[C-4-5] Planarized Deposition of High Quality Silicon Dioxide Film by Photo-Assisted Plasma CVD at 300℃ Using TEOS

Nobumasa SUZUKI、Kazuya MASU、Kazuo TSUBOUCHI、Nobuo MIKOSHIBA (1.Production Engineering Research Laboratory, Canon Inc.、2.Research Institute of Electrical Communication, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-6] Single Crystallization of Aluminum on SiO2 by Thermal Annealing and Observation with Scanning μ-RHEED Microscope

Kazuya MASU、Kazuo TSUBOUCHI、Yohei HIURA、Tatsuya MATANO、Nobuo MIKOSHIBA (1.Research Institute of Electrical Communication, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-7] Electromigration in a Single Crystal Submicron Width Aluminum Interconnection

Shoso Shingubara、Yasushi Nakasaki、Hisashi Kaneko (1.Toshiba ULSI Research Center, Toshiba R&D Center)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-8] Pulsed Current Electromigration Mechanism -Instantaneous Temperature Profile Model

Takeshi Furusawa、Kenji Hinode、Yoshio Homma (1.Central Research Laboratory, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-1] Analytical Model for Circuit Simulation with Quarter Micron MOSFETs: Subthreshold Characteristics

M. Miura-Mattausch、H. Jacobs (1.Siemens AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-2] Performance of Extrinsic and Intrinsic MOSFETs in Deep Submicron VLSI

Dezsoe Takacs (1.Siemens AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-3] Nanometer Structure of Gate Electrode/Gate Insulator Interface and Anomalous Voltage Deviation of Tunneling Current in Submicron MOS Devices

M. Ushiyama、Y. Ohji、T. Nishimoto、K. Komori、H. Kume、S. Nakagawa、S. Tachi (1.Central Research Laboratory, Hitachi Ltd.、2.Semiconductor Design & Development Center, Hitachi Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-4] Effects of Depleted Poly-Si Gate on MOSFET Performance

Masao Iwase、Shin-ichi Takagi (1.ULSI Research Center, TOSHIBA Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-5] Effects of Surface Orientation on the Universality of Inversion-Layer Mobility in Si MOSFETs

Shin-ichi Takagi、Masao Iwase、Akira Toriumi (1.ULSI Research Center, TOSHIBA Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-6] Mechanical Stress Induced Threshold Voltage Shifts for Nitrided Oxide Gate n- and p- MOSFETs

H. S. Momose、T. Morimoto、S. Takagi、K. Yamabe、S. Onga、H. Iwai (1.ULSI Research Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

310件中(61 - 70)

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