[D-1-4] An Analog Integrated Circuit for Motion Detection Based on Biological Correlation Model

Masahiro Ohtani, Tetsuya Asai, Naoki Ohshima, Hiroo Yonezu (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Modeling and Characterization for Ultra Deep Submission CMOS Devices

Narain D. Arora (1.Simplex Solutions, Inc.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] Noticeable Enhancement of Edge Effect in Short Channel Characteristics of Trench-Isolated MOSFETs

Toshiyuki Oishi, Katsuomi Shiozawa, Akihiko Furukawa, Yuji Abe, Yasunori Tokuda (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Stress-Induced Device Degradation Due to Die-Attach Process after Area Bump Formation

Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hakaru Kyuragi (1.NTT System Electronics Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Oxide Thickness Dependence of Hot Carrier Stress Induced Drain Leakage Current Degradation in Thin-Oxide n-MOSFET's

Tahui Wang, N. K. Zous, L. Y. Huang, C. K. Yeh, T. S. Chao (1.Department of Electronics Engineering, National Chiao-Tung University, 2.National Nano Devices Lab.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs

Kern Rim, Judy L. Hoyt, James F. Gibbons (1.Solid State Electronics Laboratory, Stanford University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[D-2-6] Performance Considerations in Using High-k Dielectrics for Deep Sub-Micron MOSFETs

A. Inani, V. Ramgopal Rao, B. Cheng, M. Cao, P. V. Voorde, W. Greene, J. C. S. Woo (1.EE Department, University of California, 2.ULSI Research Laboratory, Hewlett-Packard Laboratories)

1998 International Conference on Solid State Devices and Materials |PDF Download

[LA-1] Buried Insulator Engineering for sub-0.05μm Fully-Depleted SOI-MOSFET to Reduce the Drain Induced Barrier Lowering

Risho Koh (1.Silicon systems research laboratory, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[LA-2] A Novel Shallow Trench Isolation with Mini-Spacer Technology

W. K. Yeh, Tony Lin, Coming Chen, S. W. Sun (1.United Microelectronics Corp., Technology Development Division)

1998 International Conference on Solid State Devices and Materials |PDF Download

[LA-3] Improvement of SiO2/4H-SiC Interface by Using High Temperature Hydrogen Annealing at 1000℃

Kenji Fukuda, Kiyoko Nagai, Toshihiro Sekigawa, Sadafumi Yoshida, Kazuo Arai, Masahito Yoshikawa (1.New Energy and Industrial Technology Development Organization, Electrotechnical Laboratory, 2.Japan Atomic Energy Research Institute)

1998 International Conference on Solid State Devices and Materials |PDF Download