Session information

Oral presentation

13 Semiconductors » 13.3 Insulator technology

[19a-E305-1~12] 13.3 Insulator technology

Thu. Sep 19, 2019 9:00 AM - 12:15 PM E305 (E305)

Shosuke Fujii(Toshiba Memory), Yasushi Hotta(Univ. of Hyogo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[19a-E305-1] TEM Tracking Study of Silicon Nanopillar Oxidation

〇Takuto Wako¹, Hiroaki Kariyazaki², Makoto Kuroda¹, Satoru Miyamoto¹, Hiroyuki Fujimori², Tetsuo Endoh^3,4, Kohei Itoh¹ (1.Keio Univ., 2.GlobalWafers Japan, 3.CIES Tohoku Univ., 4.JST-ACCEL)

9:15 AM - 9:30 AM

[19a-E305-2] Re-Examination of sulfur treatment effects on Al₂O₃/InGaAs MOS interface properties

〇SANghee YOON¹, Kimihiko Kato¹, Chiaki Yokoyama¹, Daehwan Ahn¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Tokyo University)

9:30 AM - 9:45 AM

[19a-E305-3] Leakage current of sputter fabricated AlScN film

〇Kazuki Kusafuka¹, Sunglin Tsai¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech. School of Eng., 2.Tokyo Tech. IIR)

9:45 AM - 10:00 AM

[19a-E305-4] Inspection and evaluation of chemical solution oxidation methods for metal / Si structures

〇Kazuki Harada¹, Yositaka Iwazaki¹, Tomo Ueno¹ (1.TAT)

10:00 AM - 10:15 AM

[19a-E305-5] Bias-applied hard x-ray photoelectron spectroscopy study of HfO₂/SiO₂ interface dipole modulation

〇Hiroshi Nohira¹, Reito Wada¹, Akira Yasui², Noriyuki Miyata³ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

10:15 AM - 10:30 AM

[19a-E305-6] Interface dipole modulation in HfO₂/TiO₂/SiO₂ structures prepared by ALD

〇Shutaro Asanuma¹, Kyoko Sumita¹, Yusuke Miyaguchi², Kazumasa Hotta², Takehito Jimbo², Kazuya Saito², Noriyuki Miyata¹ (1.AIST, 2.ULVAC)

10:45 AM - 11:00 AM

△ [19a-E305-7] Resistive switching properties observed in Al/metal oxide/Si structure

〇Ryota Teragaki¹, Kohei Kobayashi¹, Haruhiko Yoshida¹, Koji Arafune¹, Teruo Kanki², Yasushi Hotta¹ (1.Univ. of Hyogo, 2.ISIR-Sanken)

11:00 AM - 11:15 AM

[19a-E305-8] Dependence of resistive switching characteristics on device size of Al/HfO₂/n-Si(100)

〇Kohei Kobayashi¹, Ryota Teragaki¹, Haruhiko Yoshida¹, Koji Arafune¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

11:15 AM - 11:30 AM

[19a-E305-9] Improvement of Endurance for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)

11:30 AM - 11:45 AM

[19a-E305-10] Effect of substrate type on electrical characteristics of TiN/Hf_0.5Zr_0.5O₂/Si MFS capacitors

〇Kasidit Toprasertpong¹, Kento Tahara¹, Taichiro Fukui¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

11:45 AM - 12:00 PM

[19a-E305-11] Study of annealing condition for improving quality of Si/Hf_0.5Zr_0.5O₂interface

〇Kento Tahara¹, Kato Kimihiko¹, Toprasertpong Kasidit¹, Takenaka Mitsuru¹, Takagi Shinichi¹ (1.Univ.Tokyo, Faculty of engineering)

12:00 PM - 12:15 PM

▲ [19a-E305-12] Evaluation of surface potential of ferroelectric-gate MOS capacitors
by C-V analyses

〇(M2)Chenyu Liao¹, Kasidit Toprasertpong¹, Taichirou Fukui¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

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