition method

^○Masaya Fujita^1,2, Kenji Yamaguchi², Hidehito Asaoka², Wei Mao³, Takumi Chikada⁴, Akihiro Suzuki³, Takayuki Terai³ (Ibaraki Univ.¹, Japan Atomic Energy Agency², Tokyo Univ.³, Shizuoka Univ.⁴)

9:30 AM - 11:30 AM

[19a-PB4-9] Effect of Annealing on Structural Properties of Silicon Implanted by Xenon-ion

^○Hitoe Habuchi¹, Shiori Fujita¹, Tamio Iida¹, Fumitaka Ohashi², Takayuki Ban², Tetsuji Kume², Shuichi Nonomura² (Gifu. Natl. Coll. Technol.¹, Gifu Univ.²)

Oral presentation

[20a-A27-1~10] 14.1 Physical properties of exploratory materials

Sat. Sep 20, 2014 9:00 AM - 11:45 AM A27 (N302)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [20a-A27-1] Evaluation of Ag thermal diffusion depth in Mg₂Si crystals by sputter etching

^○Nobuhiko Hori¹, Fumitaka Esaka², Haruhiko Udono¹ (Graduate School of Sci. & Eng., Ibaraki Univ.¹, JAEA²)

9:15 AM - 9:30 AM

[20a-A27-2] Solid-phase synthesis of Mg₂Si film by post-anneal of co-deposited Mg/Si on sapphire

^○Yuta Takagi¹, Yue Zhang¹, Kazuhiro Kunitake¹, Takashi Ikehata¹, Haruhiko Udono¹, Naoyuki Sato¹ (Ibaraki Univ.¹)

9:30 AM - 9:45 AM

[20a-A27-3] Effects of Bi and Sb doping on lattice thermal conductivity in melt grown Mg₂Si

^○Hideaki Otake¹, Tsubasa Otsubo¹, Takuma Shiga², Junichiro Shiomi², Haruhiko Udono¹ (Ibaraki Univ.¹, The Univ. of Tokyo²)

9:45 AM - 10:00 AM

[20a-A27-4] Influence of heat treatment atmosphere during the solid phase growth of Mg2Si films on their film properties

^○(M2)Tetsuya Hashimoto¹, Hideki Hara¹, Hiroshi Katsumata¹ (Meiji Univ.¹)

10:00 AM - 10:15 AM

[20a-A27-5] Cross-sectional TEM observation of Ni-Mg₂Si interface prepared by SPS method

^○Hiroharu Sugawara¹, Yuki Yamazaki¹, Shin'ichi Nakamura², Shigeyuki Nakamura³, Yoshihisa Mori⁴, Ken'ichi Takarabe⁴ (Tokyo Metro. Univ.¹, Aoyama Gakuin Univ.², Tsuyama Nat. Coll. Tech.³, Okayama Univ. Sci.⁴)

10:15 AM - 10:30 AM

[20a-A27-6] Mg₂Si at high temperatures and high pressures

^○Motoharu Imai¹, Yukihiro Isoda¹, Masashi Hasegawa², Kenji Nishida² (NIMS¹, Nagoya Univ.²)

Break 10:30～10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[20a-A27-7] Synthesis of ternary Si Clathrate K₈Al_xSi_46-x

Shiva Kumar Singh¹, ^○Motoharu Imai¹ (NIMS¹)

11:00 AM - 11:15 AM

[20a-A27-8] Raman Scattering of Mixed-Crystals which is C-rare earth stricture

^○Yutaro Chibana¹, Akio Yamanaka¹ (CIST¹)

11:15 AM - 11:30 AM

[20a-A27-9] Ohmic contacts on diamond semiconductor devices

^○(D)Takaaki Ueda¹, Ryo Maezono¹ (JAIST¹)

11:30 AM - 11:45 AM

[20a-A27-10] A Method for Evaluation of Adhesion Strength of Structures on Actual Chip

^○Tetsu Negishi¹, Mamoru Terai¹, Takashi Nishimura¹ (Mitsubishi Electric Corp.¹)

Sessions

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-A27-1~17] 14.1 Physical properties of exploratory materials

▲ [19p-A27-5] Fabrication of BaSi2 films by RF sputtering on a heated glass substrate with pre-deposition Si layer

△ [19p-A27-6] Formation of Thick BaSi2 Evaporated Films by Use of Silicon Supply Layer

△ [19p-A27-12] Photoluminescence Property of Nano-Composite Phases of β-FeSi2 Nanocrystals Embedded in SiO2

[19a-PB4-1~9] 14.1 Physical properties of exploratory materials

△ [19a-PB4-7] Distribution of Sb-impurity in Mg2Si grown by the convenient-melt growth method

[20a-A27-1~10] 14.1 Physical properties of exploratory materials

△ [20a-A27-1] Evaluation of Ag thermal diffusion depth in Mg2Si crystals by sputter etching

▲ [19p-A27-5] Fabrication of BaSi₂ films by RF sputtering on a heated glass substrate with pre-deposition Si layer

△ [19p-A27-6] Formation of Thick BaSi₂ Evaporated Films by Use of Silicon Supply Layer

△ [19p-A27-12] Photoluminescence Property of Nano-Composite Phases of β-FeSi₂ Nanocrystals Embedded in SiO₂

△ [19a-PB4-7] Distribution of Sb-impurity in Mg₂Si grown by the convenient-melt growth method

△ [20a-A27-1] Evaluation of Ag thermal diffusion depth in Mg₂Si crystals by sputter etching