[A-2-2] Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method

Kenji Ooba, Yoshimitsu Nakashima, Anri Nakajima, Shin Yokoyama (1.Research Center for Nanodevices and Systems, Hiroshima University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-2-3] Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment

Yuji Saito, Katsuyuki Sekine, Masaki Hirayama, Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-2-4] New PentaCoordinated Si(PCS) Model for SiN CVD Mechanism

Shigehiko Saida, Yoshitaka Tsunashima (1.Microelectronics Engineering Laboratory, TOSHIBA Corp.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[A-2-5] Formation of Very Thin Epitaxial Al2O3 Pre-Layer with Very Smooth Surface on Si(111) Using Protective Oxide Layer

Young-Chul Jung, Hiroyuki Miura, Makoto Ishida (1.Department of Electric and Electronic Engineering, Toyohashi University of Technology)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-1-1] Implementation of "System On a Chip" Merging DRAM and Analog with High Performance 0.35nm Logic Device

Sunil Yu, Jong Shik Yoon, Hyae Ryoung Lee, Chul-Soon Kwon, Dong Woo Kim, Won Chul Kim, Chang-Sik Choi (1.LSI TD, System LSI Business, Samsung Electronics Co. Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-1-2] Trap Assisted Leakage Mechanism of 'worst' Junction in Giga-bit DRAM Using Negative Word-Line Voltage

Hiroshi SUZUKI, Manabu KOJIMA, Yasuo NARA (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-1-3] Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond

K. Matsui, K. Noda, K. Inoue, T. Itani, H. Iwasaki, T. Yoshii, T. Tanigawa (1.ULSI Device Development Laboratory, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-1-4] Optimization of Giga-bit DRAM Cell Transistors by Channel and Drain Engineering

M. Kojima, H. Suzuki, T. Miyashita, H. Anzai, T. Nagata, K. Takahashi, M. Sato, Y. Nara (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-1-5] An Analytical Delay Model for Read Operation at Any Position on DRAM Bit Lines

Hongchin Lin, Chia-Hsiang Sha, Shyh-Chyi Wong (1.Dept. of Electrical Engineering, National Chung-Hsing University, 2.Institute of Electrical Engineering, Feng-Chia University)

1998 International Conference on Solid State Devices and Materials |PDF Download

[B-1-6] Scaling Law for Secondary Cosmic-Ray Neutron-Induced Soft-Errors in DRAMs

Shigeo Satoh, Yoshiharu Tosaka, Toru Itakura (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF Download