Oral presentation

[11a-N304-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Sep 11, 2021 9:00 AM - 12:00 PM N304 (Oral)

Kenji Yamaguchi(QST), Kosuke Hara(Univ. of Yamanashi)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-N304-1] [Young Scientist Presentation Award Speech] Investigation of Zn_1-xGe_xO interlayers for n⁺-AZO/p-BaSi₂ thin-film solar cells

〇Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

9:15 AM - 9:30 AM

[11a-N304-2] Database-driven material search for electron/hole transport layers of BaSi₂ solar cells

〇Kosuke Hara¹ (1.CCST, Univ. of Yamanashi)

9:30 AM - 9:45 AM

△ [11a-N304-3] Evaluation of post-annealed As-doped BaSi₂ films

〇Sho Aonuki¹, Shunsuke Narita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsuukuba)

9:45 AM - 10:00 AM

[11a-N304-4] R_Ba/R_Si dependence of post-annealing effect on B-doped BaSi₂ films

〇Shunsuke Narita¹, Yudai Yamashita¹, Sho Aonuki¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ.)

10:00 AM - 10:15 AM

[11a-N304-5] Effect of face-to-face annealing for improving the quality of Mg₂Si thin film prepared by thermal evaporation

〇Kaisei Sato¹, Satoru Miyamoto¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Takashi Itoh¹, Noritaka Usami¹ (1.Nagoya Univ.)

10:15 AM - 10:30 AM

[11a-N304-6] Formation of Mg₂Si_1-xSn_x thin films by co-sputtering using two different targets

〇Kenta Uefuji¹, Hiroshi Katsumata¹ (1.Meiji Univ.)

10:45 AM - 11:00 AM

△ [11a-N304-7] Impact of Ba/Si deposition rate ratios during RF sputtering on the characteristics of BaSi₂ films on glass substrates

〇Ryota Koitabashi¹, Hayato Hasebe¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba, 2.Tosoh Corporation)

11:00 AM - 11:15 AM

[11a-N304-8] Formation of BaSi₂ films by co-sputtering of Ba and BaSi₂ targets

〇Kazuki Kido¹, Ryota Koitabashi¹, Hayato Hasebe¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ.Tsukuba, 2.Tosoh Corporation)

11:15 AM - 11:30 AM

[11a-N304-9] Characterizations of B-doped BaSi₂ films formed by sputtering

〇Hayato Hasebe¹, Ryota Koitabashi¹, Kazuki Kido¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)

11:30 AM - 11:45 AM

[11a-N304-10] Growth of polycrystalline BaSi₂ films on insulating layers for electrical characterizations

〇Ryuichi Yoshida¹, Ryota Koitabashi¹, Yudai Yamashita¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Univ.Tsukuba, 2.Tosoh Corporation)

11:45 AM - 12:00 PM

△ [11a-N304-11] Synthesis of Mg₂Si-Mg₂Ge based solid solution nanosheet bundles

〇Kaito Sekino¹, Tomoya Koga¹, Yosuke Shimura^1,2, Naohisa Takahashi³, Hirokazu Tatsuoka¹ (1.Shizuoka Univ., 2.RIE Shizuoka Univ., 3.YMC R&D)

Oral presentation

[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

Sat. Sep 11, 2021 1:30 PM - 5:00 PM N304 (Oral)

Takashi Suemasu(Univ. of Tsukuba), Yoshikazu Terai(Kyushu Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[11p-N304-1] Analysis of electrical characteristics of Mg₂Si Schottky diodes

〇Makoto Chiba¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

1:45 PM - 2:00 PM

[11p-N304-2] Avalanche amplification of mesh-electrode Mg₂Si-PD at low temperature

〇Yudai Ichikawa¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

2:00 PM - 2:15 PM

[11p-N304-3] Reactive Ion Etching Property of Mg₂Si Substrate Using CF₄

〇Rikuto Nakamura¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

2:15 PM - 2:30 PM

[11p-N304-4] Evaluation of Mg₂Si substrate using X-ray rocking curve measurement

〇Tsubasa Umehara¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

2:30 PM - 2:45 PM

[11p-N304-5] Hydrogen state in vanadium dioxide simulated by muon

〇Hirotaka Okabe¹, Masatoshi Hiraishi¹, Akihiro Koda^1,2, Takeo Ohsawa³, Naoki Ohashi³, Ryosuke Kadono^1,2 (1.KEK-IMSS, 2.SOKENDAI, 3.NIMS)

2:45 PM - 3:00 PM

△ [11p-N304-6] Preparation and Characterization of Non-Perovskite-Type Ternary CuBiI₄ Thin Films.

〇(M2)Seiya Nakagami¹, Tomoki Hoshino¹, Kaito Kobayashi¹, Kaede Makiuchi¹, Naoomi Yamada¹ (1.Chubu Univ.)

3:15 PM - 3:30 PM

[11p-N304-7] Investigation of topological insulator Bi₂Se₃epitaxial films by polarized Raman spectra

〇Tomohiro Kondo¹, Takamu Nozaki¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

3:30 PM - 3:45 PM

▼ [11p-N304-8] Synthesis of Type-II Ge Clathrate Films with Various Film Thickness

〇(D)Rahul Kumar¹, Tun Naing Aye¹, Fumitaka Ohashi², Himanshu Shekhar Jha², Tetsuji Kume^1,2 (1.Division of Environmental and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 2.Department of Electrical, Electronic and Computer Engineering, Faculty of Engineering, Gifu University)

3:45 PM - 4:00 PM

[11p-N304-9] Evaluation of PL lifetimes in Si/β-(Fe_1-xRu_x)Si₂/Si polycrystalline stacked structures

〇Ren Yoshihara¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

4:00 PM - 4:15 PM

[11p-N304-10] Fabrication of β-FeSi₂/Si modulation-doped heterostructures and their electrical properties

〇Kazuki Yamato¹, Hidekazu Kanda¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

4:15 PM - 4:30 PM

[11p-N304-11] Synthesis and physical properties evaluations of SrSi₂

〇Motoharu Imai¹, Alinejad Babak², Haruhiko Udono² (1.NIMS, 2.Ibaraki Univ.)

4:30 PM - 4:45 PM

[11p-N304-12] First-principles calculations of the thermoelectric transport properties of narrow-gap semiconducting α-SrSi₂ using hybrid-functional approach

〇Daishi Shiojiri¹, Tsutomu Iida¹, Masato Yamaguchi¹, Naomi Hirayama², Yoji Imai¹ (1.Tokyo Univ. of Sci., 2.Shimane Univ.)

4:45 PM - 5:00 PM

△ [11p-N304-13] First-principles calculations of the thermoelectric transport properties
of isoelectronic impurity doped α-SrSi₂

〇(M2)Masato Yamaguchi¹, Daishi Shiojiri¹, Naomi Hirayama², Yoji Imai¹, Tsutomu Iida¹ (1.Tokyo Univ. of Sci., 2.Shimane Univ.)

Poster presentation

[23a-P04-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 23, 2021 9:00 AM - 10:40 AM P04 (Poster)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 10:40 AM

[23a-P04-1] Electronic Structural Analysis of Transition Metal or Rare-Earth Element Incorporated Perovskite Crystals

〇Atsushi Suzuki¹, Mari Oe¹, Kyo Kishimoto¹, Takeo Oku¹ (1.Univ. of Shiga Pref.)

9:00 AM - 10:40 AM

[23a-P04-2] Thickness dependence of polarized Raman spectra in topological insulator Bi₂Se₃ epitaxial films

〇Takamu Nozaki¹, Tomohiro Kondo¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

9:00 AM - 10:40 AM

[23a-P04-3] Synthesis of MnSi_1.7nanosheet bundles using MnCl₂ molten salt

〇Fumio Komeda¹, Shogo Itoh², Yosuke Shimura^2,3, Naohisa Takahashi⁴, Hirokazu Tatsuoka² (1.Shizuoka Univ., 2.Shizuoka Univ, 3.RIE Shizuoka Univ., 4.YMC R&D)

9:00 AM - 10:40 AM

[23a-P04-4] Synthesis of Mg₂Si nanosheet bundles using molten MgCl₂-Mg solvent

〇Tomoya Koga¹, Yosuke Shimura^1,2, Naohisa Takahashi³, Hirokazu Tatsuoka¹ (1.Shizuoka Univ., 2.RIE Shizuoka Univ., 3.YMC R&D)

9:00 AM - 10:40 AM

[23a-P04-5] Synthesis of Mg₂Si nanosheet bundles using molten MgCl₂-Mg and low-melting-point metal mixed solvents

〇Keigo Sasaki¹, Tomoya Koga¹, Hirokazu Tatsuoka¹, Yosuke Shimura^2,1, Naohisa Takahashi³ (1.Shizuoka Univ., 2.RIE Shizuoka Univ., 3.YMC R&D)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11a-N304-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

[11a-N304-1] [Young Scientist Presentation Award Speech] Investigation of Zn_1-xGe_xO interlayers for n⁺-AZO/p-BaSi₂ thin-film solar cells

[11a-N304-2] Database-driven material search for electron/hole transport layers of BaSi₂ solar cells

△ [11a-N304-3] Evaluation of post-annealed As-doped BaSi₂ films

[11a-N304-4] R_Ba/R_Si dependence of post-annealing effect on B-doped BaSi₂ films

[11a-N304-5] Effect of face-to-face annealing for improving the quality of Mg₂Si thin film prepared by thermal evaporation

[11a-N304-6] Formation of Mg₂Si_1-xSn_x thin films by co-sputtering using two different targets

△ [11a-N304-7] Impact of Ba/Si deposition rate ratios during RF sputtering on the characteristics of BaSi₂ films on glass substrates

[11a-N304-8] Formation of BaSi₂ films by co-sputtering of Ba and BaSi₂ targets

[11a-N304-9] Characterizations of B-doped BaSi₂ films formed by sputtering

[11a-N304-10] Growth of polycrystalline BaSi₂ films on insulating layers for electrical characterizations

△ [11a-N304-11] Synthesis of Mg₂Si-Mg₂Ge based solid solution nanosheet bundles

[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

[11p-N304-1] Analysis of electrical characteristics of Mg₂Si Schottky diodes

[11p-N304-2] Avalanche amplification of mesh-electrode Mg₂Si-PD at low temperature

[11p-N304-3] Reactive Ion Etching Property of Mg₂Si Substrate Using CF₄

[11p-N304-4] Evaluation of Mg₂Si substrate using X-ray rocking curve measurement

[11p-N304-5] Hydrogen state in vanadium dioxide simulated by muon

△ [11p-N304-6] Preparation and Characterization of Non-Perovskite-Type Ternary CuBiI₄ Thin Films.

[11p-N304-7] Investigation of topological insulator Bi₂Se₃epitaxial films by polarized Raman spectra

▼ [11p-N304-8] Synthesis of Type-II Ge Clathrate Films with Various Film Thickness

[11p-N304-9] Evaluation of PL lifetimes in Si/β-(Fe_1-xRu_x)Si₂/Si polycrystalline stacked structures

[11p-N304-10] Fabrication of β-FeSi₂/Si modulation-doped heterostructures and their electrical properties

[11p-N304-11] Synthesis and physical properties evaluations of SrSi₂

[11p-N304-12] First-principles calculations of the thermoelectric transport properties of narrow-gap semiconducting α-SrSi₂ using hybrid-functional approach

△ [11p-N304-13] First-principles calculations of the thermoelectric transport properties
of isoelectronic impurity doped α-SrSi₂

[23a-P04-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

[23a-P04-1] Electronic Structural Analysis of Transition Metal or Rare-Earth Element Incorporated Perovskite Crystals

[23a-P04-2] Thickness dependence of polarized Raman spectra in topological insulator Bi₂Se₃ epitaxial films

[23a-P04-3] Synthesis of MnSi_1.7nanosheet bundles using MnCl₂ molten salt

[23a-P04-4] Synthesis of Mg₂Si nanosheet bundles using molten MgCl₂-Mg solvent

[23a-P04-5] Synthesis of Mg₂Si nanosheet bundles using molten MgCl₂-Mg and low-melting-point metal mixed solvents

Authenticate

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[11a-N304-1~11] 13.2 Exploratory Materials, Physical Properties, Devices

△ [11a-N304-3] Evaluation of post-annealed As-doped BaSi2 films

△ [11a-N304-7] Impact of Ba/Si deposition rate ratios during RF sputtering on the characteristics of BaSi2 films on glass substrates

△ [11a-N304-11] Synthesis of Mg2Si-Mg2Ge based solid solution nanosheet bundles

[11p-N304-1~13] 13.2 Exploratory Materials, Physical Properties, Devices

△ [11p-N304-6] Preparation and Characterization of Non-Perovskite-Type Ternary CuBiI4 Thin Films.

▼ [11p-N304-8] Synthesis of Type-II Ge Clathrate Films with Various Film Thickness

△ [11p-N304-13] First-principles calculations of the thermoelectric transport propertiesof isoelectronic impurity doped α-SrSi2

[23a-P04-1~5] 13.2 Exploratory Materials, Physical Properties, Devices

Authenticate

△ [11a-N304-3] Evaluation of post-annealed As-doped BaSi₂ films

△ [11a-N304-7] Impact of Ba/Si deposition rate ratios during RF sputtering on the characteristics of BaSi₂ films on glass substrates

△ [11a-N304-11] Synthesis of Mg₂Si-Mg₂Ge based solid solution nanosheet bundles

△ [11p-N304-6] Preparation and Characterization of Non-Perovskite-Type Ternary CuBiI₄ Thin Films.

△ [11p-N304-13] First-principles calculations of the thermoelectric transport properties
of isoelectronic impurity doped α-SrSi₂