[P-1] SSDM 30th Anniversary Memorial Talk, Past, Present and Future of Solid State Devices

Shoji TANAKA (1.Superconductivity Research Laboratory Inernational Superconductivity Technology Center)

1998 International Conference on Solid State Devices and Materials |PDF Download

[P-2] The Future of the IT Industry and Japan's Role

Tadahiro Sekimoto (1.Chairman of the Board, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[P-3] Self Assembled Quantum Dots and Device Prospects

P. M. Petroff, W. Schoenfeld, T. Lundstrom, N. Horiguchi (1.Materials Department, University of California)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-1-1] High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment

S. Miyazaki, K. Hamada, T. Kitano (1.ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-1-2] Lateral Diffusion Distance Measurement for 40-80 nm Junctions by Etching/TEM-EELS Method

Y. Kunimune, N. Nishio, N. Kodama, H. Kikuchi, T. Toda, A. Mineji, S. Shishiguchi, S. Saito (1.ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-1-3] Sticking Configuration of Boron Atoms from B2H6 on Silicon during Rapid Vapor-Phase Doping

Yukihiro Kiyota, Hideaki Tanaka, Taroh Inada (1.Central Research Laboratory, Hitachi, 2.College of Engineering, Hosei University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-1-4] Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si

Jianxin Xia, Tomoya Saito, Ryangsu Kim, Takenori Aoki, Yoshinari Kamakura, Kenji Taniguchi (1.Department of Electronics and Information Systems, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-1-5] Hydrogen-Enhancing Boron Penetration in P-MOS Devices during SiO2 Chemical Vapor Deposition

Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Tada, Yuji Kataoka, Hiroshi Arimoto, Kei Horiuchi (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-1-6] Quantitative Evaluation of Dopant Loss in Low Energy As Implantation for Low-Resistive, Ultra Shallow Source/Drain Formation

M. Koh, K. Egusa, H. Furumoto, K. Shibahara, S. Yokoyama, M. Hirose (1.RCNS, Hiroshima University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-2-1] Charge-Free and Dopant Dependence-Free Etching Processes Using Non-Maxwellian Electron Energy Distributions in Ultra-High-Frequency Plasma

Seiji Samukawa, Hiroto Ohtake, Ko Noguchi (1.Silicon Systems Research Laboratories, 2.ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download