Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19p-S423-1~17] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sat. Mar 19, 2016 1:45 PM - 6:15 PM S423 (S4)

Tomoji Nakamura(Fujitsu Lab.), Kuniyuki Kakushima(Titech)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:45 PM - 2:00 PM

△ [19p-S423-1] Fabrication of metal-insulator-metal subwavelength grating using nanoimprint technique

〇Masato Mitsudome¹, Hiroaki Honma^1,2, Shintaro Itoh³, Makoto Ishida¹, Kazuaki Sawada¹, Kazuhiro Takahashi¹ (1.Toyohashi Tech. Univ., 2.JSPS Research Fellow DC2, 3.Nagoya Univ.)

2:00 PM - 2:15 PM

[19p-S423-2] Development of Water Plasma Asher Equipment for Minimal FAB.

〇(M1)TAKUYA KITANO¹, TAKUYA ITO¹, HIROAKI SUZUKI¹, TATSUO ISHIJIMA¹, YASUNORI TANAKA¹, YOSHIHIKO UESHUGI¹, SOMMAWAN KHUMPUANG², SHIRO HARA² (1.Kanazawa Univ., 2.AIST)

2:15 PM - 2:30 PM

△ [19p-S423-3] Forming Seed Film by Electroless Plating for Electrophoretic Si Via Filling

〇Kohei NITTA¹, Ryo TAKIGAWA¹, Akihiro IKEDA¹, Mitsuaki KUMAZAWA², Toshiharu HIRAI², Michiro KOMATSU², Tanemasa ASANO¹ (1.Kyushu Univ., 2.JGC C&C)

2:30 PM - 2:45 PM

△ [19p-S423-4] Selective growth of Cu by LPCVD using CuI

〇Taiji Nishikawa¹, Satoshi Yamauchi¹ (1.Ibaraki Univ.)

2:45 PM - 3:00 PM

[19p-S423-5] Printing deposition of thin Cu film by ballistic-hot electron-irradiation

〇Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (1.Tokyo Univ. of Agri. & Technol.)

3:00 PM - 3:15 PM

[19p-S423-6] Effect of Additives to Neutral Electroless Copper Plating Solution

〇(M1)HITOSHI UTSUNO¹, Osamu Sugiura² (1.Chiba Inst. of Tech., graduate school of eng., 2.Chiba Inst. of Tech., fac. of eng.)

3:15 PM - 3:30 PM

[19p-S423-7] Precise Control of the Nickelidation Process of Si Nanowire by Ar⁺Ion Irradiation

〇(B)Shunsuke Oba¹, Shuichiro Hashimoto¹, Kohei Takei¹, Jing Sun¹, Xu Zhang¹, Taiyu Xu¹, Shuhei Asada¹, Toshihiro Usuda¹, Kiyoshi Endo¹, Motohiro Tomita^1,2,3, Hiroki Tokutake³, Ryosuke Imai³, Atsushi Ogura³, Takashi Matsukawa⁴, Meishoku Masahara⁴, Takanobu Watanabe¹ (1.Waseda Univ., 2.JSPS PD, 3.Meiji Univ., 4.AIST)

3:30 PM - 3:45 PM

[19p-S423-8] Effect of HfN capping layer for PtHfSi formation

〇(M2)Mengyi Chen¹, Yasushi Masahiro², Shun-ichiro Ohmi¹ (1.Tokyo Tech, 2.Tanaka Kikinzoku)

4:00 PM - 4:15 PM

[19p-S423-9] Decrease in parasitic resistance for metal S/D Ge n-MOSFET

〇(M1)Tomoki Tateyama¹, Yuta Nagatomi¹, Shintaro Tanaka¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (1.I-EggS, Kyushu Univ., 2.KASTEC, Kyushu Univ.)

4:15 PM - 4:30 PM

[19p-S423-10] Alleviation of Fermi Level Pinning at Metal/Germanium Interface Based on Control of Interfacial Dipole Density

〇Tomonori Nishimura¹, Takeaki Yajima¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

4:30 PM - 4:45 PM

[19p-S423-11] Shift of the Fermi level pinning position at metal/Ge interface by inserting Ge_1−xSn_x layer

〇Akihiro Suzuki¹, Osamu Nakatsuka¹, Mitsuo Sakashita¹, Shigeaki Zaima^1,2 (1.Grad. Sc. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

4:45 PM - 5:00 PM

[19p-S423-12] Characterization of W-silicide films composed of W-encapsulating Si clusters deposited using gas-phase reactions of WF₆ with SiH₄

〇Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (1.JST-PRESTO, 2.AIST)

5:00 PM - 5:15 PM

[19p-S423-13] Fracture Strength of SiO₂ Film

〇Norio Ishitsuka¹, Noriyuki Sakuma¹ (1.HItachi R&D Group)

5:15 PM - 5:30 PM

[19p-S423-14] Evaluation of Hot-Carrier-Induced RTN and Generated Oxide Traps

〇(M2)WATARU OSAWA¹, Toshiaki Tsuchiya¹ (1.Shimane Univ.)

5:30 PM - 5:45 PM

[19p-S423-15] Germanium Fin Transistor Channel Formation using Chlorine Neutral Beam

En-Tzu Lee¹, 〇Shuichi Noda¹, Wataru Mizubayashi², Kazuhiko Endo², Seiji Samukawa^1,2 (1.Tohoku Univ., 2.AIST)

5:45 PM - 6:00 PM

[19p-S423-16] Etching of Ge Channel Surfaces by Oxygen Molecules

〇Yukinori Morita¹, Tatsuro Maeda¹, Hiroyuki Ota¹, Wataru Mizubayashi¹, Shn-ichi O'uchi¹, Meishoku Masahara¹, Takashi Matsukawa¹, Kazuhiko Endo¹ (1.AIST)

6:00 PM - 6:15 PM

[19p-S423-17] Development of Ultra Accelerated Quantum Chemical Molecular Dynamics Method and Its Application to Semiconductor Process

〇Kenji Inaba¹, Emi Sato¹, Manami Sato¹, Yukiko Obara¹, Yukie Ishizawa¹, Masayuki Miyano¹, Ryuji Miura¹, Patrick Bonnaud¹, Ai Suzuki¹, Naoto Miyamoto¹, Nozomu Hatakeyama¹, Masanori Hariyama¹, Akira Miyamoto¹ (1.Tohoku Univ.)

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