Oral presentation

[9a-S422-1~13] 15.1 Bulk crystal growth

Sat. Mar 9, 2019 9:00 AM - 12:15 PM S422 (S422)

Yuui Yokota(Tohoku Univ.), Hiraku Ogino(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[9a-S422-1] Development of growth technique of spring-shaped sapphire single crystals grown by three-dimensional-micro-pulling-down method

〇Yuui Yokota¹, Tatsuki Takasugi², Yuji Ohashi^1,3, Kenji Inoue³, Masao Yoshino², Akihiro Yamaji², Shunsuke Kurosawa^1,4, Kei Kamada^1,5, Akira Yoshikawa^1,2,3,5 (1.NICHe, Tohoku Univ., 2.IMR, Tohoku Univ., 3.Piezo Studio, 4.Yamagata Univ., 5.C&A)

9:15 AM - 9:30 AM

[9a-S422-2] Chemical composition distribution and mechanical properties of Co-Cr-Mo alloy fiber fabricated by unidirectional solidification

〇(M1)Shoki Abe¹, Yuui Yokota², Takayuki Nihei³, Shunsuke Kurosawa^2,4, Akihiro Yamaji¹, Masao Yoshino¹, Yuji Ohashi², Kei Kamada^2,3, Akira Yoshikawa^1,2,3 (1.IMR Tohoku Univ., 2.NICHe Tohoku Univ., 3.C&A, 4.Yamagata Univ.)

9:30 AM - 9:45 AM

[9a-S422-3] Growth and scintillation properties of 1 inch Li(Ca_0.73Sr_0.25Eu_0.02)AlF₆
neutron scintillator single crystal by Cz method

〇Kazuya Origuchi¹, Yuui Yokota², Masao Yoshino¹, Akihiro Yamaji¹, Yuji Ohashi², Shunsuke Kurosawa^2,3, Kei Kamada^2,4, Akira Yoshikawa^1,2,4 (1.IMR, Tohoku Univ, 2.NICHe, Tohoku Univ., 3.Yamagata Univ., 4.C&A)

9:45 AM - 10:00 AM

[9a-S422-4] Crystal growth of Mg-substituted ZnWO4 crystals for the development of direction-sensitive scintillators

〇Akihiro Yamaji¹, Shunsuke Kurosawa^2,3, Takahiko Horiai¹, Hiroyuki Sekiya⁴, Juan Pedersen⁴, Masao Yoshino¹, Ohashi Yuji², Yuui Yokota², Kei Kamada², Akira Yoshikawa^1,2 (1.Tohoku Univ. IMR, 2.Tohoku Univ. NICHe, 3.Yamagata Univ., 4.Tokyo Univ.)

10:00 AM - 10:15 AM

▲ [9a-S422-5] 2-inch size Czochralski growth and scintillation properties of Mo co-doped Ce:Gd₃Ga₃Al₂O₁₂(GAGG)

〇KYOUNGJIN KIM¹, Kei Kamada^2,3, Yasuhiro Shoji^3,1, Masao Yoshino¹, Vladimir V. Kochurikhin³, Akihiro Yamaji¹, Shunsuke Kurosawa^2,4, Yuui Yokota², Yuji Ohashi², Akira Yoshikawa^1,2,3 (1.IMR, Tohoku Univ., 2.NICHe, Tohoku Univ., 3.C&A Corp., 4.Yamagata Univ.)

10:15 AM - 10:30 AM

[9a-S422-6] Development of high-quality and large CsLiB₆O₁₀ crystal

〇Go Ando¹, Takahashi Yoshinori¹, Murai Ryota¹, Kato Kosaku¹, Nakajima Makoto¹, Imanishi Masayuki², Mori Yusuke², Yoshimura Masashi¹ (1.ILE, Osaka Univ., 2.Grad. School of Eng., Osaka Univ.)

10:30 AM - 10:45 AM

△ [9a-S422-7] The effect of Ga/Al ratio on the melt structure and crystal growth of Ca₃Ta(Ga,Al)₃Si₂O₁₄

〇(M2)Yuki Honda¹, Hiromasa Niinomi¹, Jun Nozawa¹, Junpei Okada¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.)

10:45 AM - 11:00 AM

[9a-S422-8] Analysis of dislocation embedded in Low-angle grain boundary in LiTaO₃ crystal (Ⅱ)

〇Tomio Kajigaya¹, Yutaka Ohno² (1.Sumitomo Metal Mining Co., Ltd., 2.IMR, Tohoku Univ.)

11:00 AM - 11:15 AM

▲ [9a-S422-9] Study on the electrical relationship at the interface between LN melt and LN crystal

〇(D)Qilin Shi¹, Chihiro Koyama², Jun Nozawa¹, Satoshi Uda¹ (1.IMR, Tohoku Univ., 2.JAXA)

11:15 AM - 11:30 AM

[9a-S422-10] Single crystal growth of Fe-Ga alloys by vertical Bridgman method

〇Shotaro Kawamura¹, Kiyoshi Izumi¹, Katsuhiko Okano¹, Eiichiro Nishimura¹, Toshinori Taishi², Keigo Hoshikawa² (1.Sumitomo Metal Mining CO., LTD., 2.Shinshu Univ.)

11:30 AM - 11:45 AM

[9a-S422-11] Crystal growth of phi 4 inch single crystal ingot of Fe-Ga magnetostrictive alloy and the crystal orientation dependence for the magnetostrictive power generation

〇Rayko Simura¹, Takumi Takahashi¹, Tsuyoshi Kumagai², Toru Kawamata³, Shun Fujieda⁴, Shigeru Suzuki¹, Tsuguo Fukuda² (1.IMRAM, Tohoku Univ., 2.FxL co.ltd, 3.IMR, Tohoku Univ., 4.Tech, Osaka Univ.)

11:45 AM - 12:00 PM

[9a-S422-12] Shaped crystal growth of iron-aluminum alloys and evaluation of magnetic properti

〇Kei Kamada^1,2, Rikito Murakami², Mototaka Arakawa⁴, Tamotsu Minamitani⁵, Toshiyuki Ueno⁵, Yasuhiro Shoji², Akihiro Yamaji³, Masao Yoshino³, Shunsuke Kurosawa¹, Yuui Yokota¹, Yuji Ohashi¹, Akira Yoshikawa^1,2,3 (1.NICHe, Tohoku Univ., 2.C&A corp., 3.IMR, Tohoku Univ., 4.BME Tohoku Univ., 5.Kanawawa Univ.)

12:00 PM - 12:15 PM

[9a-S422-13] Growth, processing and evaluation of Ni crystal of 100mm in diameter using CZ method

〇Takashi Fujii^1,2, Watanabe Kiyokazu¹, Takahashi Kazuya¹, Kumagai Tsuyoshi¹, Fukuda Tsuguo¹, Matsuoka Takashi³, Kwamata Tooru³, Sugiyama Kazumasa³ (1.Fukuda Cryst. Lab., 2.Katsura opt., 3.IMR)

Oral presentation

[9p-S422-1~13] 15.1 Bulk crystal growth

Sat. Mar 9, 2019 1:30 PM - 6:00 PM S422 (S422)

Kei Kamada(Tohoku Univ.), Yuui Yokota(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:15 PM

[9p-S422-1] [INVITED] Collaboration between experiment and numerical studies:
How numerical simulations can predict defects in crystals?

〇Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

2:15 PM - 3:00 PM

[9p-S422-2] [INVITED] Trial toward the novel functional single crystal materials

〇Kiyoshi Shimamura¹, E.A. Garcia Villora¹ (1.NIMS)

3:00 PM - 3:15 PM

[9p-S422-3] Observation of Point Defect Distributions in Detached CZ Si Crystals from Melt (1) -Vacancy Concentrations in each predominant defect regions measured by DLTS-

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.Shin-Etsu Handotai, 2.ISIR, Osaka Univ.)

3:15 PM - 3:30 PM

[9p-S422-4] Observation of Point Defect Distributions in Detached CZ Si Crystals from Melt (2) -Distributions of Interstitials during Cooling Process in Growing Crystals-

〇Takao Abe¹, Toru Takahashi¹, Koun Shirai² (1.Shin-Etsu Handotai, 2.ISIR, Osaka Univ.)

3:30 PM - 3:45 PM

[9p-S422-5] Control of B concentration in silicon-germanium crystal growth by TLZ technique

Koyuki Kawakami¹, Koji Ogawa¹, Rika Kikuchi¹, Yasutomo Arai², 〇Toshinori Taishi¹ (1.Shinshu Univ., 2.JAXA)

4:00 PM - 4:15 PM

[9p-S422-6] The growth of bulk GaN single crystals using Flux-Film-Coated Na flux method.

〇Fumio Kawamura¹, Takashi Taniguchi¹ (1.NIMS)

4:15 PM - 4:30 PM

[9p-S422-7] Low temperature solution growth of GaSe crystal by In flux method under a temperature gradient

〇(D)Yohei Sato¹, Chao Tang¹, Katsuya Watanabe¹, Junya Ohsaki¹, Takuya Yamamoto², Tadao Tanabe¹, Yutaka Oyama¹ (1.Tohoku Univ. Eng., 2.Tohoku Univ. Env.)

4:30 PM - 4:45 PM

▲ [9p-S422-8] Low temperature liquid phase growth and terahertz optical properties of 2D chalcogenide InSe crystal

〇Chao Tang¹, Yohei Sato¹, Katsuya Watanabe¹, Junya Osaki¹, Tadao Tanabe¹, Yutaka Oyama¹ (1.Tohoku Univ.)

4:45 PM - 5:00 PM

[9p-S422-9] Determination of Experimental Condition of InGaSb Crystal Growth on International Space Station and Diffusion Coefficient by Using Numerical Simulation

〇Yasunori Okano¹, Xin Jin¹, Takuya Yamamoto², Atsushi Sekimoto¹, Yasuhiro Hayakawa³, Yuko Inatomi⁴ (1.Osaka Univ, 2.Tohoku Univ., 3.Shizuoka Univ., 4.JAXA)

5:00 PM - 5:15 PM

[9p-S422-10] Optimization of Crucible Temperature Distribution during TSSG-SiC Growth by Inverse Analysis

〇Yasunori Okano¹, Takashi Horiuchi¹, Atsushi Sekimoto¹, Toru Ujihara² (1.Osaka Univ, 2.Nagoya Univ)

5:15 PM - 5:30 PM

[9p-S422-11] Demonstration of High-Speed Growth of φ4 inch Thick 4H-SiC Single Crystals by High Temperature Chemical Vapor Deposition (HTCVD) Method

〇Yuichiro Tokuda¹, Hironari Kuno¹, Hideyuki Uehigashi¹, Takeshi Okamoto¹, Takahiro Kanda¹, Nobuyuki Ohya¹, Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1.DENSO CORPORATION, 2.CRIEPI)

5:30 PM - 5:45 PM

[9p-S422-12] Growth mechanism of binary colloidal crystals

〇Jun Nozawa¹, Suxia Guo¹, Hiromasa Niinomi¹, Junpei Okada¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.)

5:45 PM - 6:00 PM

▲ [9p-S422-13] The effect of substrate on nucleation rate of two-dimensional colloidal crystals

〇(D)Suxia Guo¹, Jun Nozawa¹, Hiromasa Niinomi¹, Junpei Okada¹, Satoshi Uda¹ (1.IMR, Tohoku Univ.)

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[9a-S422-1~13] 15.1 Bulk crystal growth

[9a-S422-1] Development of growth technique of spring-shaped sapphire single crystals grown by three-dimensional-micro-pulling-down method

[9a-S422-2] Chemical composition distribution and mechanical properties of Co-Cr-Mo alloy fiber fabricated by unidirectional solidification

[9a-S422-3] Growth and scintillation properties of 1 inch Li(Ca_0.73Sr_0.25Eu_0.02)AlF₆
neutron scintillator single crystal by Cz method

[9a-S422-4] Crystal growth of Mg-substituted ZnWO4 crystals for the development of direction-sensitive scintillators

▲ [9a-S422-5] 2-inch size Czochralski growth and scintillation properties of Mo co-doped Ce:Gd₃Ga₃Al₂O₁₂(GAGG)

[9a-S422-6] Development of high-quality and large CsLiB₆O₁₀ crystal

△ [9a-S422-7] The effect of Ga/Al ratio on the melt structure and crystal growth of Ca₃Ta(Ga,Al)₃Si₂O₁₄

[9a-S422-8] Analysis of dislocation embedded in Low-angle grain boundary in LiTaO₃ crystal (Ⅱ)

▲ [9a-S422-9] Study on the electrical relationship at the interface between LN melt and LN crystal

[9a-S422-10] Single crystal growth of Fe-Ga alloys by vertical Bridgman method

[9a-S422-11] Crystal growth of phi 4 inch single crystal ingot of Fe-Ga magnetostrictive alloy and the crystal orientation dependence for the magnetostrictive power generation

[9a-S422-12] Shaped crystal growth of iron-aluminum alloys and evaluation of magnetic properti

[9a-S422-13] Growth, processing and evaluation of Ni crystal of 100mm in diameter using CZ method

[9p-S422-1~13] 15.1 Bulk crystal growth

[9p-S422-1] [INVITED] Collaboration between experiment and numerical studies:
How numerical simulations can predict defects in crystals?

[9p-S422-2] [INVITED] Trial toward the novel functional single crystal materials

[9p-S422-3] Observation of Point Defect Distributions in Detached CZ Si Crystals from Melt (1) -Vacancy Concentrations in each predominant defect regions measured by DLTS-

[9p-S422-4] Observation of Point Defect Distributions in Detached CZ Si Crystals from Melt (2) -Distributions of Interstitials during Cooling Process in Growing Crystals-

[9p-S422-5] Control of B concentration in silicon-germanium crystal growth by TLZ technique

[9p-S422-6] The growth of bulk GaN single crystals using Flux-Film-Coated Na flux method.

[9p-S422-7] Low temperature solution growth of GaSe crystal by In flux method under a temperature gradient

▲ [9p-S422-8] Low temperature liquid phase growth and terahertz optical properties of 2D chalcogenide InSe crystal

[9p-S422-9] Determination of Experimental Condition of InGaSb Crystal Growth on International Space Station and Diffusion Coefficient by Using Numerical Simulation

[9p-S422-10] Optimization of Crucible Temperature Distribution during TSSG-SiC Growth by Inverse Analysis

[9p-S422-11] Demonstration of High-Speed Growth of φ4 inch Thick 4H-SiC Single Crystals by High Temperature Chemical Vapor Deposition (HTCVD) Method

[9p-S422-12] Growth mechanism of binary colloidal crystals

▲ [9p-S422-13] The effect of substrate on nucleation rate of two-dimensional colloidal crystals

Authentication

Sessions

15 Crystal Engineering » 15.1 Bulk crystal growth

[9a-S422-1~13] 15.1 Bulk crystal growth

▲ [9a-S422-5] 2-inch size Czochralski growth and scintillation properties of Mo co-doped Ce:Gd3Ga3Al2O12 (GAGG)

△ [9a-S422-7] The effect of Ga/Al ratio on the melt structure and crystal growth of Ca3Ta(Ga,Al)3Si2O14

▲ [9a-S422-9] Study on the electrical relationship at the interface between LN melt and LN crystal

[9p-S422-1~13] 15.1 Bulk crystal growth

▲ [9p-S422-8] Low temperature liquid phase growth and terahertz optical properties of 2D chalcogenide InSe crystal

▲ [9p-S422-13] The effect of substrate on nucleation rate of two-dimensional colloidal crystals

Authentication

▲ [9a-S422-5] 2-inch size Czochralski growth and scintillation properties of Mo co-doped Ce:Gd₃Ga₃Al₂O₁₂(GAGG)

△ [9a-S422-7] The effect of Ga/Al ratio on the melt structure and crystal growth of Ca₃Ta(Ga,Al)₃Si₂O₁₄